公开(公告)号：US20180012723A1

公开(公告)日：2018-01-11

申请号：US15638237

申请日：2017-06-29

Applicant: THALES

Inventor： Jean-Paul MAZELLIER ,  Lucie SABAUT

IPC: H01J35/06

CPC classification number: H01J35/065 ,  H01J1/15 ,  H01J1/312 ,  H01J21/105 ,  H01J23/04 ,  H01J2201/30423 ,  H01J2201/30434 ,  H01J2235/068

Abstract: A vacuum electron tube comprises at least one electron-emitting cathode and at least one anode arranged in a vacuum chamber, the cathode having a planar structure comprising a substrate comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of the nanotube or nanowire elements substantially parallel to the plane of the substrate, and at least one first connector electrically linked to at least one nanotube or nanowire element so as to be able to apply a first electrical potential to the nanowire or nanotube element.

公开(公告)号：US09331189B2

公开(公告)日：2016-05-03

申请号：US13888493

申请日：2013-05-07

Applicant: UNIVERSITY OF PITTSBURGH—OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

Inventor： Hong Koo Kim ,  Siwapon Srisonphan

IPC: H01L29/92 ,  H01L29/76 ,  H01L29/66 ,  H01L29/94 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/113 ,  H01L27/144 ,  H01J3/02 ,  H01J1/304

CPC classification number: H01J1/3046 ,  H01J1/3042 ,  H01J3/022 ,  H01J19/24 ,  H01J2201/30423 ,  H01L27/1446 ,  H01L27/146 ,  H01L29/66181 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/94 ,  H01L31/022466 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/101 ,  H01L31/113 ,  Y02E10/50

Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

Abstract translation: 一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。 至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。 在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子 由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

公开(公告)号：US20150364287A1

公开(公告)日：2015-12-17

申请号：US14738949

申请日：2015-06-15

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： YANG WEI ,  SHOU-SHAN FAN

IPC: H01J9/02

CPC classification number: H01J9/025 ,  B82Y40/00 ,  B82Y99/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/939

Abstract: A method of making a field emitter includes following steps. A carbon nanotube layer is provided, and the carbon nanotube layer includes a first surface and a second surface opposite to each other. A carbon nanotube composite layer is formed via electroplating a first metal layer on the first surface and electroplating a second metal layer on the second surface. A first carbon nanotube layer and a second carbon nanotube layer is formed by separating apart the carbon nanotube composite layer, wherein a fracture surface is formed in the carbon nanotube composite layer, a number of first carbon nanotubes in the first carbon nanotube layer are exposed from the fracture surface, and a number of second carbon nanotubes in the second carbon nanotube layer are exposed from the fracture surface.

Abstract translation: 制造场发射体的方法包括以下步骤。 提供碳纳米管层，碳纳米管层包括彼此相对的第一表面和第二表面。 通过在第一表面上电镀第一金属层并在第二表面上电镀第二金属层来形成碳纳米管复合层。 第一碳纳米管层和第二碳纳米管层通过分离碳纳米管复合层形成，其中在碳纳米管复合层中形成断裂面，第一碳纳米管层中的多个第一碳纳米管暴露于 断裂面和第二碳纳米管层中的多个第二碳纳米管从断裂面露出。

公开(公告)号：US20150060757A1

公开(公告)日：2015-03-05

申请号：US14471713

申请日：2014-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-gu LEE ,  Shang-hyeun PARK ,  Yong-chul KIM ,  Chang-soo LEE ,  Do-yoon KIM

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J35/065 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.

Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或包括覆盖该开口的石墨烯片的栅电极。 制造栅电极的方法可以包括：在导电膜的一个表面上形成石墨烯薄膜; 在所述导电膜的另一表面上形成具有蚀刻开口的掩模层，其中所述蚀刻开口暴露所述导电膜的一部分; 通过蚀刻开口部分去除导电膜以部分地暴露石墨烯薄膜; 和/或去除掩模层。

公开(公告)号：US08177987B2

公开(公告)日：2012-05-15

申请号：US12637978

申请日：2009-12-15

Applicant: Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

Inventor： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

IPC: H01B13/00

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

Abstract translation: 一种电子发射器件的制造方法，包括在包括侧面的绝缘层和与侧面连接的顶面的侧面上形成第一导电膜; 从所述顶表面到所述侧表面和所述第一导电膜上形成第二导电膜; 并蚀刻第二导电膜。

公开(公告)号：US20110254430A1

公开(公告)日：2011-10-20

申请号：US13082924

申请日：2011-04-08

Applicant: Tamayo Hiroki

Inventor： Tamayo Hiroki

IPC: H01J1/02 ,  H01J9/02

CPC classification number: H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: A production method of an electron emitting device is provided, which reduces occurrence of a leak current between a gate and a cathode to which a voltage for driving an electron source is applied. The electron emitting device includes an insulating member having a concave portion on a surface thereof, a gate electrode formed on the insulating member and located opposing the concave portion, a cathode formed on an edge of the concave portion and having a protrusion protruding to the gate electrode. The production method includes steps of forming the concave portion and of forming the cathode after forming the convex portion protruding to the gate electrode at the edge of the concave portion. These steps are performed in this order.

Abstract translation: 提供一种电子发射器件的制造方法，其减少施加用于驱动电子源的电压的栅极与阴极之间的漏电流的发生。 该电子发射器件包括在其表面上具有凹入部分的绝缘构件，形成在绝缘构件上并位于凹部相对的栅电极，阴极，形成在凹部的边缘上并且具有突出到栅极的突起 电极。 该制造方法包括在形成在凹部的边缘处形成突出到栅电极的凸部之后形成凹部并形成阴极的步骤。 这些步骤按此顺序执行。

公开(公告)号：US20110084596A1

公开(公告)日：2011-04-14

申请号：US12898171

申请日：2010-10-05

Applicant: Yohei Hashizume

Inventor： Yohei Hashizume

IPC: H01J1/62 ,  H01J1/00

CPC classification number: H01J1/3046 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: A device includes a substrate, an insulating member disposed on a surface of the substrate, a gate, and a cathode. The insulating member has an upper surface apart from the surface of the substrate, and a side surface rising from the surface of the substrate between the upper surface and the surface of the substrate. The gate is disposed on the upper surface of the insulating member. The cathode is disposed on the side surface of the insulating member and has a portion opposing the gate. The side surface of the insulating member on which the cathode is disposed has a protruding portion protruding from an imaginary line connecting a position where the portion opposing the gate lies and a position where the insulating member rises from the surface of the substrate.

Abstract translation: 一种器件包括衬底，设置在衬底的表面上的绝缘构件，栅极和阴极。 所述绝缘构件具有与所述基板的表面分离的上表面，以及在所述基板的上表面和所述表面之间从所述基板的表面起升的侧面。 栅极设置在绝缘构件的上表面上。 阴极设置在绝缘构件的侧表面上并且具有与栅极相对的部分。 绝缘构件的设置有阴极的侧面具有突出部，该突出部从连接着与栅极相对的部分的位置的虚拟线和从基板的表面上升的位置突出。

公开(公告)号：US20100159790A1

公开(公告)日：2010-06-24

申请号：US12421758

申请日：2009-04-10

Applicant: Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

Inventor： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

IPC: H01J9/04

CPC classification number: H01J31/127 ,  H01J1/3046 ,  H01J29/04 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer.

Abstract translation: 制造电子发射器件的方法包括：第一步骤，在具有上表面和侧表面的绝缘层上形成导电膜，所述绝缘层经由拐角部分从所述侧表面延伸到所述上表面 表面并覆盖角部的至少一部分，以及蚀刻导电膜的第二步骤。 在第一步骤中，形成导电膜，使得绝缘层的侧表面上的部分的膜密度变得低于绝缘层的角部上的部分的膜密度。

公开(公告)号：US20060178076A1

公开(公告)日：2006-08-10

申请号：US11384313

申请日：2006-03-21

Applicant: Masayuki Nakamoto ,  Atsuo Inoue

Inventor： Masayuki Nakamoto ,  Atsuo Inoue

IPC: H01J9/24 ,  H01J9/04

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30423

Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

公开(公告)号：US20040150322A1

公开(公告)日：2004-08-05

申请号：US10763552

申请日：2004-01-23

Applicant: Cabot Microelectronics Corporation

Inventor： Heinz H. Busta

IPC: H01J009/00 ,  H01J009/24 ,  H01J001/62

CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从杆的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和杆之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。