Apparatus and method for allocating search resource of base station modem
    31.
    发明授权
    Apparatus and method for allocating search resource of base station modem 失效
    用于分配基站调制解调器的搜索资源的装置和方法

    公开(公告)号:US07447257B2

    公开(公告)日:2008-11-04

    申请号:US10746535

    申请日:2003-12-23

    Applicant: Kyung Ho Lee

    Inventor: Kyung Ho Lee

    CPC classification number: H04B1/711 H04B1/7117 H04B2201/7071

    Abstract: A system and method for allocating a search resource of a base station modem is provided. The system comprises search controlling units for receiving an allocated search resource and searching a multi-path of a radio channel to produce a search result; measuring units for measuring mobility of a terminal based on the search result; and allocating units for adaptively allocating a common search resource to the search controlling units based on a measure of mobility of the terminal.

    Abstract translation: 提供了一种用于分配基站调制解调器的搜索资源的系统和方法。 该系统包括:搜索控制单元,用于接收分配的搜索资源,并搜索无线电频道的多径以产生搜索结果; 用于基于搜索结果测量终端的移动性的测量单元; 以及基于终端的移动性的量度,将搜索控制单元自适应地分配公共搜索资源的单元分配。

    Lamination unit of ceramic green sheets
    33.
    发明申请
    Lamination unit of ceramic green sheets 失效
    陶瓷生片层压单元

    公开(公告)号:US20080163982A1

    公开(公告)日:2008-07-10

    申请号:US12005609

    申请日:2007-12-28

    Abstract: Provided is a lamination unit of ceramic green sheets including a pair of upper and lower plates having a plurality of slits formed therein; a plurality of posts of which the upper and lower ends are closely attached to corresponding surfaces of the respective plates such that the upper and lower plates are supported in parallel to each other; a plurality of fixing sections, each of which is composed of a bolt inserted into a contact portion between the plate and the post and a button surrounding the bolt; and a pressing bar attached on the bottom surface of the lower plate and pressing the top surface of the ceramic green sheets laminated under the lower plate.

    Abstract translation: 提供了一种陶瓷生片的层叠单元,其包括在其中形成有多个狭缝的一对上板和下板; 多个柱,其上端和下端紧密地连接到相应板的对应表面,使得上板和下板彼此平行地支撑; 多个固定部,每个固定部分由插入板和柱之间的接触部分的螺栓和围绕螺栓的按钮构成; 以及安装在下板的底面上的按压杆,并压制层叠在下板下方的陶瓷生片的顶面。

    Method for manufacturing a semiconductor device
    34.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US07329570B2

    公开(公告)日:2008-02-12

    申请号:US11319814

    申请日:2005-12-27

    Applicant: Kyung-Ho Lee

    Inventor: Kyung-Ho Lee

    CPC classification number: H01L21/823814 H01L21/823857 H01L21/823892

    Abstract: An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a P-well and an N-well for high voltage (HV) devices and a first well in a low voltage/medium voltage (LV/MV) region for a logic device, in a semiconductor substrate; simultaneously forming a second well in the LV/MV region for a logic device and a drift region for one of the HV devices using the same mask; and respectively forming gate oxide layers on the semiconductor substrate in the HV/MV/LV regions. According to the present invention, the number of photolithography processes can be reduced by replacing or combining an additional mask for forming an extended drain region of a high voltage depletion-enhancement CMOS (DECMOS) with a mask for forming a typical well of a logic device, so productivity of the total process of the device can be enhanced.

    Abstract translation: 根据本发明的实施例的制造半导体器件的示例性方法包括在低电压/中压(LV / MV)下形成用于高压(HV)器件和第一阱的P阱和N阱, 在半导体衬底中的逻辑器件的区域; 同时在用于逻辑器件的LV / MV区域中形成第二阱以及使用相同掩模的一个HV器件的漂移区域; 并分别在HV / MV / LV区域的半导体衬底上形成栅氧化层。 根据本发明,通过用用于形成逻辑器件的典型阱的掩模替换或组合用于形成高电压耗尽增强CMOS(DECMOS)的扩展漏极区域的附加掩模,可以减少光刻工艺的数量 ,因此可以提高设备的整个过程的生产率。

    MICROPHONE TYPE MUSIC ACCOMPANIMENT PLAYING (KARAOKE) SYSTEM WITH BACKGROUND IMAGE SELECTING FUNCTION
    35.
    发明申请
    MICROPHONE TYPE MUSIC ACCOMPANIMENT PLAYING (KARAOKE) SYSTEM WITH BACKGROUND IMAGE SELECTING FUNCTION 审中-公开
    具有背景图像选择功能的麦克风类型音乐伴奏播放(卡拉OK)系统

    公开(公告)号:US20070292831A1

    公开(公告)日:2007-12-20

    申请号:US11753820

    申请日:2007-05-25

    Applicant: Kyung Ho Lee

    Inventor: Kyung Ho Lee

    CPC classification number: G10H1/368

    Abstract: There is provided a microphone type music accompaniment playing (karaoke) system including: a memory section for storing a plurality of still and motion pictures; and a controller for, in Auto mode, combining the stored still and motion pictures of the memory section with each music accompaniment and sending the still or motion pictures selected in combination with the music accompaniment as a background image to an external display panel, or, in Select mode, sending both a music accompaniment signal and one of the still or motion pictures of the memory section as selected by a user as a background image to the external display panel. The microphone type music accompaniment playing (karaoke) system provides, in combination with a user' selected song, images of the original singer of the song and the song-related background images, thus fascinating users and greatly enhancing the demand for music accompaniment playing (karaoke) equipment.

    Abstract translation: 提供了一种麦克风式音乐伴奏播放(卡拉OK)系统,包括:存储部分,用于存储多个静止和动态影像; 以及控制器,用于在自动模式下,将所存储的静止图像和运动图像与每个音乐伴奏组合,并将与音乐伴奏组合的静止或动态图像作为背景图像发送到外部显示面板, 在选择模式中,将由用户选择的存储器部分的静止或动态图像之一作为背景图像发送到外部显示面板。 麦克风类型的音乐伴奏播放(卡拉OK)系统与用户选择的歌曲组合提供歌曲的原始歌手和与歌曲有关的背景图像的图像,从而令人着迷的用户并且极大地增强了对音乐伴奏播放的需求( 卡拉OK)设备。

    Microphone stand
    37.
    外观设计
    Microphone stand 有权
    麦克风支架

    公开(公告)号:USD547752S1

    公开(公告)日:2007-07-31

    申请号:US29235675

    申请日:2005-08-04

    Applicant: Kyung Ho Lee

    Designer: Kyung Ho Lee

    Method of fabricating T-gate
    38.
    发明申请
    Method of fabricating T-gate 有权
    制造T型门的方法

    公开(公告)号:US20070128752A1

    公开(公告)日:2007-06-07

    申请号:US11607417

    申请日:2006-12-01

    CPC classification number: H01L21/0331 H01L21/28587

    Abstract: A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    Abstract translation: 提供一种制造T型栅极的方法。 该方法包括以下步骤:在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此,可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口,因此可以制造更精细的微型T型栅电极。

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