公开(公告)号：US20070262373A1

公开(公告)日：2007-11-15

申请号：US11800650

申请日：2007-05-07

Applicant: Weon-ho Park ,  Jeong-uk Han ,  Yong-tae Kim ,  Tea-kwang Yu ,  Kwang-tae Kim ,  Ji-hoon Park

Inventor： Weon-ho Park ,  Jeong-uk Han ,  Yong-tae Kim ,  Tea-kwang Yu ,  Kwang-tae Kim ,  Ji-hoon Park

IPC: H01L29/792

CPC classification number: H01L29/7885 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324

Abstract: A non-volatile memory integrated circuit device and a method of fabricating the same are disclosed. The non-volatile memory integrated circuit device includes a semiconductor substrate, a tunneling dielectric layer, a memory gate and a select gate, a floating junction region, a bit line junction region and a common source region, and a tunneling-prevention dielectric layer pattern. The tunneling dielectric layer is formed on the semiconductor substrate. The memory gate and a select gate are formed on the tunneling dielectric layer to be spaced apart from each other. The floating junction region is formed within the semiconductor substrate between the memory gate and the select gate, the bit line junction region is formed opposite the floating junction region with respect to the memory gate, and a common source region is formed opposite the floating junction region with respect to the select gate. The tunneling-prevention dielectric layer pattern is interposed between the semiconductor substrate and the tunneling dielectric layer, and is configured to overlap part of the memory gate.

Abstract translation: 公开了一种非易失性存储器集成电路器件及其制造方法。 非易失性存储器集成电路器件包括半导体衬底，隧道电介质层，存储栅极和选择栅极，浮置结区域，位线结区域和公共源极区域，以及防止隧道的电介质层图案 。 隧道介电层形成在半导体衬底上。 存储器栅极和选择栅极形成在隧道电介质层上以彼此间隔开。 在存储栅极和选择栅极之间的半导体衬底内形成浮点结区域，与存储栅极相对地形成位线接合区域，并且与浮置结区域相对形成公共源极区域 相对于选择门。 防止隧道的电介质层图案介于半导体衬底和隧穿电介质层之间，并被配置为与存储器栅极的一部分重叠。

公开(公告)号：US20070154789A1

公开(公告)日：2007-07-05

申请号：US11646491

申请日：2006-12-28

Applicant: Seok-Gyun Chang ,  Jung-Seog Kim ,  Yoo-Eup Hyung ,  Yong-Tae Kim ,  Sang-Bong Nam

Inventor： Seok-Gyun Chang ,  Jung-Seog Kim ,  Yoo-Eup Hyung ,  Yong-Tae Kim ,  Sang-Bong Nam

IPC: H01M2/18 ,  H01M2/08 ,  H01M2/12

CPC classification number: H01M10/0587 ,  H01M2/08 ,  H01M2/1229 ,  H01M10/052

Abstract: A lithium ion secondary battery in which an electrode assembly is easily impregnated with an electrolyte is provided. The lithium ion secondary battery includes an electrode assembly wrapped by a sealing tape, an upper insulating plate positioned on the top of the electrode assembly, a lower insulating plate positioned at the bottom of the electrode assembly, a case for accommodating the electrode assembly, and a cap assembly for sealing the case. In one embodiment, the upper insulating plate has holes which may include a form of a mesh. In another embodiment, the lower insulating plate has various shapes of recesses on the surface. The surface of the lower insulating plate may be coated with a material that has an affinity for the electrolyte. An inner surface of the case may have various shapes of recesses or grooves. The sealing tape may be coated with a material that has an affinity for an electrolyte. Therefore, according to the principles of the present invention, the electrode assembly is easily impregnated with the electrolyte, and overall performance of the lithium ion secondary battery is improved.

Abstract translation: 提供了其中电极组件易于浸渍电解质的锂离子二次电池。 锂离子二次电池包括由密封带包裹的电极组件，位于电极组件顶部的上绝缘板，位于电极组件底部的下绝缘板，用于容纳电极组件的壳体，以及 用于密封外壳的盖组件。 在一个实施例中，上绝缘板具有可以包括网格形式的孔。 在另一个实施例中，下绝缘板在表面上具有各种形状的凹部。 下绝缘板的表面可以涂覆有对电解质具有亲和性的材料。 壳体的内表面可以具有各种形状的凹槽或凹槽。 密封带可以涂覆有对电解质具有亲和力的材料。 因此，根据本发明的原理，电极组件易于浸渍电解质，并且提高了锂离子二次电池的整体性能。

公开(公告)号：US07238572B2

公开(公告)日：2007-07-03

申请号：US11096038

申请日：2005-03-31

Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/66825

Abstract: A method of manufacturing an EEPROM cell includes growing a first oxide layer on a semiconductor substrate; forming a first conductive layer on the first oxide layer; forming a first conductive pattern and a tunneling oxide layer by patterning the first conductive layer and the first oxide layer, the tunneling oxide layer being disposed under the first conductive pattern; forming a gate oxide layer on sidewalls of the first conductive pattern and the substrate and forming a second conductive pattern on both sides of the first conductive pattern; forming a conductive layer for a floating gate by electrically connecting the first conductive pattern to the second conductive pattern; forming a coupling oxide layer on the conductive layer for the floating gate; forming a third conductive layer on the coupling oxide layer; and forming a select transistor and a control transistor by patterning the third conductive layer, the coupling oxide layer, and the conductive layer for the floating gate. The select transistor is spaced apart from the control transistor. The select transistor, which is formed on the tunneling oxide layer, includes a gate stack formed of a select gate, a first coupling oxide pattern, and a first floating gate, and the control transistor includes a gate stack formed of a control gate, a second coupling oxide pattern, and a second floating gate.

Abstract translation: 制造EEPROM单元的方法包括在半导体衬底上生长第一氧化物层; 在所述第一氧化物层上形成第一导电层; 通过图案化所述第一导电层和所述第一氧化物层来形成第一导电图案和隧道氧化物层，所述隧穿氧化物层设置在所述第一导电图案下方; 在所述第一导电图案和所述基板的侧壁上形成栅氧化层，并在所述第一导电图案的两侧上形成第二导电图案; 通过将所述第一导电图案电连接到所述第二导电图案来形成用于浮置栅极的导电层; 在浮栅的导电层上形成耦合氧化物层; 在所述耦合氧化物层上形成第三导电层; 以及通过图案化第三导电层，耦合氧化物层和浮栅的导电层来形成选择晶体管和控制晶体管。 选择晶体管与控制晶体管间隔开。 形成在隧道氧化物层上的选择晶体管包括由选择栅极，第一耦合氧化物图案和第一浮置栅极形成的栅极堆叠，并且控制晶体管包括由控制栅极形成的栅极堆叠， 第二耦合氧化物图案和第二浮栅。

公开(公告)号：US07230305B2

公开(公告)日：2007-06-12

申请号：US10875720

申请日：2004-06-25

Applicant: Hong-kook Min ,  Yong-tae Kim

Inventor： Hong-kook Min ,  Yong-tae Kim

IPC: H01L29/76

CPC classification number: H01L27/11521 ,  H01L27/105 ,  H01L27/112 ,  H01L27/1126 ,  H01L27/11293 ,  H01L27/11526

Abstract: A semiconductor memory device included in a system-on-chip (SOC) or a microcomputer chip. The semiconductor memory device may include a flash memory cell array unit and a mask read-only memory (ROM) cell array unit which are formed in a single memory block without an isolation layer for separating the two units. Transistors included in the flash memory unit and the mask ROM unit are the same type and may have two threshold voltages. The transistor in each memory cell unit may be a split gate transistor, a metal-oxide-nitride-oxide-silicon, or silicon-oxide-nitride-oxide-silicon transistor. Further, the transistor included in the mask ROM unit in the semiconductor memory device may include enhancement transistors or depletion transistors in which a dopant ion-implanted region is formed at channel portions.

Abstract translation: 包括在片上系统（SOC）或微计算机芯片中的半导体存储器件。 半导体存储器件可以包括闪存单元阵列单元和掩模只读存储器（ROM）单元阵列单元，其形成在没有用于分离两个单元的隔离层的单个存储器块中。 包括在闪存单元和掩模ROM单元中的晶体管是相同类型的并且可以具有两个阈值电压。 每个存储单元单元中的晶体管可以是分离栅极晶体管，金属氧化物 - 氮化物 - 氧化物 - 硅或氧化硅 - 氮化物 - 氧化物 - 硅晶体管。 此外，包括在半导体存储器件中的掩模ROM单元中的晶体管可以包括其中在沟道部分形成掺杂剂离子注入区的增强晶体管或耗尽型晶体管。

公开(公告)号：US20070063267A1

公开(公告)日：2007-03-22

申请号：US11600765

申请日：2006-11-17

Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11568 ,  H01L27/115

Abstract: A self-aligned 1 bit silicon oxide nitride oxide silicon (SONOS) cell and a method of fabricating the same has high uniformity between adjacent SONOS cells, since the lengths of nitride layers do not vary due to misalignment when etching word lines of the 1 bit SONOS cells. An insulating layer pattern that forms a sidewall of a word line is formed on a semiconductor substrate, and a word line for a gate is formed on the sidewall thereof. Etching an ONO layer using a self-aligned etching spacer provides uniform adjacent SONOS cells.

Abstract translation: 自对准1比特氧化硅氮氧化物硅（SONOS）单元及其制造方法在相邻SONOS单元之间具有高均匀性，因为当蚀刻1比特的字线时，氮化物层的长度不会由于未对准而变化 SONOS细胞。 在半导体衬底上形成形成字线侧壁的绝缘层图案，在其侧壁上形成用于栅极的字线。 使用自对准蚀刻间隔物蚀刻ONO层提供均匀的相邻SONOS电池。

公开(公告)号：US20070061406A1

公开(公告)日：2007-03-15

申请号：US10558428

申请日：2004-01-20

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

IPC: G06F15/16

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network system (100) which can easily control home appliances by performing a preset control command for a predetermined event when the event is generated. The home network system (100) includes at least one slave device (60), and a master device (50) connected to the slave devices (60) through a predetermined network (90). The master device (50) stores an event file including an externally-inputted generation condition of a predetermined event and a control command for the event, and transmits an event set file including at least the generation condition of the event to the slave device (60) corresponding to the generation condition of the event, and the slave device (60) stores the event set file and transmits an event notification file to the master device (50) when the event is generated, so that the master device (50) can receive the event notification file and make the corresponding control command performed.

Abstract translation: 本发明公开了一种家庭网络系统（100），其能够通过在生成事件时对预定事件执行预设控制命令来容易地控制家用电器。 家庭网络系统（100）包括至少一个从设备（60）和通过预定网络（90）连接到从设备（60）的主设备（50）。 主设备（50）存储包括预定事件的外部输入的生成条件和事件的控制命令的事件文件，并且将至少包括事件的生成条件的事件集文件发送到从设备（60 ），并且所述从设备（60）存储所述事件集文件，并且在所述事件生成时将事件通知文件发送到所述主设备（50），从而所述主设备（50）可以 接收事件通知文件，并执行相应的控制命令。

公开(公告)号：US20060272341A1

公开(公告)日：2006-12-07

申请号：US11439421

申请日：2006-05-24

Applicant: Jong-Min Shin ,  Eun-Jeong Kim ,  Eun-Young Park ,  Yong-Chol Kwon ,  Yong-Tae Kim ,  Ku-Young Son

Inventor： Jong-Min Shin ,  Eun-Jeong Kim ,  Eun-Young Park ,  Yong-Chol Kwon ,  Yong-Tae Kim ,  Ku-Young Son

IPC: F25B49/00

CPC classification number: F25D29/00 ,  F25D2400/361 ,  F25D2700/08

Abstract: The present invention discloses a living information supply apparatus of a refrigerator which can supply living information relating to food taken out by a user to the user. The living information supply apparatus of the refrigerator includes a reading means for reading food information from RFID on food stored in the refrigerator and/or a packing sheet and/or a container, a storing means for storing various food information and living information corresponding to the food information, a display means for displaying living information, and a microcomputer for reading the living information corresponding to the food information of the reading means from the storing means, and displaying the living information on the display means.

Abstract translation: 本发明公开了一种冰箱的生活信息提供装置，其能够向使用者提供与用户取出的食物有关的生物信息。 冰箱的生物信息提供装置包括：读取装置，用于从存储在冰箱和/或包装纸和/或容器中的食物中的RFID读取食物信息;存储装置，用于存储各种食物信息和对应于 食物信息，用于显示生活信息的显示装置，以及从存储装置读取对应于读取装置的食物信息的生物信息并在显示装置上显示生物信息的微型计算机。

公开(公告)号：US07141473B2

公开(公告)日：2006-11-28

申请号：US10912046

申请日：2004-08-06

Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11568 ,  H01L27/115

Abstract: A self-aligned 1 bit silicon oxide nitride oxide silicon (SONOS) cell and a method of fabricating the same has high uniformity between adjacent SONOS cells, since the lengths of nitride layers do not vary due to misalignment when etching word lines of the 1 bit SONOS cells. An insulating layer pattern that forms a sidewall of a word line is formed on a semiconductor substrate, and a word line for a gate is formed on the sidewall thereof. Etching an ONO layer using a self-aligned etching spacer provides uniform adjacent SONOS cells.

Abstract translation: 自对准1比特氧化硅氮氧化物硅（SONOS）单元及其制造方法在相邻SONOS单元之间具有高均匀性，因为当蚀刻1比特的字线时，氮化物层的长度不会由于未对准而变化 SONOS细胞。 在半导体衬底上形成形成字线侧壁的绝缘层图案，在其侧壁上形成用于栅极的字线。 使用自对准蚀刻间隔物蚀刻ONO层提供均匀的相邻SONOS电池。

公开(公告)号：US20060248228A1

公开(公告)日：2006-11-02

申请号：US10558435

申请日：2004-05-14

Applicant: Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: G06F15/16

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849 ,  Y04S40/168

Abstract: The present invention discloses a home network system using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least one electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, wherein the protocol includes an application layer, a network layer, a data link layer and a physical layer, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code form network security when accessing the dependent transmission medium; and wherein an application layer protocol data unit (APDU) is transmitted between the application layer and the network layer, a network layer protocol data unit (NPDU) is transmitted between the network layer and the data link layer and the between the network layer and the home code control sub-layer, a home code control sub-layer protocol data unit (HCNPDU) is transmitted between the home code control sub-layer and the data link layer, and a data frame unit is transmitted between the data link layer and the physical layer.

Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括：基于预定协议的网络; 连接到网络的至少一个电气设备; 以及网络管理器，其连接到所述网络，用于控制和/或监视所述电子设备，其中所述协议包括应用层，网络层，数据链路层和物理层，其中所述物理层还包括用于 提供与依赖传输介质的接口，并且所述网络层还包括用于在访问所述从属传输介质时管理归属代码形式的网络安全性的归属代码控制子层; 并且其中应用层协议数据单元（APDU）在应用层与网络层之间传输，网络层协议数据单元（NPDU）在网络层与数据链路层之间以及网络层与网络层之间传输 归属码控制子层，归属码控制子层协议数据单元（HCNPDU）在归属码控制子层和数据链路层之间传输，数据帧单元在数据链路层和 物理层。

公开(公告)号：US20060248158A1

公开(公告)日：2006-11-02

申请号：US10558425

申请日：2004-05-14

Applicant: Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: G06F15/16

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network system using a living network control protocol. The home network system includes: at least one new device including a node address having an initial logical address through a network based on a predetermined protocol, transmitting a configuration request message having the node address to a master device, receiving a temporary address setting request message, changing the initial logical address by selecting one temporary logical address, generating a temporary address setting response message, transmitting the temporary address setting response message to the master device, receiving an address change request message having a predetermined logical address from the master device, changing the temporary logical address into the received logical address, and having a unique node address; and at least one master device for receiving the plurality of configuration request messages from the new device, setting the temporary logical address range for the new device, transmitting the temporary address setting request message having the set temporary logical address range to the new device, receiving the temporary address setting response message from the new device, setting the predetermined logical address of the new device, and transmitting the address change request message having the set logical address to the new device of the selected temporary address.

Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括：至少一个新设备，包括基于预定协议通过网络具有初始逻辑地址的节点地址，向主设备发送具有节点地址的配置请求消息，接收临时地址设置请求消息 通过选择一个临时逻辑地址来改变初始逻辑地址，产生临时地址设置响应消息，向主设备发送临时地址设置响应消息，从主设备接收具有预定逻辑地址的地址改变请求消息，改变 将临时逻辑地址转换为接收的逻辑地址，并具有唯一的节点地址; 以及至少一个主设备，用于从新设备接收多个配置请求消息，设置新设备的临时逻辑地址范围，将具有设置的临时逻辑地址范围的临时地址设置请求消息发送到新设备，接收 来自新设备的临时地址设置响应消息，设置新设备的预定逻辑地址，以及将具有设置的逻辑地址的地址改变请求消息发送到所选临时地址的新设备。