公开(公告)号：US06890233B2

公开(公告)日：2005-05-10

申请号：US10414573

申请日：2003-04-15

申请人： David S. Y. Hsu

发明人： David S. Y. Hsu

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J1/62 ,  H01J3/02 ,  H01J9/00 ,  H01J9/02 ,  H01J19/24 ,  H01J63/04 ,  H01L20060101

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

摘要： A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other application that require high emission currents.

摘要翻译： 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场发射极电池具有较低的栅极电流，可用于需要高发射电流的各种应用，如场致发射显示器，高压电源开关，微波，射频放大和其他应用。

公开(公告)号：US06448701B1

公开(公告)日：2002-09-10

申请号：US09804641

申请日：2001-03-09

申请人： David S. Y. Hsu

发明人： David S. Y. Hsu

IPC分类号： H01J130

CPC分类号： B82Y10/00 ,  H01J3/022 ,  H01J2201/30469 ,  Y10S977/952

摘要： The present invention discloses a new field emitter cell and array consisting of groups of nanofilaments forming emitter cathodes. Control gates are microprocessed to be integrally formed with groups of nanofilament emitter cathodes on a substrate. Groups of nanofilaments are grown directly on the substrate material. As a result, the control gates and groups of nanofilaments are self-aligned with one another.

摘要翻译： 本发明公开了一种由形成发射极阴极的纳米丝组成的新的场发射极和阵列。 控制栅极被微处理以与衬底上的纳米丝发射极阴极的组一体形成。 纳米丝的组直接在基底材料上生长。 结果，控制门和纳米丝组彼此自对准。

公开(公告)号：US5246879A

公开(公告)日：1993-09-21

申请号：US782197

申请日：1991-10-24

申请人： David S. Y. Hsu ,  Henry F. Gray

发明人： David S. Y. Hsu ,  Henry F. Gray

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/768

CPC分类号： H01L21/76885 ,  H01L21/033 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/76802 ,  H01L21/76807 ,  Y10S148/105 ,  Y10S148/111 ,  Y10S438/947

摘要： Nanometer thick metallic layers are fabricated on trenches or holes (espelly vias) within a substrate by depositing, by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, a metallic layer on a substrate surface on which one or more trenches or holes are formed. The metallic layer thus formed has an extremely small grain size, which permits the attainment of very high spatial resolution and thus permits the formation of extremely small trenches and holes, increasing the attainable memory/circuit density. This invention is useful in the fabrication of ultra-high density trench capacitors and ULSI microelectronic circuits.

摘要翻译： 通过在载体气体低压存在下，通过在含有挥发性金属的前体气体的热分解下沉积基底表面上的金属层，在衬底内的沟槽或孔（特别是通孔）上制造纳米厚的金属层 形成一个或多个沟槽或孔。 如此形成的金属层具有非常小的晶粒尺寸，这允许获得非常高的空间分辨率，从而允许形成极小的沟槽和孔，从而增加可达到的存储/电路密度。 本发明可用于制造超高密度沟槽电容器和ULSI微电子电路。

公开(公告)号：US06379583B1

公开(公告)日：2002-04-30

申请号：US09467968

申请日：1999-12-21

申请人： Henry F. Gray ,  Jianping Yang ,  David S. Y. Hsu ,  Banhalli R. Ratna ,  Syed B. Qadri

发明人： Henry F. Gray ,  Jianping Yang ,  David S. Y. Hsu ,  Banhalli R. Ratna ,  Syed B. Qadri

IPC分类号： C30B700

CPC分类号： C09K11/574 ,  C09K11/08 ,  C30B7/00 ,  C30B29/605 ,  Y10S977/749 ,  Y10S977/773 ,  Y10S977/824 ,  Y10S977/825

摘要： Nanocrystalline phosphors are formed within a bicontinuous cubic phase.

摘要翻译： 在双连续立方相内形成纳米晶体荧光体

公开(公告)号：US06333598B1

公开(公告)日：2001-12-25

申请号：US09478899

申请日：2000-01-07

申请人： David S. Y. Hsu ,  Henry F. Gray

发明人： David S. Y. Hsu ,  Henry F. Gray

IPC分类号： H01J162

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

摘要： A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

摘要翻译： 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US06168491A

公开(公告)日：2001-01-02

申请号：US09448905

申请日：1999-11-29

申请人： David S. Y. Hsu ,  Henry F. Gray

发明人： David S. Y. Hsu ,  Henry F. Gray

IPC分类号： H01J902

CPC分类号： H01J9/025 ,  H01J2201/30423

摘要： A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

摘要翻译： 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射体是包含夹在两个保护层之间的低功函数材料的多层结构。 场发射器可以由包括导电衬底层，绝缘层，支座层和栅极层的复合起始结构制成，其中穿孔从栅极层延伸到衬底层中。 发射体材料通过化学束沉积沿着穿孔的侧壁共形沉积。 或者，起始材料可以是其上具有突起的导电基底。 顺序地沉积发射极层，隔离层，绝缘层和栅极层，并且优先除去其中不需要的部分以提供所需的结构。

公开(公告)号：US5320978A

公开(公告)日：1994-06-14

申请号：US099510

申请日：1993-07-30

申请人： David S. Y. Hsu

发明人： David S. Y. Hsu

IPC分类号： C23C16/04 ,  C23C16/06 ,  H01L21/285 ,  H01L21/283

CPC分类号： H01L21/28562 ,  C23C16/042 ,  C23C16/06 ,  Y10S438/942

摘要： A process for selectively depositing platinum on a conductive or semiconductive substrate has the steps of: patterning a polyimide layer on the substrate to have exposed areas and unexposed areas; and, at an operating temperature and an operating pressure, flowing a platinum precursor gas over the substrate.

摘要翻译： 用于在导电或半导体衬底上选择性沉积铂的方法具有以下步骤：在衬底上图案化具有暴露区域和未曝光区域的聚酰亚胺层; 并且在操作温度和操作压力下将铂前体气体流过衬底。

公开(公告)号：US06590322B2

公开(公告)日：2003-07-08

申请号：US10012615

申请日：2001-12-12

申请人： David S. Y. Hsu

发明人： David S. Y. Hsu

IPC分类号： H01J113

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

摘要： A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

公开(公告)号：US06402985B1

公开(公告)日：2002-06-11

申请号：US09531159

申请日：2000-03-17

申请人： David S. Y. Hsu ,  Yongchi Tian

发明人： David S. Y. Hsu ,  Yongchi Tian

IPC分类号： C09K1100

CPC分类号： C09K11/0838 ,  C09K11/08

摘要： Doped phosphors (e.g., metal orthosilicates) are made by adding solid particulate precursor to a solution of an alkoxide precursor and a dopant precursor before hydrolysis is allowed to occur. The mixture is then allowed to hydrolyze, resulting in a sol-gel condensation reaction. The solid particulate precursor can be fumed silica, and acts as a nucleation site for the sol-gel reaction product. After the sol-gel reaction, the mixture is dried and fired to form phosphors. The phosphors are especially suitable for applications in which there is low voltage operation.

摘要翻译： 通过在允许发生水解之前将固体颗粒前体添加到醇盐前体和掺杂剂前体的溶液中来制备掺杂磷光体（例如，金属原硅酸盐）。 然后使混合物水解，导致溶胶 - 凝胶缩合反应。 固体颗粒前体可以是热解法二氧化硅，并且用作溶胶 - 凝胶反应产物的成核位点。 溶胶 - 凝胶反应后，将混合物干燥并焙烧形成荧光体。 这些荧光体特别适用于存在低电压操作的应用。

公开(公告)号：US5584740A

公开(公告)日：1996-12-17

申请号：US321642

申请日：1994-10-11

申请人： David S. Y. Hsu ,  Henry F. Gray

发明人： David S. Y. Hsu ,  Henry F. Gray

IPC分类号： H01J1/304 ,  H01J9/02

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

摘要： A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

摘要翻译： 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底，突起限定至少一个侧壁，侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上，发射极层选自半导体和导体，并且是包括延伸超过第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上，该对支撑层各自选自由半导体和导体组成的组，并且每个具有比发射极层更高的功函数。