Abstract:
Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.
Abstract:
The present invention provides a stacked organic light emitting device, comprising a first conductive layer, at least one intermediate conductive layer and a second conductive layer, and light emitting units disposed between the conductive layers, wherein at least two non-neighboring conductive layers among the conductive layers are conductive layers belonging to Group 1 such that they are electrically connected with each other to a common potential; at least one non-neighboring conductive layer among the conductive layers which are not electrically connected with the conductive layers belonging to Group 1 to a common potential are conductive layers belonging to Group 2 such that they are electrically connected with each other to a common potential; and the conductive layers belonging to Group 1 and the conductive layers belonging to Group 2 are connected with each other via a voltage regulator for alternately applying a positive voltage and a negative voltage.
Abstract:
The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method.
Abstract:
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
Abstract:
Disclosed is a method of manufacturing an organic light emitting device, an organic light emitting device manufactured by using the method, and an electronic device including the organic light emitting device. The method includes (a) forming an insulating layer on a lower electrode, (b) etching the insulating layer to form an opening ranging from an upper surface of the insulating layer to the lower electrode so that an overhang structure having a lowermost circumference that is larger than an uppermost circumference is formed, (c) forming a conductive layer on an upper surface of the lower electrode in the opening and a surface of the insulating layer other than the overhang structure, (d) forming an organic material layer on the conductive layer formed on the upper surface of the lower electrode in the opening, and (e) forming an upper electrode on an upper surface of the conductive layer disposed on the upper surface of the insulating layer and an upper surface of the organic material layer.
Abstract:
The present invention provides an organic light emitting device that comprises a substrate, a first electrode, two or more organic material layers, and a second electrode sequentially layered, wherein the organic material layers include a light emitting layer, and among the organic material layers, the organic material layer that is contacted with the second electrode includes metal oxide, and a method for manufacturing the same.
Abstract:
The present invention provides an organic light emitting device in which a layer having a refractive index in the range of 1.3 to 3 is further formed on an upper electrode of at least one region of regions through which rays having red, green, and blue colors are passed and a method of manufacturing the organic light emitting device. An optical length that can cause the microcavity effect according to the type of color of emitted light is controlled by using the layer to manufacture the organic light emitting device having high light emitting efficiency.
Abstract:
The present invention relates to a method for producing an organic light emitting device, comprising a step of sequentially forming on a substrate a first electrode formed of a metal, one or more organic material layers including a light emitting layer, and a second electrode, which comprises a step of forming a layer on the first electrode using a metal having the higher oxidation rate than the first electrode before forming the organic material layer, and to an organic light emitting device produced by the same.
Abstract:
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M'Oy) or amorphous metal oxynitride (M'OyNz).
Abstract:
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).