摘要:
A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.
摘要:
Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
摘要:
Provided is a long cavity single-mode laser diode in which a ring waveguide is integrated such as a conventional array waveguide (AWG)-based laser or a concave grating (CG)-based laser.
摘要:
Provided is an optical deflector for deflecting radiation beams. The optical deflector includes: a peripheral region having a first effective refractive index; and a deflection pattern region having a predetermined shape and a second effective refractive index, wherein the second effective refractive index differs from the first effective refractive index. Here, due to the deflection pattern region having the predetermined shape, the radiation beams are deflected in a direction starting from a certain point. By using the optical deflector, the locus of a light source can be designed in one of various forms, such as a straight line, a circle, an ellipse, or a parabola.
摘要:
Provided is a wavelength tunable light source that can electrically tune wavelengths by monolithically integrating an optical amplifier, a beam steering unit, and a concave diffraction grating on a single substrate. A beam is deflected by the beam steering unit when an electrical signal is applied to two electrodes installed in the beam steering unit to be incident on the diffraction grating, and then diffracted by the diffraction grating according to the incidence angle such that part of the beam with a specific wavelength is reflected, thereby achieving wavelength tuning. Since the wavelength tuning is achieved electrically, the wavelength tunable light source is structurally stable and has a rapid wavelength tuning rate.
摘要:
Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.
摘要:
Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.
摘要:
Provided are an optical vision chip (OVC) and an image recognition method using the OVC. The OVC includes: a first display displaying an object image; a second display displaying a standard model image; and an optical sensor optically or electrically coupling the object image and the standard model image respectively displayed on the first and second displays and outputting a difference between the object image and the standard model image as an electrical signal.
摘要:
Provided is a frequency-tunable terahertz light source device. The frequency-tunable terahertz light source device satisfies a Littrow diffraction condition at a wavelength and simultaneously satisfies a Littman-Metcalf diffraction condition at another wavelength using a double diffraction grating having two grating periods. Thus, oscillations simultaneously occur at the two different wavelengths, such that a terahertz wave can be stably generated by beating of the two oscillation wavelengths. In addition, the frequency-tunable terahertz light source device can readily change a frequency up to several terahertz and can be fabricated in a small size.
摘要:
Provided is an integrated semiconductor light source using locking characteristic by an external light injection, including: an active region controlling an optical gain and an optical output by current injection; and a passive region having a structure integrated with the active region and moving a cavity mode by current injection or voltage application to lock injection light.