公开(公告)号：US20150287426A1

公开(公告)日：2015-10-08

申请号：US14246985

申请日：2014-04-07

Applicant: HGST NETHERLANDS B.V.

Inventor： Goran MIHAJLOVIC ,  Petrus VAN DER HEIJDEN

IPC: G11B5/37 ,  G11B5/31

CPC classification number: G11B5/374 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/3932 ,  G11B2005/3996

Abstract: The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a spin Hall effect layer disposed on the free magnetic layer. Electrical bias is applied to the top shield, or lead layer, longitudinally so that the current is longitudinally driven through the spin Hall effect layer. The spin Hall effect layer may comprise Pt, Ta, W, copper doped with either bismuth or iridium, a noble metal having group 5d non-magnetic impurities, or combinations thereof. The spin Hall effect layer, together with the longitudinally applied bias, reduces the damping in the free magnetic layer and hence, reduces the thermal magnetic noise of the read head.

Abstract translation: 所公开的实施例一般涉及磁记录头中的读头。 读头利用设置在自由磁性层上的旋转霍尔效应层。 电偏置被纵向施加到顶部屏蔽或引线层，使得电流纵向驱动通过旋转霍尔效应层。 旋转霍尔效应层可以包括Pt，Ta，W，掺杂有铋或铱的铜，具有组5d非磁性杂质的贵金属或其组合。 旋转霍尔效应层与纵向施加的偏压一起减小了自由磁性层中的阻尼，从而降低了读取磁头的热磁噪声。

公开(公告)号：US09064509B2

公开(公告)日：2015-06-23

申请号：US14022282

申请日：2013-09-10

Applicant: Seagate Technology LLC

Inventor： Dimitar Velikov Dimitrov ,  Dian Song ,  Mark Thomas Kief ,  Amit Sharma

IPC: G11B5/39 ,  G11B5/31

CPC classification number: G11B5/3909 ,  G11B5/374 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

Abstract: A data reader may be configured at least with detector and injector stacks that each has a common spin accumulation layer. The detector stack may positioned on an air bearing surface (ABS) while the injector stack is positioned distal the ABS. The injector stack can have a diffusive layer with a larger spin diffusion length than mean free path.

Abstract translation: 数据读取器可以至少配置有每个具有公共自旋累积层的检测器和注射器堆叠。 检测器堆可以位于空气轴承表面（ABS）上，同时喷射器堆叠位于ABS的远侧。 注射器堆叠可以具有比平均自由程更大的自旋扩散长度的扩散层。

公开(公告)号：US20120162810A1

公开(公告)日：2012-06-28

申请号：US12976975

申请日：2010-12-22

Applicant: Sarbanoo Das ,  Masafumi Mochizuki

Inventor： Sarbanoo Das ,  Masafumi Mochizuki

IPC: G11B5/37 ,  G11B21/02

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/374 ,  G11B2005/3996

Abstract: In one embodiment a magnetic head includes a sensor thin film adapted for producing a planar Hall voltage, the sensor thin film having a thickness along a down-track direction that is greater than a thickness along a cross-track direction. The down-track direction is in a direction of travel of a magnetic medium relative to the sensor thin film, and the cross-track direction is perpendicular to the down-track direction. In another embodiment, at least one magnetic head as described above is included in a magnetic data storage system, which includes a magnetic medium, a drive mechanism for passing the magnetic medium over the at least one magnetic head, and a controller electrically coupled to the at least one magnetic head for controlling operation of the at least one magnetic head. Other heads and systems are described according to various other embodiments.

Abstract translation: 在一个实施例中，磁头包括适于产生平面霍尔电压的传感器薄膜，所述传感器薄膜沿着沿着下游方向的厚度大于沿着横向方向的厚度。 下轨道方向是在磁介质相对于传感器薄膜的行进方向上，并且横向方向垂直于下轨道方向。 在另一个实施例中，如上所述的至少一个磁头包括在磁数据存储系统中，磁数据存储系统包括磁介质，用于使磁介质通过至少一个磁头的驱动机构，以及电耦合到 至少一个用于控制所述至少一个磁头的操作的磁头。 根据各种其他实施例描述其他头和系统。

公开(公告)号：US08159791B2

公开(公告)日：2012-04-17

申请号：US12027213

申请日：2008-02-06

Applicant: Bruce Alvin Gurney ,  Ernesto E. Marinero

Inventor： Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC: G11B5/39

CPC classification number: G11B5/374

Abstract: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

Abstract translation: 洛伦兹磁阻传感器，其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面，因此更接近于磁场源，大大提高了传感器的性能。 一种洛伦兹磁阻传感器，其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中，所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。

公开(公告)号：US20090176129A1

公开(公告)日：2009-07-09

申请号：US12317534

申请日：2008-12-24

Applicant: Das Sarbanoo ,  Hiroyuki Suzuki ,  Takayoshi Ohtsu

Inventor： Das Sarbanoo ,  Hiroyuki Suzuki ,  Takayoshi Ohtsu

IPC: G11B5/39

CPC classification number: G11B5/374 ,  G01R33/07 ,  G11C11/18 ,  H01F10/137 ,  H01L43/06 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1171

Abstract: Embodiments of the present invention relate to a galvanomagnetic device for use as a magnetic sensor or magnetic memory device. In a particular embodiment, the galvanomagnetic device comprises a non-conductive substrate, a first magnetic layer having a magnetic anisotropy perpendicular to the surface thereof, and a ferromagnetic second magnetic layer formed on the first magnetic layer. On the second magnetic layer, current electrodes are disposed to pass a current between two points, and voltage electrodes are disposed to detect a Hall voltage between two points perpendicularly to the current flow direction.

Abstract translation: 本发明的实施例涉及一种用作磁传感器或磁存储器件的电流磁装置。 在特定实施例中，电流磁性器件包括非导电衬底，具有垂直于其表面的磁各向异性的第一磁性层和形成在第一磁性层上的铁磁性第二磁性层。 在第二磁性层上设置电流电极以在两点之间通过电流，并且设置电压电极以检测垂直于当前流动方向的两个点之间的霍尔电压。

公开(公告)号：US4420781A

公开(公告)日：1983-12-13

申请号：US276458

申请日：1981-06-23

Applicant: Yoshifumi Sakurai

Inventor： Yoshifumi Sakurai

IPC: G01R33/07 ,  G11B5/37 ,  G11B5/38 ,  G11B5/22

CPC classification number: G11B5/372 ,  G11B5/374

Abstract: Disclosed is a magnetic head comprising a support member having a plane faced by a magnetic recording medium; an electromagnetic converter mounted on the support member, and provided with an amorphous magnetic film which is possessed of an axis of easy magnetization extending in a prescribed direction along the plane of the film.The amorphous magnetic film occupies such a position on the support member that a magnetic flux sent forth from the recording medium passes through the amorphous magnetic film in the prescribed direction.

Abstract translation: 公开了一种磁头，其包括具有由磁记录介质面对的平面的支撑构件; 安装在所述支撑构件上的电磁转换器，并且设置有非晶磁性膜，所述非晶磁性膜具有容易磁化的轴沿着所述膜的平面沿规定的方向延伸。 非晶磁性膜在支撑构件上占据了从记录介质发出的磁通量沿预定方向通过非晶磁性膜的位置。

公开(公告)号：US20240135961A1

公开(公告)日：2024-04-25

申请号：US18359982

申请日：2023-07-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tazumi NAGASAWA ,  Satoshi SHIROTORI ,  Akira KIKITSU ,  Yoshihiro HIGASHI

IPC: G11B5/11 ,  G11B5/127 ,  G11B5/37 ,  G11B5/39

CPC classification number: G11B5/11 ,  G11B5/1272 ,  G11B5/374 ,  G11B5/3912

Abstract: According to one embodiment, a magnetic sensor includes first to sixth shields, first and second magnetic layers, a first member, and first to fourth terminals. The first magnetic layer is provided between the first shield and the second shield. The first magnetic layer is between the third shield and the fourth shield in the second direction. The second magnetic layer is provided between the first magnetic layer and the second shield. The second magnetic layer is between the fifth shield and the sixth shield in the second direction. The second magnetic layer is electrically connected to the fifth shield and the sixth shield. The first member includes a first region and a second region. The first region is provided between the third shield and the first magnetic layer. The second region is provided between the first magnetic layer and the fourth shield.

公开(公告)号：US09099119B2

公开(公告)日：2015-08-04

申请号：US13764600

申请日：2013-02-11

Applicant: HGST Netherlands B.V.

Inventor： Goran Mihajlovic ,  Petrus A. Van Der Heijden

IPC: G11B5/127 ,  G11B5/37 ,  H01L43/06 ,  G01R33/07 ,  G01R33/12

CPC classification number: G11B5/374 ,  G01R33/07 ,  G01R33/1284 ,  G11B5/3912 ,  H01L43/06

Abstract: A magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby reducing gap thickness for increased data density. The sensor includes a non-magnetic, electrically conductive layer that is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows there-through. A magnetic free layer is located adjacent to the side of the non-magnetic, electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.

Abstract translation: 利用旋转霍尔效应的磁传感器极化用于测量磁场的电子。 该传感器不需要钉扎层结构或反铁磁层（AFM层），从而减小间隙厚度以增加数据密度。 该传感器包括非磁性导电层，其被配置为当电流流过其时在其一侧积聚主要为一个自旋的电子。 无磁性层位于非磁性导电层的侧面附近。 相对于自旋极化电子的取向，自由层的磁化方向的变化导致传感器的电压输出的变化。

公开(公告)号：US20140226239A1

公开(公告)日：2014-08-14

申请号：US13764600

申请日：2013-02-11

Applicant: HGST NETHERLANDS B.V.

Inventor： Goran Mihajlovic ,  Petrus A. Van Der Heijden

IPC: G11B5/37

CPC classification number: G11B5/374 ,  G01R33/07 ,  G01R33/1284 ,  G11B5/3912 ,  H01L43/06

Abstract: A magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby reducing gap thickness for increased data density. The sensor includes a non-magnetic, electrically conductive layer that is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows there-through. A magnetic free layer is located adjacent to the side of the non-magnetic, electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.

Abstract translation: 利用旋转霍尔效应的磁传感器极化用于测量磁场的电子。 该传感器不需要钉扎层结构或反铁磁层（AFM层），从而减小间隙厚度以增加数据密度。 该传感器包括非磁性导电层，其被配置为当电流流过其时在其一侧积聚主要为一个自旋的电子。 无磁性层位于非磁性导电层的侧面附近。 相对于自旋极化电子的取向，自由层的磁化方向的变化导致传感器的电压输出的变化。

公开(公告)号：US08390954B2

公开(公告)日：2013-03-05

申请号：US12556492

申请日：2009-09-09

Applicant: Sarbanoo Das ,  Masae Suzuki

Inventor： Sarbanoo Das ,  Hiroyuki Suzuki

IPC: G11B5/37

CPC classification number: G11B5/374 ,  G11B5/1278 ,  G11C11/18

Abstract: According to one embodiment, magnetic reproducing element for detecting a magnetic field from a magnetic recording medium comprises a sensor film including a perpendicular magnetization film having a magnetization easy axis in a direction perpendicular to a film plane, wherein magnetization in the sensor film tilts upward or downward in an element height direction from the magnetization easy axis while no magnetic field is applied from the magnetic recording medium, and change in anomalous Hall voltage generated in the sensor film is detected, thereby allowing the magnetic field applied from the magnetic recording medium to be detected. Other magnetic reproducing elements and magnetic heads employing magnetic reproducing elements are described as well.

Abstract translation: 根据一个实施例，用于检测来自磁记录介质的磁场的磁再现元件包括传感器膜，其包括在垂直于膜平面的方向上具有易磁化轴的垂直磁化膜，其中传感器膜中的磁化向上倾斜或 在磁化容易轴的元件高度方向上向下，同时没有从磁记录介质施加磁场，并且检测到传感器膜中产生的异常霍尔电压的变化，从而允许从磁记录介质施加的磁场为 检测到。 还描述了采用磁再现元件的其它磁再现元件和磁头。