公开(公告)号：US11050217B2

公开(公告)日：2021-06-29

申请号：US16546305

申请日：2019-08-21

申请人： FUJIFILM Business Innovation Corp.

发明人： Takashi Kondo ,  Tsutomu Otsuka ,  Takeshi Minamiru ,  Kazuhiro Sakai

IPC分类号： G09G5/02 ,  H01S5/042 ,  H01S5/062 ,  G01S7/481 ,  H04N9/31 ,  H01S5/42 ,  H01S5/30 ,  H01S5/026 ,  G01S17/10

摘要： A light-emitting device includes a light-emitting unit. The light-emitting unit includes an array of multiple light-emitting element groups, each including multiple light-emitting elements. In the light-emitting unit, the multiple light-emitting element groups are sequentially driven along the array such that, for each of the multiple light-emitting element groups, the multiple light-emitting elements included in the light-emitting element group are concurrently set to a state of emitting light or a state of not emitting light.

公开(公告)号：US20210194213A1

公开(公告)日：2021-06-24

申请号：US17130205

申请日：2020-12-22

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Jean-Michel GERARD ,  Yoann CURE ,  Julien CLAUDON

IPC分类号： H01S5/34 ,  H01S5/11 ,  H01S5/30

摘要： The invention relates to a light source 1 comprising a photonic wire 20 having a single-mode core 21 and adapted to support an optical mode which is degenerate in polarization, comprising an emitter 24 of a pair of photons which are intended to be entangled in polarization. The photonic wire 20 comprises a cladding 25 which is asymmetrical in rotation and extends along a principal transverse axis Atg. Furthermore, the light source 1 comprises a correction device 50 adapted to induce by electrostatic effect a mechanical deformation of the photonic wire 20 in a plane parallel to the substrate 10, along a deformation axis Ad forming an angle of inclination of between 0° and 90°, these values being exclusive, with respect to the principal transverse axis Atg, the mechanical deformation leading to mechanical strains experienced by the emitter 24, thus improving the degree of entanglement of the photon pair.

公开(公告)号：US11038319B2

公开(公告)日：2021-06-15

申请号：US16683402

申请日：2019-11-14

申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Quentin Wilmart ,  Karim Hassan

IPC分类号： H01S5/00 ,  H01S5/10 ,  G02F1/225 ,  H01S5/065 ,  H01S3/07 ,  H01S5/14 ,  H01S5/026 ,  H01S5/125 ,  H01S5/02 ,  H01S3/063 ,  G02F1/21 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S5/30

摘要： A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: ∑ n = 1 N 2 ⁢ L 2 , n ⁢ neff 2 , n - ∑ n = 1 N 1 ⁢ L 1 , n ⁢ neff 1 , n = k f ⁢ λ Si where: kf is a preset integer number higher than or equal to 1, N1 and N2 are the numbers of sections in the first and second arms, respectively, L1,n and L2,n are the lengths of the nth sections of the first and second arms, respectively, neff1,n and neff2,n are the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

公开(公告)号：US20210159669A1

公开(公告)日：2021-05-27

申请号：US17090846

申请日：2020-11-05

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Constance J. Chang-Hasnain ,  Jiaxing Wang ,  Jonas H. Kapraun ,  Emil Kolev

IPC分类号： H01S5/183 ,  H01S5/30

摘要： A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue processing at a later time without creating an oxide layer on the final GaAs based layer. In continuing processing, a decomposition process selectively decomposes the phosphor containing material cap layer, after which a regrowing process is performed to grow additional layers of the device structure. The capping, decomposition and regrowth processes can be repeated multiple times on the semiconductor devices on the wafer during device fabrication.

公开(公告)号：US20210119416A1

公开(公告)日：2021-04-22

申请号：US16757308

申请日：2017-10-19

申请人： STMicroelectronics (Crolles 2) SAS ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  Universite Paris-Saclay

发明人： Anas Elbaz ,  Moustafa El Kurdi ,  Abdelhanin Aassime ,  Philippe Boucaud ,  Frederic Boeuf

IPC分类号： H01S5/10 ,  H01S5/02 ,  H01S5/30 ,  H01S5/024

摘要： A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

公开(公告)号：US20210116636A1

公开(公告)日：2021-04-22

申请号：US16914156

申请日：2020-06-26

申请人： Skorpios Technologies, Inc.

发明人： Damien Lambert

IPC分类号： G02B6/12 ,  H01S5/02326 ,  G02B6/122 ,  G02B6/136 ,  H01S5/02 ,  H01S5/026 ,  H01S5/028 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40 ,  H04B10/50 ,  H04J14/02

摘要： A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

公开(公告)号：US10954608B2

公开(公告)日：2021-03-23

申请号：US16185830

申请日：2018-11-09

申请人： Robert T. Bondokov ,  Jianfeng Chen ,  Keisuke Yamaoka ,  Shichao Wang ,  Shailaja P. Rao ,  Takashi Suzuki ,  Leo J. Schowalter

发明人： Robert T. Bondokov ,  Jianfeng Chen ,  Keisuke Yamaoka ,  Shichao Wang ,  Shailaja P. Rao ,  Takashi Suzuki ,  Leo J. Schowalter

IPC分类号： C30B29/40 ,  C30B23/06 ,  H01L33/00 ,  C30B23/00 ,  H01S5/30 ,  H01S5/343 ,  H01S5/02 ,  H01L21/02

摘要： In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

公开(公告)号：US10951007B2

公开(公告)日：2021-03-16

申请号：US16409272

申请日：2019-05-10

申请人： Axsun Technologies, Inc.

发明人： Bartley C. Johnson ,  Walid A. Atia ,  Peter S. Whitney ,  Mark E. Kuznetsov ,  Edward J. Mallon

IPC分类号： H01S5/183 ,  H01S5/04 ,  H01S5/50 ,  H01S5/022 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343

摘要： An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

公开(公告)号：US20210075195A1

公开(公告)日：2021-03-11

申请号：US17090429

申请日：2020-11-05

申请人： NICHIA CORPORATION

发明人： Tomokazu TAJI

IPC分类号： H01S5/40 ,  H01S5/00 ,  H01S5/30 ,  H01S5/022 ,  G01R31/44 ,  G01R31/26

摘要： A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

公开(公告)号：US10938180B2

公开(公告)日：2021-03-02

申请号：US16834037

申请日：2020-03-30

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC分类号： H01S5/22 ,  H01S5/30 ,  H01S5/02 ,  H01S5/022

摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.