公开(公告)号：US20120160814A1

公开(公告)日：2012-06-28

申请号：US12980131

申请日：2010-12-28

申请人： Yasu Osako ,  Kelly J. Bruland ,  Andrew Hooper ,  Jim Dumestre ,  David Lord

发明人： Yasu Osako ,  Kelly J. Bruland ,  Andrew Hooper ,  Jim Dumestre ,  David Lord

IPC分类号： B23K26/00

CPC分类号： B23K26/364 ,  B23K26/0624 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50

摘要： Systems and methods ablate electrically conductive links using laser pulses with optimized temporal power profiles and/or polarizations. In certain embodiments, the polarization property of a laser beam is set such that coupling between the laser beam and an electrically conductive link reduces the pulse energy required to ablate the electrically conductive link. In one such embodiment, the polarization is selected based on a depth of a target link structure. In another embodiment, the polarization changes as deeper material is removed from a target location. In addition, or in other embodiments, a first portion of a temporal power profile of a laser beam includes a rapid rise time to heat an upper portion of an electrically conductive link so as to form cracks in a passivation layer over upper corners of the electrically conductive link, without forming cracks at lower corners of the electrically conductive link.

摘要翻译： 系统和方法使用具有优化的时间功率分布和/或偏振的激光脉冲消融导电链路。 在某些实施例中，激光束的偏振特性被设定为使得激光束和导电链节之间的耦合降低了烧蚀导电连接所需的脉冲能量。 在一个这样的实施例中，基于目标链路结构的深度来选择极化。 在另一个实施例中，当从目标位置移除较深的材料时，偏振改变。 另外或在其他实施例中，激光束的时间功率分布的第一部分包括加热导电连接件的上部的快速上升时间，以便在电气的上角上的钝化层中形成裂纹 导电连接件，而不会在导电连接件的下角形成裂纹。

公开(公告)号：US20100133651A1

公开(公告)日：2010-06-03

申请号：US12629762

申请日：2009-12-02

申请人： Kelly J. Bruland

发明人： Kelly J. Bruland

IPC分类号： H01L23/525 ,  H01L21/66 ,  H01L21/268

CPC分类号： H01L23/5258 ,  B23K26/0344 ,  B23K26/0622 ,  B23K26/082 ,  G11C17/14 ,  G11C17/143 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is used in processing structures on or within a semiconductor substrate using N series of laser pulses to obtain a throughput benefit, wherein N≧2. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected structures in N respective distinct rows. The method determines a joint velocity profile for simultaneously moving in the lengthwise direction the N laser beam axes substantially in unison relative to the semiconductor substrate so as to process structures in the N rows with the respective N series of laser pulses, whereby the joint velocity profile is such that the throughput benefit is achieved while ensuring that the joint velocity profile represents feasible velocities for each of the N series of laser pulses and for each of the respective N rows of structures processed with the N series of laser pulses. A semiconductor substrate is designed to have a structure layout that takes advantage of the N-fold processing parallelism provided by the N laser beams.

摘要翻译： 使用N系列激光脉冲在半导体衬底上或半导体衬底内的处理结构中使用一种方法来获得生产效率，其中N≥2。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 N系列激光脉冲沿着N个相应的光束轴传播，直到在N个相应的不同行中的选定结构上入射。 该方法确定了相对于半导体衬底基本上一致地使N个激光束轴沿长度方向同时移动的关节速度分布图，以便利用相应的N系列激光脉冲处理N行中的结构，从而将关节速度分布 使得在确保联合速度分布表示对于N系列激光脉冲中的每一个以及用N系列激光脉冲处理的各个N行结构中的每一个的可行速度的同时，实现了吞吐量益处。 半导体衬底被设计成具有利用由N个激光束提供的N倍处理平行度的结构布局。

公开(公告)号：US20100089881A1

公开(公告)日：2010-04-15

申请号：US12638685

申请日：2009-12-15

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo

IPC分类号： B23K26/06 ,  B23K26/08 ,  B23K26/36

CPC分类号： B23K26/067 ,  B23K26/0613 ,  H01L21/76894

摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.

摘要翻译： 方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。 该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。 第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构 或在与第一行不同的第二行上的两个相邻结构之间。 所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构， 并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

公开(公告)号：US20090242522A1

公开(公告)日：2009-10-01

申请号：US12235294

申请日：2008-09-22

申请人： Brian W. Baird ,  Kelly J. Bruland ,  Robert Hainsey

发明人： Brian W. Baird ,  Kelly J. Bruland ,  Robert Hainsey

IPC分类号： B23K26/00

CPC分类号： B23K26/03

摘要： A laser processing system includes a beam positioning system to align beam delivery coordinates relative to a workpiece. The beam positioning system generates position data corresponding to the alignment. The system also includes a pulsed laser source and a beamlet generation module to receive a laser pulse from the pulsed laser source. The beamlet generation module generates a beamlet array from the laser pulse. The beamlet array includes a plurality of beamlet pulses. The system further includes a beamlet modulator to selectively modulate the amplitude of each beamlet pulse in the beamlet array, and beamlet delivery optics to focus the modulated beamlet array onto one or more targets at locations on the workpiece corresponding to the position data.

摘要翻译： 激光处理系统包括用于使输送坐标相对于工件对准的光束定位系统。 光束定位系统产生对准的位置数据。 该系统还包括脉冲激光源和子束产生模块，以从脉冲激光源接收激光脉冲。 子波束生成模块从激光脉冲生成小波阵列。 子束阵列包括多个子束脉冲。 该系统还包括一个子束调制器，用于选择性地调制子束阵列中的每个子束脉冲的振幅，以及子束传递光学器件，用于将调制的子束阵列聚焦到与位置数据对应的工件上的位置上的一个或多个目标上。

公开(公告)号：US20090011614A1

公开(公告)日：2009-01-08

申请号：US12210955

申请日：2008-09-15

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

IPC分类号： H01L21/268 ,  B23K26/08

CPC分类号： B23K26/067 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/0676 ,  B23K26/0853 ,  B23K2101/40 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  H01L21/76894 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.

摘要翻译： 方法和系统使用多个激光束选择性地照射半导体晶片上或其中的结构。 结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。 这些结构被排列成行，并且可以以轴上模式或横轴模式进行处理。 在轴上模式下，光束点落在同一行的结构上，因为它们沿着行移动。 在横轴模式下，当束沿着行移动时，束斑落在不同行中的结构上。

公开(公告)号：US20080314879A1

公开(公告)日：2008-12-25

申请号：US11768048

申请日：2007-06-25

申请人： Kelly J. Bruland ,  Clint Vandergiessen ,  Duane Eitzen

发明人： Kelly J. Bruland ,  Clint Vandergiessen ,  Duane Eitzen

IPC分类号： B23K26/04

CPC分类号： B23K26/0853 ,  B23K26/042 ,  B23K26/082 ,  B23K26/351 ,  B23K2101/40 ,  G11C17/143 ,  G11C29/006 ,  G11C29/028 ,  G11C29/56 ,  H01L21/76894

摘要： Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.

摘要翻译： 系统和方法自动修改基于激光的系统，以处理目标样品，如半导体晶圆。 在一个实施例中，基于激光的系统检测与处理模型相关联的触发。 处理模型对应于一组晶片。 响应于触发，系统根据处理模型自动调整一个或多个系统参数。 然后，系统使用修改的系统参数来选择性地照射在该组晶片中的至少一个晶片上或其内的结构。 在一个实施例中，触发器包括与运动级相关的热状态的变化。 响应于热状态的变化，系统以一系列运动运行运动阶段，直到达到热平衡阈值。 运动顺序可以例如模拟用于处理特定晶片的运动。

公开(公告)号：US07435927B2

公开(公告)日：2008-10-14

申请号：US11051265

申请日：2005-02-04

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen

IPC分类号： B23K26/38 ,  B23K26/067

CPC分类号： H01L23/5258 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/082 ,  G11C17/14 ,  G11C17/143 ,  H01L2924/0002 ,  H01L2924/00

摘要： Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

摘要翻译： 多个激光束选择性地照射半导体衬底上或内部的导电结构。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 一种方法沿着相应的第一和第二传播路径传播第一和第二传播路径，其中在相应的给定时间，半导体衬底上或第二位置处的相应的第一和第二轴入射到相应的第一和第二位置处。 第一和第二位置在它们各自的行中的结构上或它们各自的行中的两个相邻结构之间，这是不同的。 第二位置在行的长度方向上偏离第一位置一定量。 该方法使激光束轴相对于半导体衬底在行的长度方向上基本一致地移动，以便用激光束选择性地照射行中的结构。