Abstract:
A Raman optical amplifier includes a fiber amplifier for Raman-amplifying an input optical signal to form a primarily-amplified optical signal, and a semiconductor optical amplifier for outputting a Raman pumping light of a predetermined wavelength adapted to Raman-pump the fiber amplifier, while amplifying the primarily-amplified optical signal to form a secondarily-amplified optical signal. A circulator allows the fiber and semiconductor amplifiers to communicate the lights and signals and operates with fiber grating, which acts as a filter, to output the secondarily-amplified optical signal
Abstract:
A semiconductor optical amplifier for amplifying input optical signals is disclosed. The optical amplifier includes a substrate; a first active layer laminated on the substrate for generating pumping lights; a second active layer laminated on the substrate being gain-clamped by the pumping light and amplifying the input optical signals; and a grating formed on an upper portion of the substrate, adjacent to a boundary between the first active layer and the second active layer, for partially allowing the transmission of the pumping lights to the second active layer and partially reflecting the pumping lights.
Abstract:
A passive optical network using downstream and upstream optical signals for achieving a two-way communication is provided, wherein the downstream and upstream optical signals have different polarization components and an equal wavelength band.
Abstract:
Disclosed is a gain-clamped semiconductor optical amplifier including a semiconductor optical amplifier for amplifying an inputted optical signal and outputting amplified spontaneous emission light, the amplified spontaneous emission light consisting of a first portion and a second portion, the first portion having a wavelength range to be amplified and a wavelength selective reflector for allowing the first portion of the amplified spontaneous emission light to pass through the wavelength selective reflector and reflecting the second portion of the amplified spontaneous emission light again to the semiconductor optical amplifier, thereby clamping the gain of the semiconductor optical amplifier.
Abstract:
Disclosed are a broadband light source and a broadband optical module using the broadband light source. The broadband light source includes a substrate, a plurality of waveguides including active layers for generating light of mutually differing wavelength bands, and formed on the substrate in order to extend from a first end to a second end of the broadband light source, a plurality of trenches located between waveguides in order to electrically and optically insulate the waveguides from each other, and a plurality of electrode devices for operating each of the waveguides.
Abstract:
A gain-clamped semiconductor optical amplifier is disclosed. The amplifier includes a gain waveguide for amplifying an optical signal input to the gain waveguide, and a grating layer, in contact with the gain waveguide, having a first grating disposed at a first end portion.
Abstract:
A broad-band light source using a semiconductor optical amplifier is provided. The broad-band light source includes the semiconductor optical amplifier including an active layer serving as a gain area, an under-cladding layer, an over-cladding layer, and antireflection layers formed at both ends of the active layer; and a reflector, located at the outside of the semiconductor optical amplifier, for reflecting light outputted from the semiconductor optical amplifier so that the reflected light is inputted back to the active layer so as to minimize gain ripple of the semiconductor optical amplifier.
Abstract:
An optical module comprises a waveguide, at least one optical transducer positioned on the waveguide for transducing an optical signal into an electric signal or an electric signal into an optical signal and a connection socket seated on the waveguide, the optical transducer being mounted in the connection socket.
Abstract:
A multi-wavelength light source includes a substrate, a fabry-perot laser laminated on the substrate that is operated by driving current below a predetermined threshold current to generate multi-wavelength light including a plurality of peaks whose wavelengths and spacing are identical to these of WDM channels. A semiconductor optical amplifier (SOA) is laminated on the substrate in an arrangement such that a slant surface of the SOA is opposed to a side surface of the fabry-perot laser, which serves to thereby amplify the multi-wavelength light output from the fabry-perot laser. The semiconductor optical amplifier is driven in a gain saturation state to reduce the relative intensity of noise in the channels of the multi-wavelength light that are simultaneously amplified.
Abstract:
A gain-clamped semiconductor optical amplifier uses the Raman amplification principle. A Raman amplifier and a gain clamped semiconductor optical amplifier are integrated onto an optical amplifier module. The gain-clamped semiconductor optical amplifier includes: an optical fiber having Raman gain characteristics; and a gain-clamped semiconductor optical amplifier for providing a pumping light to the optical fiber by laser oscillation using a distributed Bragg reflector (DBR) lattice. The DBR has input and output terminals asymmetrical to each other, at least for amplifying a signal light Raman-amplified by the optical fiber.