公开(公告)号：US06628052B2

公开(公告)日：2003-09-30

申请号：US09972430

申请日：2001-10-05

Applicant: Arthur Piehl

Inventor： Arthur Piehl

IPC: H01J102

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/319

Abstract: An enhanced Spindt-tip field emitter tip and a method for producing the enhanced Spindt-tip field emitter. A thin-film resistive heating element is positioned below the field emitter tip to allow for resistive heating of the tip in order to sharpen the tip and to remove adsorbed contaminants from the surface of the tip. Metal layers of the enhanced field emission device are separated by relatively thick dielectric bilayers, with the metal layers having increased thickness in the proximity of a cylindrical well in which the field emitter tip is deposited. Dielectric material is pulled back from the cylindrical aperture into which the field emitter tip is deposited in order to decrease buildup of conductive contaminants and the possibility of short circuits between metallic layers.

Abstract translation: 增强的Spindt-tip场发射器尖端和用于产生增强的Spindt-tip场发射器的方法。 薄膜电阻加热元件位于场发射器尖端下方，以允许尖端的电阻加热，以便锐化尖端并从尖端的表面去除吸附的污染物。 增强型场致发射器件的金属层由相对厚的电介质双层隔开，金属层在其中沉积场致发射极尖端的圆柱形阱附近具有增加的厚度。 电介质材料从圆柱形孔中被拉回，放射场尖端被沉积到其中，以减少导电污染物的积聚和金属层之间短路的可能性。

公开(公告)号：US06590322B2

公开(公告)日：2003-07-08

申请号：US10012615

申请日：2001-12-12

Applicant: David S. Y. Hsu

Inventor： David S. Y. Hsu

IPC: H01J113

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

公开(公告)号：US20030034721A1

公开(公告)日：2003-02-20

申请号：US09933031

申请日：2001-08-20

Inventor： Henry Windischmann ,  Randolph D. Schueller ,  Byron G. Zollars ,  Keith D. Jamison ,  Donald E. Patterson ,  Kent R. Kalar

IPC: H01J001/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: An array of carbon-based emitters is provided having more uniform electron emission over the area of the array. This is made possible by a resistive layer that is present below each of the emission tips. Both organic and inorganic resistive layers may be grown under the emitting carbon-based material. A conductive backing layer is in contact with the resistive layer. Methods for making the improved array are provided. The methods include growth of carbon-based tips in a mold, removal of various films or portions of films by etching, and other techniques.

Abstract translation: 提供了在阵列的区域上具有更均匀的电子发射的碳基发射体的阵列。 这通过存在于每个发射尖端下面的电阻层成为可能。 有机和无机电阻层都可以在发射碳基材料下生长。 导电背衬层与电阻层接触。 提供了改进阵列的方法。 这些方法包括在模具中生长碳基尖端，通过蚀刻去除各种膜或部分膜以及其它技术。

公开(公告)号：US20020175607A1

公开(公告)日：2002-11-28

申请号：US10191653

申请日：2002-07-08

Inventor： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC: H01J001/02

CPC classification number: H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: An apparatus for stabilizing the threshold voltage in an active matrix field emission device. The apparatus includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract translation: 一种用于稳定有源矩阵场发射装置中的阈值电压的装置。 该装置包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

公开(公告)号：US20020173812A1

公开(公告)日：2002-11-21

申请号：US10113248

申请日：2002-04-01

Inventor： James F. McGuckin JR. ,  Peter W. H. Hinchliffe ,  Walter H. Peters

IPC: A61B017/22

CPC classification number: A61B17/320758 ,  A61B17/22 ,  A61B17/22032 ,  A61B2017/00734 ,  A61B2017/22084 ,  A61B2017/320008 ,  A61B2017/320733 ,  A61M25/0032 ,  A61M25/0041 ,  A61M25/10 ,  A61M25/1011 ,  A61M2025/0681 ,  B82Y10/00 ,  H01J1/3042 ,  H01J2201/319

Abstract: A thrombectomy apparatus for breaking up thrombus or other obstructive material in a lumen of a vascular graft or vessel comprising a flexible sheath, and a wire positioned within the flexible sheath wherein the wire and flexible sheath are relatively movable. The wire is substantially sinuous in configuration and assumes a substantially sinuous shape when in the deployed position and assumes a straighter position in the retracted position. The wire is operatively connected to a motor for rotation of the wire to enable peaks of the sinuous wire to contact a wall of the lumen to break up the thrombus or other obstructive material.

Abstract translation: 一种用于分解血管移植物或容器的腔中的血栓或其他阻塞物质的血栓切除装置，其包括柔性护套，以及定位在柔性护套内的电线，其中电线和柔性护套是相对可移动的。 导线在构造上基本上是弯曲的，并且当处于展开位置并且在缩回位置中呈现更直的位置时呈现基本上呈弯曲的形状。 电线可操作地连接到电动机以旋转电线，以使得蜿蜒线的峰值能够与内腔的壁接触以分解血栓或其它阻塞物质。

公开(公告)号：US06462467B1

公开(公告)日：2002-10-08

申请号：US09371807

申请日：1999-08-11

Applicant: Benjamin E. Russ

Inventor： Benjamin E. Russ

IPC: H01J162

CPC classification number: H01J1/3048 ,  H01J9/025 ,  H01J2201/319

Abstract: Electrophoretic deposition provides an inexpensive, efficient process for manufacturing a field emission cathode. Particles of a resistive material are deposited by electrophoretic deposition on a conducting layer overlying an insulating layer. An electron emitting layer is then applied over the resistive material to produce the cathode. By controlling the composition of the deposition bath, an electrophoretic deposition process can be used to efficiently produce field emission cathodes that provide a spatially and temporally stable emission field. The deposition bath for the field emission cathode includes an alcohol, a charging salt, water, and a dispersant. The field emission cathodes can be used as an electron source in a field emission display device.

Abstract translation: 电泳沉积提供了用于制造场致发射阴极的廉价，有效的方法。 通过电泳沉积将电阻材料的颗粒沉积在覆盖绝缘层的导电层上。 然后将电子发射层施加在电阻材料上以产生阴极。 通过控制沉积浴的组成，可以使用电泳沉积工艺来有效地产生提供空间和时间稳定的发射场的场致发射阴极。 用于场致发射阴极的沉积浴包括醇，充电盐，水和分散剂。 场发射阴极可以用作场致发射显示装置中的电子源。

公开(公告)号：US06420826B1

公开(公告)日：2002-07-16

申请号：US09476765

申请日：2000-01-03

Applicant: Alan F. Jankowski ,  Anthony P. Schmid

Inventor： Alan F. Jankowski ,  Anthony P. Schmid

IPC: H01J1942

CPC classification number: H01C17/12 ,  H01J31/127 ,  H01J2201/319

Abstract: Thin films of Ti—Cr—Al—O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O2. Resistivity values from 104 to 1010 Ohm-cm have been measured for Ti—Cr—Al—O film

Abstract translation: Ti-Cr-Al-O薄膜用作电阻材料。 使用Ar和O2的反应性工作气体混合物，从陶瓷靶溅射沉积膜。 已经测量了厚度<1μm的Ti-Cr-Al-O膜的电阻率值为104至1010欧姆 - 厘米。 可以通过控制靶组成和沉积参数离散地选择膜电阻率。 与其他金属氧化物膜不同，已发现Ti-Cr-Al-O作为薄膜电阻器的应用是热力学稳定的。 Ti-Cr-Al-O膜可以用作垂直或横向电阻器，例如，作为平板显示器中的场发射阴极下面的层; 或用于控制表面发射率，例如，作为绝缘材料上的涂层，例如平板显示器中的垂直壁支撑。

公开(公告)号：US06379210B2

公开(公告)日：2002-04-30

申请号：US09727023

申请日：2000-11-29

Applicant: Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC: H01J902

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US06356014B2

公开(公告)日：2002-03-12

申请号：US08826454

申请日：1997-03-27

Applicant: Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC: H01J130

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat-panel display contains an emitter layer (213) divided into emitter lines, a plurality of electron emitters (229, 239, or 230) situated over the emitter lines, and a gate layer (215A) having an upper surface spaced largely above the electron emitters. The gate layer has a plurality of gate holes (215B) each corresponding to one of the electron emitters. The cathode structure further includes a carbon-containing layer (340, 240, or 241) coated over the electron emitters and directly on at least part of the upper surface of the gate layer such that at least part of the carbon-containing layer extending along and above the gate layer is exposed.

Abstract translation: 适用于平板显示器的阴极结构包含分为发射极线的发射极层（213），位于发射极线之上的多个电子发射体（229,239或230），以及栅极层（215A），具有 上表面大大高于电子发射体。 栅极层具有多个对应于一个电子发射体的栅极孔（215B）。 阴极结构还包括涂覆在电子发射体上并直接位于栅极层的上表面的至少部分上的含碳层（340,240或241），使得至少部分含碳层沿着 并且栅极层上方露出。

公开(公告)号：US20010011977A1

公开(公告)日：2001-08-09

申请号：US09774812

申请日：2001-01-30

Inventor： David A. Cathey JR. ,  Kevin W. Tjaden ,  Behnam Moradi ,  John K. Lee ,  James J. Alwan

IPC: G09G003/20

CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract translation: 用于场发射显示器的半导体器件包括由半导体材料，玻璃，钠钙或塑料形成的衬底。 在基板上形成第一导电材料层。 在第一层上形成第二层微晶硅。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 在第二层上形成一个或多个冷阴极发射体。