公开(公告)号：US20120083117A1

公开(公告)日：2012-04-05

申请号：US13238297

申请日：2011-09-21

申请人： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-Heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

发明人： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-Heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

IPC分类号： H01L21/314 ,  H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/76829 ,  H01L2221/1047

摘要： Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer.

摘要翻译： 示例性实施方案涉及形成硬化多孔介电层的方法。 该方法可以包括在衬底上形成含有致孔剂的电介质层，使用第一UV固化工艺将电介质层转化为多孔介电层，以从电介质层除去致孔剂，并将多孔电介质层转化成交联的多孔介电层 使用第二UV固化方法在多孔介电层中产生交联。

公开(公告)号：US20090259227A1

公开(公告)日：2009-10-15

申请号：US12295667

申请日：2006-12-04

申请人： Sang-Hoon Ahn

发明人： Sang-Hoon Ahn

IPC分类号： A61B17/00

CPC分类号： A61C8/0089 ,  A61C8/0006 ,  A61C8/0092

摘要： Disclosed therein is a reamer for operating implant, which can very usefully apply an implant operation to a patient who is short of bone quantity to the maxillary sinus, which is easier and safer than a conventional hammering method using a drill and an osteotome or a conventional operation method for transplanting a bone or planting an implant after forming a bone window on a maxillary sinus side wall, and which can reduce a treatment time period and treatment costs by minimizing the patient's pain occurring before and after the operation of the implant. A cutting part of the reamer includes: a protruding face formed on the top surface thereof in such a manner as to upwardly upheave a partial surface including an outer circumference of the cutting part of the entire top surface of the cutting part to form a stepped jaw; a depressed face formed on the top surface thereof in such a manner as to depress a partial surface of the entire top surface of the cutting part to be opposite to the protruding face according to the formation of the protruding face, the depressed face having a reverse inclination in a clockwise direction; a cut edge horizontally formed on a connected portion between the stepped jaw and the protruding face so that the cut edge evenly disperses a force while being in horizontal line contact with the mucosa even though the cut edge is in contact with the mucosa of the maxillary sinus so as to allow a dentist to perform a cutting work safely without damaging a mucosa of a maxillary sinus; and a discharge path longitudinally formed on the cutting part in such a manner as to cut an area ranging from a partial surface of the top surface of the cutting part, i.e., a predetermined portion between the protruding face and the depressed face to a portion which is slightly shorter than the lower end of the cutting part.

摘要翻译： 其中公开了一种用于操作植入物的扩孔器，其可以非常有用地将植入操作应用于与上颌窦相比骨量不足的患者，这比使用钻头和骨凿的常规锤击方法更简单和更安全，或者常规 在上颌窦侧壁上形成骨窗后移植骨骼或种植植入物的操作方法，并且可以通过最小化在植入物操作之前和之后发生的患者的疼痛来减少治疗时间段和治疗成本。 铰刀的切割部分包括：形成在其顶表面上的突出面，以便向上地上升包括切割部分的整个顶表面的切割部分的外周的部分表面以形成台阶爪 ; 在其顶面形成凹部的表面，以使得根据突出面的形成将切割部的整个上​​表面的整个顶表面的局部表面按压到与突出面相反的方式，凹陷面具有反向 顺时针方向倾斜; 切割边缘水平地形成在台阶爪和突出面之间的连接部分上，使得即使切割边缘与上颌窦的粘膜接触，切割边缘也与粘膜水平线接触时均匀地分散力。 从而允许牙医安全地进行切割，而不会损伤上颌窦的粘膜; 以及沿切割部分纵向形成的排出路径，以便切割从切割部分的顶表面的部分表面（即，突出面和凹陷面之间的预定部分）到一部分的区域 比切割部分的下端略短。

公开(公告)号：US20080206954A1

公开(公告)日：2008-08-28

申请号：US12038278

申请日：2008-02-27

申请人： Jong-wan Choi ,  Eun-kyung Baek ,  Sang-hoon Ahn ,  Hong-gun Kim ,  Dong-chul Suh ,  Yong-soon Choi

发明人： Jong-wan Choi ,  Eun-kyung Baek ,  Sang-hoon Ahn ,  Hong-gun Kim ,  Dong-chul Suh ,  Yong-soon Choi

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/823481

摘要： A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.

摘要翻译： 制造半导体器件的方法包括在下半导体衬底上形成下部器件，并在下部器件上形成层间绝缘膜。 在层间绝缘膜上形成上半导体衬底，使得层间绝缘膜位于下半导体衬底和上半导体衬底之间。 上沟槽形成在上半导体衬底内。 上部器件隔离膜形成在上部沟槽内。 用上述器件隔离膜中的杂质化学键的波长的紫外线照射上部器件隔离膜以降低其杂质浓度。