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公开(公告)号:US2738566A
公开(公告)日:1956-03-20
申请号:US50891955
申请日:1955-05-17
Applicant: CARTER WILLIAM CO
Inventor: SCOTT JR THOMAS P
IPC: D04B1/10
CPC classification number: D04B1/16 , D04B1/102 , D10B2403/0231 , Y10T428/24636
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公开(公告)号:US2403986A
公开(公告)日:1946-07-16
申请号:US53466944
申请日:1944-05-08
Applicant: BELL TELEPHONE LABOR INC
Inventor: LACY LESTER Y
IPC: G10L21/06
CPC classification number: G10L21/06
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公开(公告)号:US1744009A
公开(公告)日:1930-01-14
申请号:US33038229
申请日:1929-01-04
Applicant: GEN MOTORS CORP
Inventor: PARKER GUY E
IPC: B60K5/12
CPC classification number: B60K5/1208
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公开(公告)号:US11996465B2
公开(公告)日:2024-05-28
申请号:US17486000
申请日:2021-09-27
Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
Inventor: Alexis Gauthier , Pascal Chevalier
CPC classification number: H01L29/66234 , H01L21/22 , H01L29/0649 , H01L29/73
Abstract: A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.
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公开(公告)号:US11978530B2
公开(公告)日:2024-05-07
申请号:US17556039
申请日:2021-12-20
Applicant: STMicroelectronics SA
Inventor: Faress Tissafi Drissi
IPC: G11C7/24 , G11C11/419
CPC classification number: G11C7/24 , G11C11/419
Abstract: A memory includes memory cells arranged in rows and in columns, with at least one bit line for each column being coupled to the memory cells of the column. A read/write circuit is coupled to the bit lines and is configured to receive, for each column, a binary datum to be stored in one of the memory cells of the column. The read/write circuit includes, for each column, a latch configured to store a bit of a key, and an encryption circuit configured to encrypt the received binary datum with the bit of the key to provide encrypted binary datum. The read/write circuit controls the bit line to thereby store the encrypted binary datum.
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公开(公告)号:US20240056063A1
公开(公告)日:2024-02-15
申请号:US18492597
申请日:2023-10-23
Applicant: STMICROELECTRONICS SA
Inventor: Lionel Vogt
IPC: H03K5/00
CPC classification number: H03K5/00006
Abstract: In an embodiment a radiofrequency doubler includes a first transistor and a second transistor connected in parallel between a first differential output and a first terminal of a current source configured to provide a bias current, a second terminal of the current source being connected to a first supply potential, a third transistor connected between the first terminal of the current source and a second differential output, a circuit configured to apply an AC component of a first differential input and a first DC voltage to a gate of the first transistor, apply an AC component of a second differential input and the first DC voltage to a gate of the second transistor and apply a second DC voltage to a gate of the third transistor, and a feedback loop configured to control the first voltage or the second voltage from a difference between DC components of the first and second differential outputs so as to equalize the DC components.
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327.
公开(公告)号:US20240048863A1
公开(公告)日:2024-02-08
申请号:US18482117
申请日:2023-10-06
Applicant: STMicroelectronics SA
Inventor: Valentin Rebiere , Antoine Drouot
IPC: H04N25/60 , H04N23/84 , H04N25/13 , H04N25/705
CPC classification number: H04N25/60 , H04N23/843 , H04N25/13 , H04N25/705
Abstract: An embodiment method for estimating a missing or incorrect value in a table of values generated by a photosite matrix comprises a definition of a zone of the table comprising the value to be estimated and other values, referred to as neighboring values, and an estimation of the value to be estimated based on the primary neighboring values and the weight associated with these primary neighboring values, wherein a weight of each neighboring value, referred to as primary neighboring value, of the same colorimetric component as that of the missing or incorrect value to be estimated, is determined according to differences between neighboring values disposed on an axis and neighboring values disposed parallel with this axis and positioned in relation to this axis on the same side as the primary neighboring value for which the weight is determined.
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328.
公开(公告)号:US11887982B2
公开(公告)日:2024-01-30
申请号:US17191250
申请日:2021-03-03
Applicant: STMicroelectronics SA
Inventor: Johan Bourgeat
CPC classification number: H01L27/0266 , H01L27/0277 , H01L27/0629 , H02H9/046 , H01L28/20
Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.
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公开(公告)号:US11886214B2
公开(公告)日:2024-01-30
申请号:US17393658
申请日:2021-08-04
Applicant: STMicroelectronics SA
Inventor: Lionel Vogt , Eoin Padraig O Hannaidh
Abstract: A low-dropout regulator includes a power stage having an output terminal coupled to a load circuit operable in different operating modes in which it receives different output currents. An error amplifier has a first input coupled to a reference voltage and an output coupled to an input terminal of the power stage. A compensation circuit includes a first stage with an RC filter coupled to the input terminal of the power stage, and generating an initial compensation voltage. A second stage includes a first transistor coupled between a supply voltage and a second node, and controlled by a complementary control signal, a high-side capacitor coupled between the second node and ground, and a third transistor coupled between the initial compensation voltage and the second node, and controlled by a control signal representative of the current operating mode of the load circuit.
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公开(公告)号:US20240023468A1
公开(公告)日:2024-01-18
申请号:US18190901
申请日:2023-03-27
Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMicroelectronics (Crolles 2) SAS , STMICROELECTRONICS SA
Inventor: Alain FLEURY , Stephane MONFRAY , Philippe CATHELIN , Bruno REIG , Vincent PUYAL
CPC classification number: H10N70/8613 , H10N70/231 , H10N70/253 , H10N70/841 , H10N70/8828
Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.
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