公开(公告)号：US09972274B2

公开(公告)日：2018-05-15

申请号：US15032192

申请日：2014-10-23

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

IPC分类号： H01L27/12 ,  G09G3/36 ,  H01L29/786 ,  H01L27/32

CPC分类号： G09G3/3696 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0278 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/7869

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

公开(公告)号：US09527285B2

公开(公告)日：2016-12-27

申请号：US15081307

申请日：2016-03-25

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： B41J2/14

CPC分类号： B41J2/1433 ,  B41J2/06 ,  B41J2002/14491

摘要： A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

摘要翻译： 一种用于液滴喷射头喷射带电液滴的喷嘴板，包括设置在喷嘴面上的排出口; 填充有从排出口排出的液体的排出室; 喷嘴孔，其从所述排出口沿所述喷嘴板的厚度方向延伸并与所述排出室连通; 设置在所述排出室或所述喷嘴孔中的第一电极并接触所述液滴的一部分; 以及设置在喷嘴面上并且既不连接到第一电极也不与液滴接触的第二电极。

公开(公告)号：US20160013215A1

公开(公告)日：2016-01-14

申请号：US14795234

申请日：2015-07-09

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  G09G3/22 ,  C09D5/24 ,  H01L29/786 ,  H01L29/24

CPC分类号： H01L27/1225 ,  C09D5/24 ,  G09G3/22 ,  G09G2300/0421 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A field-effect transistor, including: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode configured to take out electric current; an active layer formed of a n-type oxide semiconductor, and provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor includes at least one selected from the group consisting of Re, Ru, and Os as a dopant.

摘要翻译： 一种场效应晶体管，包括：施加栅极电压的栅电极; 源电极和漏电极，被配置为取出电流; 由n型氧化物半导体形成的有源层，与源电极和漏电极接触; 以及栅极绝缘层，设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体包括选自由Re，Ru和Os组成的组中的至少一种作为掺杂剂。

公开(公告)号：US10790308B2

公开(公告)日：2020-09-29

申请号：US16131593

申请日：2018-09-14

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/786 ,  H05B33/14 ,  H05B33/02 ,  G09F9/30 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/15

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.

公开(公告)号：US10600916B2

公开(公告)日：2020-03-24

申请号：US15370392

申请日：2016-12-06

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3225 ,  G09G3/00 ,  H01L29/49 ,  H01L27/32

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

公开(公告)号：US10312373B2

公开(公告)日：2019-06-04

申请号：US15349211

申请日：2016-11-11

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： G09G3/36 ,  G09G3/34 ,  H01L29/786 ,  H01L21/8234 ,  H01L27/12 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/02 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

摘要： A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.

公开(公告)号：US20190157313A1

公开(公告)日：2019-05-23

申请号：US16255035

申请日：2019-01-23

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/786

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20170186626A1

公开(公告)日：2017-06-29

申请号：US15376895

申请日：2016-12-13

申请人： Minehide KUSAYANAGI ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko ABE ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide KUSAYANAGI ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko ABE ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L21/477 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/44 ,  H01L21/477 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US20170162601A1

公开(公告)日：2017-06-08

申请号：US15369678

申请日：2016-12-05

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/49 ,  G09G3/20 ,  H01L29/786

CPC分类号： H01L27/1218 ,  H01L29/78603

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20170116916A1

公开(公告)日：2017-04-27

申请号：US15289243

申请日：2016-10-10

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/3225 ,  G09G3/34 ,  H01L27/12

CPC分类号： G09G3/3225 ,  G09G3/3406 ,  G09G3/344 ,  G09G3/348 ,  G09G3/3648 ,  G09G2300/0417 ,  G09G2310/0264 ,  H01L21/823462 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/7869

摘要： A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.