Abstract:
Provided are a tunable demultiplexer and a tunable laser, having an optical deflector in which a refractive index of a core layer of a deflection pattern region having a predetermined shape varies in response to an external electrical signal so that the optical deflector deflects incident light in the radial direction.
Abstract:
Filter-free wavelength converters for separating and rejecting an optical input signal. A first input port couples a continuous wave (CW) light. A second input port couples an optical input signal. A multimode interference semiconductor optical amplifier (MMI-SOA) determines the output port with the input port and intensity-modulation of the CW light with the optical input signal. A first output port guides the converted signal, and a second output port guides the optical input signal.
Abstract:
The present invention relates to an optical deflector driven by an electrical signal, and a wavelength tunable external resonator using the same. The optical deflector of a triangle shape, capable of controlling the refractive index of a beam depending on the electrical signal, is positioned between a reflection mirror and a diffraction grating in a Littman-Metcalf mode external resonator or between a lens and the diffraction grating in a Littrow mode external resonator. Thus, even with the reflection mirror and the diffracting grating fixed, the refractive index of the beam generated from a laser diode can be controlled by adjusting the electrical signal applied to the optical deflector, so that beam having a specific wavelength can be focused and the wavelength can be rapidly and consecutively tuned.
Abstract:
Disclosed is a method for the fabrication of a spot-size converter with a lateral-tapered waveguide (or an active layer), which utilizes a mask during a lithographic process wherein the mask has a pad that can absorb strain to be occurred during forming a lateral-tapered waveguide pattern at its distal end and the lateral-tapered waveguide is fabricated by forming the distal end on the order of about 0.6 &mgr;m in width followed by forming the lateral-tapered waveguide on the order of 0.1 &mgr;m using an wet etching. Thus, it is possible to reduce a fabrication cost because it is free from a high-resolution electron beam lithography and a stepper, and hence enhance a reproducibility of the lateral-tapered waveguide because it is free from an excessive wet etching during the use of a contact exposure equipment. Further, it is possible to integrate the spot-size converter fabricated by the above with an optical device, resulting in an increased position adjustment and reproducibility of the spot-size converter, which in turn, leads to increase in yield for the optical device.
Abstract:
The present invention relates to an optical filter whose a sidelobe disturbing a characteristic of an optical filter by weighting an optical coupling efficiency between waveguides is controlled upon applying a selective area growth method in a wavelength selective variable semiconductor optical filter and method of fabricating the same. The present invention can control the thickness of growth layer selectively by controlling the width of the dielectric thin film mask whose the growth is not achieved in the selective area growth method, can control the distance between two waveguides of the wavelength selective variable semiconductor optical filter by applying the result on the distance control between two waveguides. Accordingly, there can be changed an optical coupling efficiency between two waveguides spatially. Because the sidelobe characteristics is largely improved if the distance between two waveguides is controlled temporarily to be corresponded to one period of Hamming function, there can be fabricated a semiconductor optical filter whose the characteristic is very excellent when applying the present invention.
Abstract:
The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.