Systems and methods for thermally conditioning a wafer in a charged particle beam apparatus

    公开(公告)号:US11139141B2

    公开(公告)日:2021-10-05

    申请号:US16675192

    申请日:2019-11-05

    Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

    METHOD FOR PROCESS METROLOGY
    372.
    发明申请

    公开(公告)号:US20210302845A1

    公开(公告)日:2021-09-30

    申请号:US16330417

    申请日:2017-08-16

    Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

    Method of measuring variation, inspection system, computer program, and computer system

    公开(公告)号:US11131936B2

    公开(公告)日:2021-09-28

    申请号:US16486169

    申请日:2018-02-07

    Abstract: Methods of measuring variation across multiple instances of a pattern on a substrate or substrates after a step in a device manufacturing process are disclosed. In one arrangement, data representing a set of images is received. Each image represents a different instance of the pattern, wherein the pattern includes a plurality of pattern elements. The set of images are registered relative to each other to superimpose the instances of the pattern. The registration includes applying different weightings to two or more of the plurality of pattern elements, wherein the weightings control the extent to which each pattern element contributes to the registration of the set of images and each weighting is based on an expected variation of the pattern element to which the weighting is applied. Variation in the pattern is measured using the registered set of images.

    Beam splitting apparatus
    375.
    发明授权

    公开(公告)号:US11112618B2

    公开(公告)日:2021-09-07

    申请号:US15754480

    申请日:2016-08-03

    Abstract: A beam-splitting apparatus arranged to receive an input radiation beam and split the input radiation beam into a plurality of output radiation beams. The beam-splitting apparatus comprising a plurality of reflective diffraction gratings arranged to receive a radiation beam and configured to form a diffraction pattern comprising a plurality of diffraction orders, at least some of the reflective diffraction gratings being arranged to receive a 0th diffraction order formed at another of the reflective diffraction gratings. The reflective diffraction gratings are arranged such that the optical path of each output radiation beam includes no more than one instance of a diffraction order which is not a 0th diffraction order.

    Lithographic method and apparatus
    377.
    发明授权

    公开(公告)号:US11106144B2

    公开(公告)日:2021-08-31

    申请号:US16629480

    申请日:2018-06-12

    Abstract: Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.

    Metrology recipe selection
    378.
    发明授权

    公开(公告)号:US11106142B2

    公开(公告)日:2021-08-31

    申请号:US16733890

    申请日:2020-01-03

    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

    Charged particle blocking element, exposure apparatus comprising such an element, and method for using such an exposure apparatus

    公开(公告)号:US11101099B2

    公开(公告)日:2021-08-24

    申请号:US16638124

    申请日:2018-06-21

    Abstract: The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

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