公开(公告)号：US20250120180A1

公开(公告)日：2025-04-10

申请号：US18989194

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hajime KIMURA

IPC: H10D86/60 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3233 ,  G09G3/3291 ,  H10D86/40 ,  H10F39/00 ,  H10K59/121 ,  H10K59/131

Abstract: A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for normally-on transistors is provided. The semiconductor device includes at least a transistor, two wirings, three switches, and two capacitors. A first switch controls conduction between a first wiring and each of a first electrode of a first capacitor and a first electrode of a second capacitor. A second electrode of the first capacitor is connected to a gate of the transistor. A second switch controls conduction between the gate and a second wiring. A second electrode of the second capacitor is connected to one of a source and a drain of the transistor. A third switch controls conduction between the one of the source and the drain and each of the first electrode of the first capacitor and the first electrode of the second capacitor.

公开(公告)号：US20250120128A1

公开(公告)日：2025-04-10

申请号：US18923776

申请日：2024-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi SHINOHARA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

公开(公告)号：US20250118973A1

公开(公告)日：2025-04-10

申请号：US18989638

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H02J7/00 ,  H01M10/42

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US20250117424A1

公开(公告)日：2025-04-10

申请号：US18985817

申请日：2024-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Takahiro FUKUTOME ,  Kentaro HAYASHI

IPC: G06F16/535 ,  G06F16/532 ,  G06F16/583 ,  G06V10/25 ,  G06V10/74 ,  G06V10/75 ,  G06V10/82

Abstract: An image retrieval system that enables high-accuracy image retrieval in a short time is provided. The image retrieval system includes a processing portion provided with a neural network. The neural network includes a layer provided with a neuron. The processing portion has a function of comparing query image data with a plurality of pieces of database image data, and extracting the database image data including an area with a high degree of correspondence to the query image data as extracted image data. The processing portion has a function of extracting data of the area with a high degree of correspondence to the query image data from the extracted image data, as partial image data. The layer has a function of outputting an output value corresponding to the features of the image data input to the neural network. The processing portion has a function of comparing the above output values in the case where the respective pieces of partial image data are input with the above output value in the case where the query image data is input.

公开(公告)号：US20250115544A1

公开(公告)日：2025-04-10

申请号：US18937148

申请日：2024-11-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi SEO ,  Nobuharu OHSAWA ,  Tomohiro KUBOTA ,  Takeyoshi WATABE ,  Airi UEDA ,  Yasushi KITANO ,  Takao TOSU

IPC: H10K85/60 ,  H10K50/17 ,  H10K50/858 ,  H10K101/30

Abstract: To provide a novel arylamine compound with a low refractive index. The provided arylamine compound includes at least one aromatic group. The aromatic group includes a first benzene ring, a second benzene ring, a third benzene ring, and at least three alkyl groups. The first benzene ring, the second benzene ring, and the third benzene ring are directly bonded in this order. The first benzene ring is bonded to nitrogen of amine. The first benzene ring may further include a substituted or unsubstituted phenyl group. The second benzene ring or the third benzene ring may further include an alkylated phenyl group. Each of first positions and third positions of two or more of the first to third benzene rings is independently bonded to another benzene ring, a benzene ring of the alkylated phenyl group, any of the at least three alkyl groups, or the nitrogen of the amine.

公开(公告)号：US12273109B2

公开(公告)日：2025-04-08

申请号：US18664387

申请日：2024-05-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun Koyama

IPC: G11C5/06 ,  G11C5/14 ,  G11C8/04 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H03K3/012 ,  H03K3/037 ,  H03K19/00 ,  H01L21/8234

Abstract: Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

公开(公告)号：US12272822B2

公开(公告)日：2025-04-08

申请号：US16624319

申请日：2018-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Mayumi Mikami ,  Yohei Momma ,  Teruaki Ochiai ,  Jyo Saitou

IPC: H01M4/525 ,  C01G51/66 ,  C01G53/66 ,  H01M4/13915 ,  H01M10/0525 ,  C01G45/1214 ,  C01G51/42 ,  C01G53/44 ,  H01M4/02 ,  H01M4/1315

Abstract: A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

公开(公告)号：US12272698B2

公开(公告)日：2025-04-08

申请号：US18616403

申请日：2024-03-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US12271233B2

公开(公告)日：2025-04-08

申请号：US18136384

申请日：2023-04-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji Kusunoki ,  Hiroyuki Miyake ,  Kazunori Watanabe

IPC: G06F1/16 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F3/0488 ,  G06F15/02 ,  H10K59/40 ,  H10K77/10

Abstract: To increase the detection sensitivity of a touch panel, provide a thin touch panel, provide a foldable touch panel, or provide a lightweight touch panel. A display element and a capacitor forming a touch sensor are provided between a pair of substrates. Preferably, a pair of conductive layers forming the capacitor each have an opening. The opening and the display element are provided to overlap each other. A light-blocking layer is provided between a substrate on the display surface side and the pair of conductive layers forming the capacitor.

公开(公告)号：US20250113711A1

公开(公告)日：2025-04-03

申请号：US18978174

申请日：2024-12-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kaoru HATANO ,  Satoshi SEO ,  Shunpei YAMAZAKI

IPC: H10K59/127 ,  H04M1/02 ,  H10K50/84 ,  H10K59/12 ,  H10K59/122 ,  H10K59/124 ,  H10K71/50 ,  H10K77/10 ,  H10K102/00

Abstract: The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.