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21.发明申请公开(公告)号：US20110074744A1
公开(公告)日：2011-03-31
申请号：US12890395
申请日：2010-09-24
CPC分类号： H01J9/025 , H01J1/304 , H01J1/3046 , H01J3/021 , H01J31/127 , H01J2201/30423 , H01J2203/0204 , H01J2329/0423
摘要： Provided is an electron-emitting device including an insulating member and a gate stacked on a substrate. A cathode is disposed on a side surface of the insulating member. The cathode has a plurality of protrusions provided along a corner of the insulating member. The gate has a plurality of protrusions extending toward the cathode.
摘要翻译： 提供一种电子发射器件，其包括堆叠在衬底上的绝缘构件和栅极。 阴极设置在绝缘构件的侧面上。 阴极具有沿着绝缘构件的角部设置的多个突起。 门具有朝向阴极延伸的多个突起。
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公开(公告)号：US07786658B1
公开(公告)日：2010-08-31
申请号：US12421773
申请日：2009-04-10
IPC分类号： H01J1/02
CPC分类号： H01J1/3046 , H01J3/022 , H01J31/127 , H01J2329/0423
摘要： An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.
摘要翻译： 电子发射器件具有绝缘层，具有侧表面，形成在绝缘层的侧表面上的凹陷部分，设置在凹部上方的栅电极和布置在边缘上的楔形发射体 并且在所述凹部的一侧具有第一斜面，在与所述凹部相反的一侧具有第二斜面。 发射体的第一斜面的下端进入凹部，发光体的第一斜面和第二斜面都向凹部的外侧倾斜。
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公开(公告)号：US20100201246A1
公开(公告)日：2010-08-12
申请号：US12421773
申请日：2009-04-10
IPC分类号： H01J1/02
CPC分类号： H01J1/3046 , H01J3/022 , H01J31/127 , H01J2329/0423
摘要： An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.
摘要翻译： 电子发射器件具有绝缘层，具有侧表面，形成在绝缘层的侧表面上的凹陷部分，设置在凹部上方的栅电极和布置在边缘上的楔形发射体 并且在所述凹部的一侧具有第一斜面，在与所述凹部相反的一侧具有第二斜面。 发射体的第一斜面的下端进入凹部，发光体的第一斜面和第二斜面都向凹部的外侧倾斜。
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公开(公告)号：US20090026944A1
公开(公告)日：2009-01-29
申请号：US11782070
申请日：2007-07-24
CPC分类号： H01J3/022 , H01J1/3044 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2201/3195 , H01J2329/0423 , H01J2329/0497
摘要： A method for making a field emission cathode structure includes forming a ballast layer over a column metal layer, forming a dielectric layer over the ballast layer, forming a line metal layer over the dielectric layer, forming a trench in the line metal layer and the dielectric layer, the trench extending to the ballast layer, and forming a sidewall spacer and a sidewall blade adjacent a sidewall of the trench, where the sidewall spacer is between the dielectric layer and the sidewall blade, and where the conformal spacer is recessed as compared to the sidewall blade such that a gap is present between the sidewall blade and the line metal layer.
摘要翻译： 一种制造场致发射阴极结构的方法包括在柱金属层上形成压载层，在镇流器层上形成电介质层，在电介质层上形成线金属层，在线金属层和电介质中形成沟槽 层，沟槽延伸到镇流器层，以及邻近沟槽的侧壁形成侧壁间隔件和侧壁叶片，其中侧壁间隔物位于介电层和侧壁叶片之间，并且其中保形间隔件相对于凹槽 侧壁叶片使得在侧壁叶片和线金属层之间存在间隙。
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