Abstract:
An image sensor includes a color filter array, sense amplifiers, multiplexing circuitry, and an output. The color filter array acquires image data using an array of M columns and N rows of pixels. The sense amplifiers are coupled to the color filter array for reading out image data from the color filter array. The multiplexing circuitry couples the sense amplifiers to the color filter array, wherein each sense amplifier is time shared across multiple columns and multiple rows. The output is coupled to receive the image data from the sense amplifiers and output the image data off-chip.
Abstract:
A solid-state imaging device includes a sharing pixel block having k (where k is a natural number other than 1) pixel transistors corresponding to n (where n is a natural number other than 1) pixels and a row-selection circuit configured to select the pixel transistors every row in the sharing pixel block using logic of an address signal and a timing signal. In this solid-state imaging device, in a case of a 1/n row decimation operation in which a signal is read every n rows, the row-selection circuit simultaneously performs shutter operations for n rows corresponding to the k pixel transistors included in the sharing pixel block using an input of a simultaneous-shutter-operation signal.
Abstract:
A CMOS imaging facility is implemented on a substrate through a set of pixel circuits that are array-wise organized in lines and columns and each comprise a radiation-to-charge accumulator (20), a transfer transistor (22) for transferring a representation of the charge, a reset transistor (24) fed by a reference voltage and a source follower transistor (26) for feeding a select transistor (28) that feeds the representation to an output array conductor. In particular, for respective pairs of adjacent column conductors the associated pixel transfer transistors will controllably pair wise share the accumulators in an interlace organization.
Abstract:
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.
Abstract:
A solid-state imaging element includes an imaging element area, a first horizontal transfer register, a second horizontal transfer register, a first transfer channel, a second transfer channel, and a channel stop region.
Abstract:
In an XY address type solid-state imager apparatus comprising a solid-state imager having a plurality of pixels two-dimensionally arranged, and horizontal and vertical scanning circuits to read signals of the pixels, the scanning circuits each have a progressive scanning circuit to progressively read pixel signals by a first scanning control signal, and an interlace scanning circuit to read pixel signals with an interlaced manner by a second scanning control signal different from the first scanning control signal, and arbitrarily carries out combining of progressive reading and interlace reading in one frame in accordance with a combination of the respective scanning control signals, and reads pixel signals.
Abstract:
An image sensor that supplies a control signal together with an address specifying each of a plurality of pixels arrayed in a pixel array with predetermined rows and columns to thereby perform an electronic shutter operation on a pixel corresponding to the address or perform reading of a pixel signal of a pixel corresponding to the address, is disclosed. The sensor includes: address generating means for generating a shutter row address specifying a row of pixels, on which an electronic shutter operation is to be performed within one horizontal period, among the pixels arrayed in the pixel array and a read row address specifying a row of pixels on which reading of a pixel signal is to be performed within the same one horizontal period; first storage means for storing the shutter row address; and second storage means for storing the read row address.
Abstract:
A method for creating an instant review image is disclosed. The method starts by creating image data by exposing an image sensor to a scene. A first sub-set of the image data is transferred from the image sensor and used to create an instant review image. The rest of the data is transferred from the image sensor and essentially all of the data from the image sensor is used to create a second image.
Abstract:
A solid-state imaging device includes: a pixel array unit wherein a unit pixel group with a portion of elements of a unit pixel being shared with a plurality of unit pixels is arrayed in a matrix form, the unit pixel having a detecting unit, a pixel signal generating unit, a transfer unit to transfer the charge, and an initializing unit to initialize the potential of the pixel signal generating unit; and a driving control unit; wherein the driving control unit controls blooming reduction potential which is the transfer control potential supplied to the transfer unit of the unit pixel to be thinned, so that the overflow charge at the detecting unit with the unit pixel to be thinned which has no shared relation with the unit pixel to be read transitions to a state readily transferable to the pixel signal generating unit side of the unit pixel to be thinned.
Abstract:
The present invention is to provide a driving method for a solid-state imaging device which suppresses increase of smear and occurrence of image blur when imaging a moving object.In the driving method, for each row of the color filters arranged in the Bayer pattern, for a pixel, a signal charge is held in a first holding unit, which is generated in a preceding field period temporally preceding a predetermined field out of two different fields temporally equidistant from the predetermined field, a first signal charge is held in a second holding unit, which is generated within the predetermined field, the signal charge held in the first holding unit and a signal charge which is generated in a following field period are added, and a second signal charge obtained by the addition and the first signal charge are respectively outputted to outside of the solid-state imaging device.