公开(公告)号：US20120080604A1

公开(公告)日：2012-04-05

申请号：US12957852

申请日：2010-12-01

Applicant: Jung-Seok KIM ,  Byung-Hun KO ,  Beom-Jin MOON ,  Jung-Kee YOON

Inventor： Jung-Seok KIM ,  Byung-Hun KO ,  Beom-Jin MOON ,  Jung-Kee YOON

IPC: H01L27/146 ,  G01T1/24

CPC classification number: H01L27/14634 ,  G01T1/246 ,  H01L27/14676 ,  H01L27/14692

Abstract: An apparatus and method for detecting radiation are provided. The apparatus includes an upper electrode layer transmitting radiation; a first insulating layer blocking charges from the upper electrode layer; a photoconductive layer becoming photoconductive upon exposure to the radiation; a second insulating layer protecting the photoconductive layer from a plasma discharge; a lower substrate facing the second insulating layer; a plurality of barrier ribs defining a cell structure between the second insulating layer and the lower substrate; a gas layer included in an inner chamber inside the cell structure and generating a plasma discharge; a bottom electrode formed on the lower substrate; a first radio frequency (RF) electrode formed over the bottom electrode and connected to a ground source; a second RF electrode to which RF power for generating plasma is applied; and a third insulating layer surrounding the first and second RF electrodes and thus insulating the first and second RF electrodes from the gas layer and the bottom electrode.

Abstract translation: 提供了一种用于检测辐射的装置和方法。 该装置包括发射辐射的上电极层; 从上部电极层阻挡电荷的第一绝缘层; 光电导层在暴露于辐射时变得光电导; 保护光电导层免受等离子体放电的第二绝缘层; 面向所述第二绝缘层的下基板; 多个阻挡肋，限定所述第二绝缘层和所述下基板之间的电池结构; 包括在所述电池结构内的内室中并产生等离子体放电的气体层; 形成在下基板上的底电极; 形成在所述底部电极上并连接到地源的第一射频（RF）电极; 施加用于产生等离子体的RF功率的第二RF电极; 以及围绕第一和第二RF电极并因此使第一和第二RF电极与气体层和底部电极绝缘的第三绝缘层。

公开(公告)号：US20120043666A1

公开(公告)日：2012-02-23

申请号：US13287317

申请日：2011-11-02

Applicant: Byung-Lyul Park ,  Gil-Heyun Choi ,  Suk-Chul Bang ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Deok-Young Jung

Inventor： Byung-Lyul Park ,  Gil-Heyun Choi ,  Suk-Chul Bang ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Deok-Young Jung

IPC: H01L23/48

CPC classification number: H01L21/76898 ,  H01L21/76801 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541

Abstract: For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.

Abstract translation: 为了形成半导体器件，通过至少一个电介质层和至少一部分衬底形成通孔结构。 此外，在通孔结构上形成保护缓冲层。 此外，在形成通孔结构和保护缓冲层之后，在衬底上形成用于集成电路的导电结构，其中导电结构不在过孔结构上形成。 因此，导电和通孔结构的劣化被最小化。

公开(公告)号：US20120014236A1

公开(公告)日：2012-01-19

申请号：US13244660

申请日：2011-09-25

Applicant: Seong-jin Moon ,  Young-nam Oh ,  Tae-yun Chung ,  Jung-suk Kang ,  Pan-gie Park

Inventor： Seong-jin Moon ,  Young-nam Oh ,  Tae-yun Chung ,  Jung-suk Kang ,  Pan-gie Park

IPC: G11B7/007

CPC classification number: G11B27/034 ,  G11B19/12 ,  G11B19/122 ,  G11B20/00086 ,  G11B20/1217 ,  G11B27/036 ,  G11B27/322 ,  G11B27/326 ,  G11B27/329 ,  G11B27/36 ,  G11B2020/1265 ,  G11B2020/1287 ,  G11B2220/20 ,  G11B2220/2537 ,  H04N5/76 ,  H04N5/781 ,  H04N5/85 ,  H04N5/9201 ,  H04N9/8205

Abstract: A recording medium and a recording apparatus for storing manufacturer information for supporting specific functions for each manufacturer and a method therefor. A reproducing apparatus for reproducing manufacturer information for supporting specific functions and a method therefor is also provided. If a recording apparatus modifies the contents of the recording medium, then it should record its manufacturer's identification code. A recording apparatus/reproducing apparatus should check the identification code on the recording medium before using its own manufacture information item for some specific function. Also, it is possible to reduce the time required to determine whether the manufacturer information items are effective.

公开(公告)号：US20120002942A1

公开(公告)日：2012-01-05

申请号：US13229316

申请日：2011-09-09

Applicant: Kil-soo JUNG ,  Seong-jin Moon ,  Sung-wook Park

Inventor： Kil-soo JUNG ,  Seong-jin Moon ,  Sung-wook Park

IPC: H04N9/80

CPC classification number: G11B20/10527 ,  G11B27/10 ,  G11B2020/10546 ,  G11B2020/10944 ,  G11B2220/2562 ,  H04N21/2368 ,  H04N21/4307 ,  H04N21/4325 ,  H04N21/4341 ,  H04N21/8153

Abstract: A decoding apparatus and method for producing a browsable slide show and a data storage medium therefor. The decoding apparatus having a mainstream decoder, which decodes mainstream packet data including image data to be reproduced in a browsable slide show; a sub-audio decoder, which decodes sub-audio packet data including audio data attached to the image data; a mainstream system time clock (STC) counter, which provides an STC sequence for controlling the decoding time of the mainstream packet data to the mainstream decoder; and a sub-audio STC counter, which provides an STC sequence for controlling the decoding time of the sub-audio packet data to the sub-audio decoder. Accordingly, it is possible to seamlessly reproduce sub-audio data even when a user selects a forward or reverse play in the middle of reproducing still image data with the sub-audio data attached thereto in a browsable slide show.

Abstract translation: 一种用于制造可浏览幻灯片的解码装置和方法及其数据存储介质。 解码装置具有主流解码器，其解码包括可浏览幻灯片放映中要再现的图像数据的主流分组数据; 子音频解码器，其对包括附加到图像数据的音频数据的子音频分组数据进行解码; 主流系统时钟（STC）计数器，其提供用于将主流分组数据的解码时间控制到主流解码器的STC序列; 以及子音频STC计数器，其提供用于控制子音频分组数据到子音频解码器的解码时间的STC序列。 因此，即使当用户在可浏览的幻灯片放映中附加有副音频数据的静止图像数据的再现中选择正向或反向播放时，也可以无缝地再现子音频数据。

公开(公告)号：US20110318922A1

公开(公告)日：2011-12-29

申请号：US13167225

申请日：2011-06-23

Applicant: Deok-young Jung ,  Gil-heyun Choi ,  Suk-chul Bang ,  Byung-lyul Park ,  Kwang-jin Moon ,  Dong-chan Lim

Inventor： Deok-young Jung ,  Gil-heyun Choi ,  Suk-chul Bang ,  Byung-lyul Park ,  Kwang-jin Moon ,  Dong-chan Lim

IPC: H01L21/283

CPC classification number: H01L21/76802 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/76898

Abstract: The methods include forming a semiconductor substrate pattern by etching a semiconductor substrate. The semiconductor pattern has a first via hole that exposes side walls of the semiconductor substrate pattern, and the side walls of the semiconductor substrate pattern exposed by the first via hole have an impurity layer pattern. The methods further include treating upper surfaces of the semiconductor substrate pattern, the treated upper surfaces of the semiconductor substrate pattern being hydrophobic; removing the impurity layer pattern from the side walls of the semiconductor substrate pattern exposed by the first via hole; forming a first insulating layer pattern on the side walls of the semiconductor substrate pattern exposed by the first via hole; and filling a first conductive layer pattern into the first via hole and over the first insulating layer pattern.

Abstract translation: 所述方法包括通过蚀刻半导体衬底形成半导体衬底图案。 半导体图案具有暴露半导体衬底图案的侧壁的第一通孔，并且由第一通孔露出的半导体衬底图案的侧壁具有杂质层图案。 所述方法还包括处理半导体衬底图案的上表面，所处理的半导体衬底图案的上表面是疏水的; 从由第一通孔露出的半导体衬底图案的侧壁去除杂质层图案; 在由第一通孔露出的半导体衬底图案的侧壁上形成第一绝缘层图案; 以及将第一导电层图案填充到第一通孔中并在第一绝缘层图案之上。

公开(公告)号：US08076234B1

公开(公告)日：2011-12-13

申请号：US12913753

申请日：2010-10-27

Applicant: Byung-Lyul Park ,  Gil-Heyun Choi ,  Suk-Chul Bang ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Deok-Young Jung

Inventor： Byung-Lyul Park ,  Gil-Heyun Choi ,  Suk-Chul Bang ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Deok-Young Jung

IPC: H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76898 ,  H01L21/76801 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541

Abstract: For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.

Abstract translation: 为了形成半导体器件，通过至少一个电介质层和至少一部分衬底形成通孔结构。 此外，在通孔结构上形成保护缓冲层。 此外，在形成通孔结构和保护缓冲层之后，在衬底上形成用于集成电路的导电结构，其中导电结构不在过孔结构上形成。 因此，导电和通孔结构的劣化被最小化。

公开(公告)号：US07962015B2

公开(公告)日：2011-06-14

申请号：US10647445

申请日：2003-08-26

Applicant: Kil-soo Jung ,  Hyun-kwon Chung ,  Sung-wook Park ,  Seong-jin Moon ,  Jung-kwon Heo

Inventor： Kil-soo Jung ,  Hyun-kwon Chung ,  Sung-wook Park ,  Seong-jin Moon ,  Jung-kwon Heo

IPC: H04N5/917

CPC classification number: G11B27/105 ,  G11B27/34 ,  G11B2220/2562 ,  H04N5/4403 ,  H04N5/775 ,  H04N5/85 ,  H04N9/8205 ,  H04N21/4221 ,  H04N21/42646 ,  H04N21/4312 ,  H04N21/4325 ,  H04N21/4348 ,  H04N21/435 ,  H04N21/4431 ,  H04N21/4438 ,  H04N21/4622 ,  H04N21/8543

Abstract: An apparatus reproduces AV data in an interactive mode, a method handles a user input, and an information storage medium stores information therefor. The information storage medium includes AV data and a markup document utilized to reproduce the AV data in an interactive mode. The markup document includes first event information of an occurrence of a key input event corresponding to a user action to inform, by default, an AV playback engine, which plays back the AV data. Accordingly, interactive contents may be controlled using a limited user input device.

Abstract translation: 一种装置以交互模式再现AV数据，一种方法处理用户输入，并且信息存储介质存储有关信息。 信息存储介质包括AV数据和用于以交互模式再现AV数据的标记文档。 标记文档包括与用户动作相对应的键输入事件的发生的第一事件信息，以默认地通知AV重放引擎，AV重放引擎回放AV数据。 因此，可以使用有限的用户输入装置来控制交互式内容。

公开(公告)号：US20110130566A1

公开(公告)日：2011-06-02

申请号：US13055939

申请日：2009-07-28

Applicant: Ung Chan Yoon ,  Myung Ho Hyun ,  Hong-Seok Kim ,  Sang-Jin Moon ,  Won Suk Shin ,  Young In Kim ,  Ok-Sang Jung

Inventor： Ung Chan Yoon ,  Myung Ho Hyun ,  Hong-Seok Kim ,  Sang-Jin Moon ,  Won Suk Shin ,  Young In Kim ,  Ok-Sang Jung

IPC: C07D471/06

CPC classification number: C07D409/14 ,  H01L51/0053 ,  H01L51/0068 ,  H01L51/42 ,  Y02E10/549

Abstract: The compounds of the present invention are represented by the following formula (I): wherein M is represented by the following formula: with R1, R2, R3, R4, R5, R6, R7, R8, R10, R11, X1, X2, X3, L, a, b, c, d, e, x, y, and z defined herein.

Abstract translation: 本发明化合物由下式（I）表示：其中M由下式表示：其中R1，R2，R3，R4，R5，R6，R7，R8，R10，R11，X1，X2， X3，L，a，b，c，d，e，x，y和z。

公开(公告)号：US07923358B2

公开(公告)日：2011-04-12

申请号：US12603072

申请日：2009-10-21

Applicant: Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi ,  Sang Jin Moon

Inventor： Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi ,  Sang Jin Moon

IPC: C23C16/24

CPC classification number: C23C16/4581 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/2913

Abstract: The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means is constituted by forming one or a plurality of separation layer(s) on the surface of a metallic core element and is connected to an electrode means; heating the core means by supplying electricity through the electrode means; and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. According to the present invention, the deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared in a more economic and convenient way.

Abstract translation: 本发明涉及一种使用金属芯装置制备多晶硅棒的方法，包括：在用于制备硅棒的沉积反应器的内部空间中安装芯装置，其中芯装置通过形成一个或一个 金属芯体表面上的多个分离层连接到电极装置; 通过电极装置供电来加热芯装置; 并将反应气体供给到用于硅沉积的内部空间中，从而在芯装置的表面上沿向外的方向形成沉积输出。 根据本发明，沉积输出和芯装置可以容易地从通过硅沉积过程获得的硅棒输出分离，并且可以最小化由金属芯元件的杂质引起的沉积输出的污染，由此 可以以更经济和便利的方式制备高纯度硅。

公开(公告)号：US20110062342A1

公开(公告)日：2011-03-17

申请号：US12991863

申请日：2009-05-07

Applicant: Sang-il Lee ,  Beom-jin Moon ,  Jung-kee Yoon

Inventor： Sang-il Lee ,  Beom-jin Moon ,  Jung-kee Yoon

IPC: G01T1/24

CPC classification number: A61B6/56 ,  A61B6/4208 ,  A61B6/4233 ,  A61B2560/045

Abstract: Provided are a high-voltage power supply apparatus and method for supplying high-voltage power to a digital flat panel X-ray detector to accelerate the separation of charges ionized upon the irradiation of the digital flat panel X-ray detector with X-rays. The high-voltage power supply apparatus includes a power source outputting high-voltage power; a path determiner providing a supply path for supplying the high-voltage power to the digital flat panel X-ray detector and a short-circuit path for short-circuiting the high-voltage power; and a path controller determining the supply path and the short-circuit path. Therefore, it is possible to prevent an overshoot of the waveform of the high-voltage power. In addition, it is possible to improve the uniformity of a radiation image and reduce the time taken to obtain a radiation image by quickly discharging charges when the high-voltage power is short-circuited.

Abstract translation: 提供了一种用于向数字平板X射线检测器提供高压电力以加速用X射线照射数字平板X射线检测器时电离的电荷分离的高压电源装置和方法。 高电压电源装置包括输出高压电力的电源; 路径确定器，其向数字平板X射线检测器提供用于提供高压电力的供给路径和用于使高压电力短路的短路路径; 以及路径控制器，确定供给路径和短路路径。 因此，可以防止高压电力波形的过冲。 此外，可以提高放射线图像的均匀性，并且当高压电力短路时，通过快速放电来减少获得放射线图像所花费的时间。