公开(公告)号：US07795656B2

公开(公告)日：2010-09-14

申请号：US12017489

申请日：2008-01-22

申请人： Chang-rok Moon

发明人： Chang-rok Moon

IPC分类号： H01L31/0232 ,  G01J3/461

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H04N5/361

摘要： An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein, and a filter unit on the pixel metal wire layer. The filter unit includes a plurality of filters that are configured to transmit light according to a wavelength thereof. The filters of the filter unit in the optical black pixel region of the image sensor device have a single color. The image sensor device further includes a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit. The light blocking layer is configured to block light that passes through the filter unit.

摘要翻译： 图像传感器装置包括光学黑色像素区域和有源像素区域。 图像传感器装置包括：受光单元，包括被配置为检测入射到其上的光的多个光敏半导体器件;在光接收单元上包括透明材料的像素金属线层，并且其中包括多个金属线;以及 像素金属线层上的滤光器单元。 滤波器单元包括多个滤波器，其被配置为根据其波长透射光。 图像传感器装置的光学黑色像素区域中的滤光器单元的滤光器具有单一颜色。 图像传感器装置还包括在滤光单元和光接收单元之间的光学黑色像素区域中的遮光层。 遮光层被配置为阻挡通过过滤器单元的光。

公开(公告)号：US20090315137A1

公开(公告)日：2009-12-24

申请号：US12547046

申请日：2009-08-25

申请人： DOO-WON KWON ,  JONG-RYEOL YOO ,  CHANG-ROK MOON

发明人： DOO-WON KWON ,  JONG-RYEOL YOO ,  CHANG-ROK MOON

IPC分类号： H01L31/02

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。

公开(公告)号：US20080203452A1

公开(公告)日：2008-08-28

申请号：US12037691

申请日：2008-02-26

申请人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

发明人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

公开(公告)号：US20080191209A1

公开(公告)日：2008-08-14

申请号：US12017489

申请日：2008-01-22

申请人： Chang-rok Moon

发明人： Chang-rok Moon

IPC分类号： H01L31/0232 ,  G01J3/46 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H04N5/361

摘要： An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein, and a filter unit on the pixel metal wire layer. The filter unit includes a plurality of filters that are configured to transmit light according to a wavelength thereof. The filters of the filter unit in the optical black pixel region of the image sensor device have a single color. The image sensor device further includes a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit. The light blocking layer is configured to block light that passes through the filter unit.

摘要翻译： 图像传感器装置包括光学黑色像素区域和有源像素区域。 图像传感器装置包括：受光单元，包括被配置为检测入射到其上的光的多个光敏半导体器件;在光接收单元上包括透明材料的像素金属线层，并且在其中包括多个金属线;以及 像素金属线层上的滤光器单元。 滤波器单元包括多个滤波器，其被配置为根据其波长透射光。 图像传感器装置的光学黑色像素区域中的滤光器单元的滤光器具有单一颜色。 图像传感器装置还包括在滤光单元和光接收单元之间的光学黑色像素区域中的遮光层。 遮光层被配置为阻挡通过过滤器单元的光。

公开(公告)号：US20080150057A1

公开(公告)日：2008-06-26

申请号：US11951070

申请日：2007-12-05

申请人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

发明人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

摘要翻译： 公开了一种图像传感器及其制造方法。 通过在半导体衬底的有源像素传感器区域和半导体衬底的光学黑色区域中的半导体衬底的前表面处形成光电转换元件来形成图像传感器，使得与前表面相对的半导体衬底的表面被去除 处理以形成半导体衬底的背面，并在光学黑色区域的后表面上形成遮光膜图案。 遮光膜图案包括有机材料。

公开(公告)号：US20080131588A1

公开(公告)日：2008-06-05

申请号：US11987607

申请日：2007-12-03

申请人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

发明人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

IPC分类号： B05D5/12

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

摘要： A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

摘要翻译： 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间，所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。

公开(公告)号：US20080036022A1

公开(公告)日：2008-02-14

申请号：US11785196

申请日：2007-04-16

申请人： Sung-ho Hwang ,  Duck-hyung Lee ,  Chang-rok Moon

发明人： Sung-ho Hwang ,  Duck-hyung Lee ,  Chang-rok Moon

IPC分类号： H01L31/052 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/1464

摘要： An image sensor and a method of manufacturing same is disclosed. The image sensor implements a reflecting film formed on a front surface of a substrate having a back-illuminated photodetector. The reflecting film operates to reflect wavelengths of light that were not received by the photodetector back to the photodetector to increase the overall sensitivity of the image detector. The reflective film is formed by layering different thicknesses of material with different indices of refraction, resulting in a high reflectance.

摘要翻译： 公开了一种图像传感器及其制造方法。 图像传感器实现形成在具有背照式光电检测器的基板的前表面上的反射膜。 反射膜操作以将未被光电检测器接收的光的波长反射回到光电检测器以增加图像检测器的整体灵敏度。 反射膜通过分层具有不同折射率的不同厚度的材料形成，导致高反射率。

公开(公告)号：US10033974B2

公开(公告)日：2018-07-24

申请号：US14797656

申请日：2015-07-13

申请人： Ha-Kyu Choi ,  Chang-Rok Moon ,  June-Taeg Lee ,  Hyung-Jun Kim

发明人： Ha-Kyu Choi ,  Chang-Rok Moon ,  June-Taeg Lee ,  Hyung-Jun Kim

IPC分类号： G02B5/20 ,  H01L27/146 ,  H04N9/04

摘要： An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.

公开(公告)号：US08736009B2

公开(公告)日：2014-05-27

申请号：US13837356

申请日：2013-03-15

申请人： Byung Jun Park ,  Yong Woo Lee ,  Chang Rok Moon

发明人： Byung Jun Park ,  Yong Woo Lee ,  Chang Rok Moon

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L31/18 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.

摘要翻译： 图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一 金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

公开(公告)号：US20130221465A1

公开(公告)日：2013-08-29

申请号：US13599960

申请日：2012-08-30

申请人： Sang-Hoon KIM ,  Chang-Rok MOON

发明人： Sang-Hoon KIM ,  Chang-Rok MOON

IPC分类号： H01L31/0232

CPC分类号： H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

摘要： Image sensors include a first insulation interlayer structure on a first surface of a substrate and having a multi-layered structure. A first wiring structure is in the first insulation interlayer structure. A via contact plug extends from a second surface of the substrate and penetrates the substrate to be electrically connected to the first wiring structure. Color filters and micro lenses are stacked on the second surface in a first region of the substrate. A second insulation interlayer structure is on the second surface in a second region of the substrate. A second wiring structure is in the second insulation interlayer structure to be electrically connected to the via contact plug. A pad pattern is electrically connected to the second wiring structure and having an upper surface through which an external electrical signal is applied. Photodiodes are between the first and second wiring structures in the first region.

摘要翻译： 图像传感器包括在基板的第一表面上的具有多层结构的第一绝缘夹层结构。 第一布线结构处于第一绝缘夹层结构中。 通孔接触插塞从基板的第二表面延伸并穿透基板以电连接到第一布线结构。 彩色滤光器和微透镜在衬底的第一区域中的第二表面上堆叠。 第二绝缘层间结构位于衬底的第二区域中的第二表面上。 第二布线结构在第二绝缘层间结构中，以电连接到通孔接触插塞。 焊盘图案电连接到第二布线结构，并且具有施加外部电信号的上表面。 光电二极管位于第一区域中的第一和第二布线结构之间。