公开(公告)号：US20090008638A1

公开(公告)日：2009-01-08

申请号：US12078706

申请日：2008-04-03

Applicant: Dong-hun Kang ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Eun-ha Lee ,  Jae-cheol Lee

Inventor： Dong-hun Kang ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Eun-ha Lee ,  Jae-cheol Lee

IPC: H01L29/12 ,  H01L21/336

CPC classification number: H01L29/7869

Abstract: Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof.

Abstract translation: 示例性实施例涉及包括氧化锌（ZnO），包括由氧化物半导体形成的沟道的薄膜晶体管的氧化物半导体和制造薄膜晶体管的方法。 氧化物半导体可以包括GaxInyZnz氧化物和选自由4A族元素，4A族氧化物，稀土元素及其组合组成的组中的至少一种材料。

公开(公告)号：US20070246784A1

公开(公告)日：2007-10-25

申请号：US11212582

申请日：2005-08-29

Applicant: Dong-hun Kang ,  Noe-jung Park ,  Wan-jun Park

Inventor： Dong-hun Kang ,  Noe-jung Park ,  Wan-jun Park

IPC: H01L29/76

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1033 ,  H01L51/0048 ,  H01L51/0558

Abstract: An ambipolar nanotube field effect transistor is converted to a unipolar nanotube field effect transistor by providing a carrier-trapping material such as oxygen molecules for the nanotube such as by adsorption or by providing a layer of material containing the carrier-trapping material adjacent to the nanotube.

Abstract translation: 通过为纳米管提供诸如氧分子的载流子捕获材料，例如通过吸附或者通过提供包含与纳米管相邻的载流子俘获材料的材料层，将双极纳米管场效应晶体管转换为单极纳米管场效应晶体管 。

公开(公告)号：US20060091440A1

公开(公告)日：2006-05-04

申请号：US11221864

申请日：2005-09-09

Applicant: Noe-jung Park ,  Kwang-hee Kim ,  Dong-hun Kang ,  Jae-woong Hyun ,  Ki-ha Hong

Inventor： Noe-jung Park ,  Kwang-hee Kim ,  Dong-hun Kang ,  Jae-woong Hyun ,  Ki-ha Hong

IPC: H01L29/94

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0051 ,  H01L51/0512 ,  H01L51/052 ,  H01L51/0525 ,  Y10S977/742

Abstract: Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.

Abstract translation: 提供了包含分子吸附层的记忆装置。 存储器件包括：衬底; 源电极和漏电极，形成在基板上并彼此分离; 电连接到源电极和漏电极的碳纳米管（CNT）层; 与CNT接触以存储来自CNT的电荷的存储单元; 以及形成在所述存储单元上的栅电极，其中所述存储单元包括：形成在所述CNT上的第一绝缘层; 分子吸附层，其形成在第一绝缘层上并用作电荷存储层; 以及形成在分子吸附层上的第二绝缘层。

公开(公告)号：USD458163S1

公开(公告)日：2002-06-04

申请号：US29142558

申请日：2001-05-29

Applicant: Dong-Hun Kang

Designer： Dong-Hun Kang

公开(公告)号：USD396816S

公开(公告)日：1998-08-11

申请号：US78340

申请日：1997-10-21

Applicant: Dong-hun Kang

Designer： Dong-hun Kang

公开(公告)号：US08735882B2

公开(公告)日：2014-05-27

申请号：US12929323

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z和nlE;约3.15和约0.55≤n1E; y / z＆ 约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US08429830B2

公开(公告)日：2013-04-30

申请号：US13489763

申请日：2012-06-06

Applicant: Dong Hun Kang

Inventor： Dong Hun Kang

IPC: G01B3/10

CPC classification number: G01B3/1005 ,  G01B2003/102

Abstract: Disclosed herein is a tape measure with a self-regulating speed control mechanism. In the present invention, when a bobbin rotates, a rubber roller rotatably provided on a movable mounting plate alternately comes into contact with an inner surface of a support ring and a rubber acceleration prevention member provided on the inner surface of the support ring, so that the speed of the bobbin can be smoothly and reliably reduced.

Abstract translation: 这里公开了具有自调节速度控制机构的卷尺。 在本发明中，当筒管旋转时，可旋转地设置在可移动安装板上的橡胶辊与支撑环的内表面和设置在支撑环的内表面上的橡胶加速度防止件交替地接触，使得 筒管的速度可以平稳可靠地降低。

公开(公告)号：US08415882B2

公开(公告)日：2013-04-09

申请号：US13049795

申请日：2011-03-16

Applicant: Dong-Hun Kang ,  Min-Chul Suh ,  Dong-Won Han ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Hyo-Jin Kim

Inventor： Dong-Hun Kang ,  Min-Chul Suh ,  Dong-Won Han ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Hyo-Jin Kim

IPC: H05B33/00

CPC classification number: H01L51/56 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/5253

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on the driving circuit and organic light emitting diode and v) a spacer formed on the substrate and surrounding the encapsulation thin film.

Abstract translation: 公开了一种有机发光二极管（OLED）显示器。 在一个实施例中，显示器包括i）衬底，ii）形成在衬底上的驱动电路，iii）形成在衬底上并电连接到驱动电路的有机发光二极管，iv）形成在衬底上的封装薄膜 驱动电路和有机发光二极管，以及v）形成在衬底上并围绕封装薄膜的间隔物。

公开(公告)号：US08324628B2

公开(公告)日：2012-12-04

申请号：US12073102

申请日：2008-02-29

Applicant: Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

Inventor： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L29/7869

Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Abstract translation: 提供了一种用于薄膜晶体管的沟道层，薄膜晶体管及其形成方法。 用于薄膜晶体管的沟道层可以包括掺杂有过渡金属的IZO（氧化铟锌）。 薄膜晶体管可以包括栅电极和形成在衬底上的沟道层，形成在栅极和沟道层之间的栅极绝缘层，以及与沟道层的端部接触的源电极和漏电极。

公开(公告)号：US08106583B2

公开(公告)日：2012-01-31

申请号：US12461296

申请日：2009-08-06

Applicant: Dae-Bum Shin ,  Min-Chul Suh ,  Dong-Won Han ,  Dong-Kyu Lee ,  Jin-Ho Kwack ,  Dong-Hun Kang ,  Hyo-Jin Kim

Inventor： Dae-Bum Shin ,  Min-Chul Suh ,  Dong-Won Han ,  Dong-Kyu Lee ,  Jin-Ho Kwack ,  Dong-Hun Kang ,  Hyo-Jin Kim

IPC: H01J1/62

CPC classification number: H01L51/5253 ,  G02B5/201 ,  H01L27/322 ,  H01L51/5284

Abstract: Provided is an organic light emitting display apparatus in which process efficiency and contrast are increased. The organic light emitting display apparatus includes a substrate, a display unit that is formed on the substrate and includes an organic light emitting device, an encapsulation layer that is formed on the display unit so as to encapsulate the display unit, a color filter layer that is formed on the encapsulation layer, a protection layer that is formed on the color filter layer, and a black matrix that is formed on the protection layer. The black matrix is aligned not to overlap the color filter layer.

Abstract translation: 提供了一种其中提高了处理效率和对比度的有机发光显示装置。 有机发光显示装置包括基板，形成在基板上并包括有机发光器件的显示单元，形成在显示单元上以封装显示单元的封装层，滤色器层， 形成在封装层上，形成在滤色器层上的保护层和形成在保护层上的黑矩阵。 黑矩阵排列成不与滤色层重叠。