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311.发明授权公开(公告)号：US10349400B2
公开(公告)日：2019-07-09
申请号：US15836947
申请日：2017-12-11
Inventor： Xuesong Tan , Jieran Wang , Yifan Wang
Abstract: This invention relates to the field of communication technology, and particularly to a communication exchange mechanism design based on frequency hopping, which is applicable to cognitive radio networks. A method for generating hopping frequency sequences for multi-transceiver cognitive radio networks is provided, so as to realize the optimization and tradeoff of the five performance parameters, i.e. DoR, MTTR, ATTR, CL, and NSS. That, is, for a given DoR, the frequency-hopping system should minimize the NSS of the clock synchronous and asynchronous frequency-hopping systems under the condition of MTTR=ATTR=1 and CL
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公开(公告)号：US10251058B2
公开(公告)日：2019-04-02
申请号：US15310780
申请日：2015-08-24
Inventor： Hong Wen , Jinling Zhang , Runfa Liao , Jie Tang , Fei Pan
Abstract: A cross layer authentication method based on radio frequency fingerprint, it includes the following steps: S1. In the first time slot, the legitimate transmitter A sends the first packet to the legitimate receiver B, and then B identifies the first data packet by the upper layer authentication; S2. The legitimate recipient B extracts the RF fingerprint eigenvector of the legitimate sender A, and stores it in the memory of the legitimate receiver B; S3. In the next time slot, the sender X sends the second packet to the legitimate receiver B, and the legitimate recipient B extracts the RF fingerprint eigenvector of the sender X; S4. Set sample of the RF fingerprint eigenvector; S5. legitimate receiver B estimates the similarity between the RF fingerprint eigenvector of the sender X and sample of the RF fingerprint eigenvector. This invention is in advantage of low computational complexity, small delay and high precision.
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公开(公告)号：US20190080035A1
公开(公告)日：2019-03-14
申请号：US16163596
申请日：2018-10-18
Inventor： Lianping GUO , Hao ZENG , Feng TAN , Duyu QIU , Xianggong GUO , Yu LI
Abstract: The present invention provides a method for equivalent high sampling rate FIR filtering based on FPGA, first, the coefficients h(k) of FIR filter are found by using MATLAB, multiplied by an integer and then rounded for the purpose that the rounded coefficients h(k) can be directly used into a FPGA, then the ADC's output of high data rate fs is lowered by dividing the ADC's output x(n) into M parallel data streams xi(n) of low data rate, and the M×L samples in one clock circle is obtained by delaying the M parallel data streams xi(n) simultaneously by 1, 2, . . . , L′ periods of the synchronous clock, at last, the samples yi(n) of FIR filtering output is calculated according to the samples selected from the M×L samples, and the filtered data y(n) of data rate fs is obtained by putting the samples yi(n) together in ascending order of i. Thus, the continuous FIR filtering of an ADC's output sampled with high sampling rate is realized, while the data rates before and after the FIR filtering are unchanged.
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公开(公告)号：US20180364315A1
公开(公告)日：2018-12-20
申请号：US15823447
申请日：2017-11-27
Inventor： Qi Huang , Arsalan Habib Khawaja , Yafeng Chen , Shi Jing , Jian Li , Zhenyuan Zhang , Jianbo Yi
Abstract: An electronic current transformer for measuring currents includes a shielding structure, TMR sensor, conductor, amplification circuit, and circuit board. The shielding structure comprises a material that protects the sensor from external disturbance and damps the magnetic field from the internal conductor. The TMR sensor is connected to the amplification circuit for electric current measurement by means of reconstruction of magnetic field measurement. The TMR sensor is configured to receive data from the conductor and to transmit the data to the amplification circuit, which is configured to amplify the data and release the data as an output of the transformer.
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公开(公告)号：US20180364307A1
公开(公告)日：2018-12-20
申请号：US15729298
申请日：2017-10-10
Inventor： Zaiming FU , Hanglin LIU , Jianguo HUANG , Yijiu ZHAO
IPC: G01R31/317 , G01R31/3193 , G01R31/30
Abstract: The present invention provides an apparatus for adding jitters to the edges of a pulse sequence, the pulse sequence which edges is needed to adding jitters to is sent to a first edge-pulse converter and a second edge-pulse converter respectively, and be converted into a rising edge pulse signal and a falling edge pulse signal. The rising edge pulse signal and the falling edge pulse signal are delayed by different fixed times, and for the edge pulse signal which is delayed shorter, it should be further delayed by a programmable delay circuit, thus the edge to which the jitter is added can be adjusted to a leading position or a lagging position according to a jitter data read out from a jitter data storage, so the synthesized pulse sequence with jitter-added edges can be used as test signal for jitter tolerance measurement.
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Patent Agency Ranking
公开(公告)号：US20180340848A1
公开(公告)日：2018-11-29
申请号：US16036612
申请日：2018-07-16
Inventor： Huiling Tai , Yujin Yao , Dongsheng Wang , Zhen Yuan , Yadong Jiang , Guangzhong Xie , Xiaosong Du
IPC: G01L1/22 , C09D133/02 , C08J7/04
Abstract: A three-layer self-healing flexible strain sensor includes: a self-healing sensitive layer, wherein a self-healing encapsulating layer is respectively placed on an upper surface and a lower surface of the self-healing sensitive layer. The self-healing sensitive layer comprises a doped carbon material or a conductive composite. The three self-healing layers of the self-healing strain sensor can quickly repair the internal and external damage caused by the layered structure in a short period of time after the external damage, and does not require external stimulation. The three-layer self-healing structure strain sensor is simple in preparation without using a repair agent, which can achieve rapid self-repair at the room temperature, and can be repeatedly repair. The three-layer self-healing structure increases the strength and modulus of the strain sensor as well as increases the ability of the strain sensor to resist external damage.
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公开(公告)号：US20180294335A1
公开(公告)日：2018-10-11
申请号：US15623371
申请日：2017-06-14
Inventor： Xiaorong LUO , Fu PENG , Chao YANG , Jie WEI , Siyu DENG , Dongfa OUYANG , Bo ZHANG
IPC: H01L29/15 , H01L29/06 , H01L29/207 , H01L29/423 , H01L29/78 , H01L29/20 , H01L29/10
CPC classification number: H01L29/158 , H01L29/0615 , H01L29/1054 , H01L29/157 , H01L29/2003 , H01L29/207 , H01L29/4236 , H01L29/7788 , H01L29/7827
Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.
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公开(公告)号：US10090584B2
公开(公告)日：2018-10-02
申请号：US15466640
申请日：2017-03-22
Inventor： Zhaoyun Duan , Fei Wang , Xin Wang , Zhanliang Wang , Qing Zhou , Xinyi Li , Yubin Gong
Abstract: The present invention provides a miniature wideband antenna for 5G, which includes a dielectric substrate, a coplanar waveguide feed structure on a front of the dielectric substrate, a main radiator, a second and third radiators and a first radiator on a back of the dielectric substrate. The antenna is small in size with operation band of 3 GHz-30 GHz which covers the various 5G frequency band and covers the current wireless modes of Wi-MAX, W-LAN, UWB and so on. The antenna guarantees future compatibility for various complicated communication modes and has good perspectives for many applications. Based on the antenna, the double-unit and four-unit MIMO antenna adopts orthogonal polarization and metamaterial unit. Thus, high unit separation is achieved without increase on the size of the antenna unit. The present invention has wide applications in small mobile device such as cell phone and laptop.
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319.发明授权公开(公告)号：US10085272B2
公开(公告)日：2018-09-25
申请号：US15809840
申请日：2017-11-10
Inventor： Gang Sun , Yueyue Dai , Du Xu , Dan Liao , Hongfang Yu
CPC classification number: H04W72/085 , H04W24/10 , H04W28/02 , H04W36/30 , H04W48/20 , H04W72/0406 , H04W72/082
Abstract: The present invention provides a method for associating a user with a base station based on backhaul capacity in heterogeneous cellular network. First, an available base station set is obtained through the SINRs, and the downlink data rate between the new user and each base station in the available base station set is calculated according to the SINR between them; Then, the usable link capacity factor of each base station is calculated based on the used link capacity and the backhaul capacity; Finally, the optimal base station is selected for the new user i under a constraint which is constructed by the bandwidth of the new user and the usable link capacity factor. The backhaul capacity of each base station is taken into account in selecting the optimal base station to associate with for the new user, thus the real time of user association and the overall performance of heterogeneous cellular network can be guaranteed.
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公开(公告)号：US20180240955A1
公开(公告)日：2018-08-23
申请号：US15936442
申请日：2018-03-27
Inventor： Chao Wang , Junfeng Xia , Jing Jiang , Ting Zhou , Yide Chen , Yi Niu , Rui Zhang , Hanqing Tian , Yan Pan
CPC classification number: H01L35/22 , C01B21/062 , H01L35/34
Abstract: The present invention discloses CrN thermoelectric material and its preparation method, which belongs to the field of thermoelectric materials. Here, we provide a study for thermoelectric properties, hardness, wear-resisting performance and thermal stability of CrN. These results show that CrN possesses excellent mechanical properties and thermal stability. The hardness of the bulk CrN sample is as high as 735.76 HV, which is far superior to most of thermoelectric materials. The thermogravimetric analysis test indicates that CrN remain stable at 873 K. Friction and wear test results demonstrate that the low friction coefficient (˜0.42) and good wear resistance of CrN. The maximum ZT value of 0.104 is observed at 848 K. In this way, CrN may be a promising thermoelectric material in extreme environment application which requires both mechanical and thermoelectric properties. Such as collision avoidance systems and outerspace.
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