公开(公告)号：US20100320898A1

公开(公告)日：2010-12-23

申请号：US12783667

申请日：2010-05-20

申请人： Kazuya Tsujino

发明人： Kazuya Tsujino

IPC分类号： H01J1/62

CPC分类号： H01J31/127 ,  H01J1/3046 ,  H01J1/316 ,  H01J29/04 ,  H01J2329/0423 ,  H01J2329/0486

摘要： An image display apparatus includes: an electron-emitting electrode having a gate electrode a cathode electrode including a plurality of strip portions opposing to the gate electrode through a gap, wherein each gap functions as an electron emitting portion when a potential difference between a gate potential and a cathode potential is applied to the each gap; and a light-emitting member emitting light responsive to an irradiation with electrons emitted from an electron emitting portion. The plurality of the strip portions of the cathode electrode are arranged in a line along a predetermined direction. Intervals each between mutually adjacent strip portions of the cathode electrode are arranged such that the interval in a central region of the electron emitting portions is larger than that in a peripheral region thereof.

摘要翻译： 图像显示装置包括：电子发射电极，其具有栅电极，阴极包括通过间隙与栅电极相对的多个条状部分，其中当栅极电位之间的电位差 并且对每个间隙施加阴极电位; 以及响应于从电子发射部分发射的电子的照射而发射光的发光部件。 阴极电极的多个带状部分沿预定方向排列成一行。 每个在阴极电极的彼此相邻的带状部分之间的间隔被布置成使得电子发射部分的中心区域中的间隔大于其周边区域中的间隔。

公开(公告)号：US20100136869A1

公开(公告)日：2010-06-03

申请号：US12627982

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

摘要翻译： 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US08388400B2

公开(公告)日：2013-03-05

申请号：US12627982

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： H01J1/304 ,  H01J1/30

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

摘要翻译： 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US07850502B2

公开(公告)日：2010-12-14

申请号：US12421780

申请日：2009-04-10

申请人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

发明人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

IPC分类号： H01J9/00

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

摘要翻译： 一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。 在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

公开(公告)号：US20100159784A1

公开(公告)日：2010-06-24

申请号：US12638270

申请日：2009-12-15

申请人： Hiroshi Tomii ,  Akira Shimazu ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Shin Kitamura ,  Takahiro Sato

发明人： Hiroshi Tomii ,  Akira Shimazu ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Shin Kitamura ,  Takahiro Sato

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method for producing an electron-emitting device includes forming an electrode above a top surface of an insulation layer including the top surface and a side surface connected to the top surface; forming a first conductive film on the insulation layer so as to be separated from the electrode and extend from the top surface to the side surface; forming a second conductive film on the first conductive film so as to extend from the top surface to the side surface; and etching the second conductive film.

摘要翻译： 一种电子发射器件的制造方法，包括在包括上表面的绝缘层的上表面和与顶面连接的侧面上形成电极; 在所述绝缘层上形成第一导电膜，以从所述电极分离并从所述顶表面延伸到所述侧表面; 在所述第一导电膜上形成第二导电膜，以从所述顶表面延伸到所述侧表面; 并蚀刻第二导电膜。

公开(公告)号：US20100060141A1

公开(公告)日：2010-03-11

申请号：US12553727

申请日：2009-09-03

申请人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

发明人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

IPC分类号： H01J1/62 ,  H01J1/02

CPC分类号： H01J1/316 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3165 ,  H01J2329/0423 ,  H01J2329/0489

摘要： In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.

摘要翻译： 在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地 获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。 电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。 布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。

公开(公告)号：US20110084590A1

公开(公告)日：2011-04-14

申请号：US12897338

申请日：2010-10-04

申请人： Hideyasu Tashiro ,  Yohei Hashizume ,  Taro Hiroike ,  Fumikazu Kobayashi

发明人： Hideyasu Tashiro ,  Yohei Hashizume ,  Taro Hiroike ,  Fumikazu Kobayashi

IPC分类号： H01J1/02

CPC分类号： H01J1/3046 ,  H01J3/021 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/02 ,  H01J2329/0423

摘要： An electron-emitting device according to the present invention, comprises: an insulating member having a top face, a side face and a recess portion formed between the top face and the side face; a cathode electrode which is disposed on the side face and has an electron emitting portion located in a boundary portion between the side face and the recess portion; and a gate electrode which is disposed on the top face and of which an edge faces the electron emitting portion, wherein the boundary portion in which the electron emitting portion is located has concavity and convexity in a direction parallel to the top face.

摘要翻译： 根据本发明的电子发射器件包括：绝缘构件，其具有形成在顶面和侧面之间的顶面，侧面和凹部; 阴极，其设置在所述侧面上，并且具有位于所述侧面和所述凹部之间的边界部分中的电子发射部分; 以及栅电极，其设置在所述顶面上并且其边缘面向所述电子发射部分，其中所述电子发射部分所在的所述边界部分在与所述顶面平行的方向上具有凹凸。

公开(公告)号：US20100201247A1

公开(公告)日：2010-08-12

申请号：US12694474

申请日：2010-01-27

申请人： Takanori Suwa ,  Toshihiko Takeda ,  Tamayo Hiroki

发明人： Takanori Suwa ,  Toshihiko Takeda ,  Tamayo Hiroki

IPC分类号： H01J29/46

CPC分类号： H01J3/021 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/0216 ,  H01J2203/0272 ,  H01J2329/0423 ,  H01J2329/4613 ,  H01J2329/4673 ,  H01J2329/4682

摘要： An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.

摘要翻译： 提供了一种具有电子发射器件的电子束装置，该电子发射器件具有简单的结构，表现出高的电子发射效率，稳定地工作，并且其中发射的电子被有效地收敛。 电子束装置包括：在其表面上具有凹口的绝缘体; 位于绝缘体表面上的门; 至少一个阴极，具有从所述凹口的边缘向所述栅极突出的突出部分，并且位于所述绝缘体的所述表面上，使得所述突出部分与所述栅极相对; 以及经由所述栅极与所述突出部相对的阳极，其中，所述栅极形成在所述绝缘体的表面上，使得与所述阴极相对的区域的至少一部分向外突出，并且设置有凹部 的栅极凹进并插入投影区域。

公开(公告)号：US20100159783A1

公开(公告)日：2010-06-24

申请号：US12637978

申请日：2009-12-15

申请人： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

发明人： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

摘要翻译： 一种电子发射器件的制造方法，包括在包括侧面的绝缘层和与侧面连接的顶面的侧面上形成第一导电膜; 从所述顶表面到所述侧表面和所述第一导电膜上形成第二导电膜; 并蚀刻第二导电膜。

公开(公告)号：US20100159781A1

公开(公告)日：2010-06-24

申请号：US12421780

申请日：2009-04-10

申请人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

发明人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

摘要翻译： 一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。 在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。