Abstract:
A microwave solid state oscillator of a compact size for generating an oscillation of a highly stabilized frequency, comprising a cavity resonator having a coupling window for coupling with an external circuit, a solid state oscillation device and a dielectric resonator of a large dielectric constant and a high Q factor, characterized in that the solid state oscillation device is installed in a recess which is formed on an inner side wall of the cavity resonator and having an opening sufficiently small compared with an internal size of the cavity resonator, and the dielectric resonator is disposed in the cavity resonator in a manner to face to and to be adjacent to the opening of the recess.
Abstract:
A microwave oscillator comprises a wave-guide having a closed end with a semiconductor diode having a negative differential resistance for the frequency used placed in the wave-guide spaced from the closed end and electrically connected to two elements protruding inwardly from opposite walls of the wave-guide, with one of the elements being electrically isolated from the wall and having an unsymmetrical, rotatable body. The wave-guide may be conical if desired.
Abstract:
A microwave oscillator using a Gunn diode in a section of rectangular waveguide tuned to resonate as a cavity to a fundamental frequency that is below the waveguide cutoff frequency has its output for the fundamental frequency located at a place in the cavity at which a peak of the fundamental frequency wave and a null of the second harmonic coincide. Fundamental frequency output is taken in a direction transverse to the axis of the waveguide. Harmonic frequency energy can also be taken from the waveguide section, or suppressed, as desired.
Abstract:
Disclosed is an improved and highly efficient coaxial TRAPATT oscillator and method for rapidly tuning same. The oscillator includes a TRAPATT diode connected directly between an outer coaxial conductor and a cylindrical quarter wave impedance transformer, and the transformer is in turn coaxially mounted directly between the TRAPATT diode and an inner coxial conductor of the oscillator. An end wall of the cylindrical impedance transformer is closely adjacent to the TRAPATT diode and it forms with the outer conductor a relatively large capacitance necessary for handling the TRAPATT diode displacement currents. Additionally, the geometry of the impedance transformer may be varied to control both this capacitance as well as the transformer impedance, ZT, and the latter in turn determines the optimum delay angle for the oscillator. The impedance transformer provides, among other things, the three functions of: (1) impedance matching the TRAPATT diode to the coaxial oscillator circuitry, (2) providing Saalbach; Herman Karl relatively large gap capacitance, Cg, necessary for handling TRAPATT diode displacement currents, and (3) controlling the optimum delay angle, theta d, of the oscillator. The geometry and location of the step transformer with respect to the TRAPATT diode and the above coaxial conductors greatly improve the tunability of the oscillator.
Abstract translation:公开了一种改进和高效的同步TRAPATT振荡器及其快速调谐方法。 振荡器包括直接连接在外部同轴导体和圆柱形四分之一波长阻抗变压器之间的TRAPATT二极管,变压器又直接同轴安装在TRAPATT二极管和振荡器的内部辅助导体之间。 圆柱形阻抗变压器的端壁与TRAPATT二极管紧密相邻,并与外部导体形成处理TRAPATT二极管位移电流所需的相对较大的电容。 此外,可以改变阻抗变换器的几何形状以控制该电容以及变压器阻抗ZT,并且后者又确定振荡器的最佳延迟角。 阻抗变压器除其他外,提供以下三个功能:(1)将TRAPATT二极管与同轴振荡器电路进行阻抗匹配,(2)提供Saalbach; Herman Karl相对较大的间隙电容Cg,用于处理TRAPATT二极管位移电流,(3)控制振荡器的最佳延迟角θd。 阶跃式变压器相对于TRAPATT二极管和上述同轴导体的几何形状和位置大大提高了振荡器的可调性。
Abstract:
A microwave oscillator comprising a semiconductor device employed in a cavity resonator having dielectric walls. The cavity is matched to external loads by utilizing the dielectric walls of the resonator as a quarter-wave impedance transformer.
Abstract:
A microwave oscillator includes a metal housing which defines a cavity in which microwave radiation is produced by an internally mounted Gunn diode or the like. A tuning member projects into the microwave cavity through a hole formed in a wall of the oscillator housing. Depending on the length of its projection into the cavity, the tuning member controls the frequency of the microwave energy produced by the oscillator. The tuning member is supported on the cavity housing by a mounting member made from a material having a relatively high coefficient of thermal expansion. Particularly preferred materials include polymers such as polyethylene and polypropylene. Preferably, a microwave filter or choke is provided to reduce the leakage of microwave energy from the cavity through the hole in the oscillator housing. Such a choke comprises a pair of capacitors separated by an inductor. These elements are defined by (a) a portion of the oscillator housing, (b) the tuning screw (which is given a special cross-sectional contour), and (c) a sleeve of dielectric material, such as Teflon, which surrounds the tuning member.
Abstract:
A microwave oscillator having a dielectric resonator, in particular for use in the 22 GHz range, the oscillator comprising a negative resistance component (18) and a dielectric resonator (19) disposed on the surface of a substrate (13, 14) situated inside a housing (10), and the housing (10) being provided with a clearance situated over the dielectric resonator (19).
Abstract:
A microwave diode tuning circuit including am IMPATT diode holder of coaxial form and an adjustable capacitor connected in a parallel resonant circuit by microstrip transmission line. The tuning circuit includes a stabilization network and a bias insertion network. Optionally, the tuning circuit may include a hybrid junction for coupling two such diode tuning circuits together. the diode holder includes an internally-externally threaded sleeve providing means for continuously adjusting, through a limited range, the inductance of the resonant circuit.
Abstract:
A microwave oscillator having very low phase noise characteristics has a reflection oscillator circuit coupled to a right-circular cylindrical resonant cavity designed to operate in the TE.sub.011 mode. The resonator length L and inner diameter D are restricted to a range of values such that (D/L).sup.2 is less than 2.5 but greater than 1.7. To suppress the TM.sub.111 resonant modes in the resonator, two techniques are employed. A single tuning post is disposed on either resonator end plate at a point where the TM.sub.111 electric field Z-component is a maximum. The post length is adjustably fixed to maximize the output microwave power at the cavity output port. Each end plate also has a continuous gap separating each plate from the housing to suppress electric field currents of the TM.sub.111 mode flowing on the inner surface of the resonator.