摘要:
In a semiconductor laser device having a quantum well active layer, an undoped thin spacer layer is formed between an undoped optical guide layer and a p-type cladding layer. The thickness of the spacer layer is preferably 5 nm or more but less than 10 nm. The spacer layer absorbs impurities diffusing thereinto from the p-type cladding layer. Thus, the dopant is prevented from being diffused into the undoped optical guide layer.
摘要:
A display device that includes a reflective electrode; a transparent electrode; a partition; an EL layer formed over the partition and the transparent electrode; a semi-transmissive electrode formed over the EL layer; and a coloring layer over the semi-transmissive electrode. A light-emitting region is formed to overlap with the transparent electrode, the EL layer, the semi-transmissive electrode, and the coloring layer. A non-light-emitting region is formed to overlap with the transparent electrode, the partition, the EL layer, and the coloring layer. The non-light-emitting region is formed to surround the light-emitting region. The sum of the optical length of the transparent electrode and the optical length of the EL layer is adjusted to fulfill a condition of a microcavity intensifying light of the color of the coloring layer. The optical length of the partition in the non-light-emitting region is adjusted to weaken external light incident through the coloring layer.
摘要:
A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), including: a vapor deposition source (91) which has a plurality of injection holes (92) from which vapor deposition particles are to be injected towards the film formation substrate (60), the plurality of injection holes (92) being arranged in a line or in a plurality of lines; a vapor deposition crucible (93) for supplying the vapor deposition particles to the vapor deposition source (91) via a pipe (94), the pipe being connected to the vapor deposition source (91) on a side where one end of the line(s) of the plurality of injection holes (92) is located; moving means for moving the film formation substrate (60) relative to the vapor deposition source(s) (91); and a rotation mechanism (100) for rotating the vapor deposition source (91).
摘要:
A vapor deposition apparatus (50) includes: a mask unit (54) including a vapor deposition source (70), a vapor deposition mask (60), and a mask holding member (80); a substrate holder (52); and at least either a mask unit moving mechanism (55) or a substrate moving mechanism (53), with a roller (83) provided in a surface of one of (A) the substrate holder (52) and (B) the mask holding member (80) which faces the other one of (A) the substrate holder (52) and (B) the mask holding member (80).
摘要:
A coating film (90) is formed by causing vapor deposition particles (91) to pass through a mask opening (71) of a vapor deposition mask and adhere to a substrate, the vapor deposition particles (91) being discharged from a vapor deposition source opening (61) of a vapor deposition source (60) while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. When a direction that is orthogonal to a normal line direction of the substrate and is orthogonal to a relative movement direction of the substrate is defined as a first direction, and the normal line direction of the substrate is defined as a second direction, a plurality of control plate columns are disposed in the first direction between the vapor deposition source opening and the vapor deposition mask, each control plate column including a plurality of control plates (80a and 80b) arranged along the second direction. With this configuration, a coating film in which blur at both edges of the coating film and variations in the blur are suppressed can be formed on a large-sized substrate.
摘要:
A display device that includes a reflective electrode; a transparent electrode; a partition; an EL layer formed over the partition and the transparent electrode; a semi-transmissive electrode formed over the EL layer; and a coloring layer over the semi-transmissive electrode. A light-emitting region is formed to overlap with the transparent electrode, the EL layer, the semi-transmissive electrode, and the coloring layer. A non-light-emitting region is formed to overlap with the transparent electrode, the partition, the EL layer, and the coloring layer. The non-light-emitting region is formed to surround the light-emitting region. The sum of the optical length of the transparent electrode and the optical length of the EL layer is adjusted to fulfil a condition of a microcavity intensifying light of the color of the coloring layer. The optical length of the partition in the non-light-emitting region is adjusted to weaken external light incident through the coloring layer.
摘要:
A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space (82) between a plurality of limiting plates (81) of a limiting plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate while the substrate is moved relative to the vapor deposition mask in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. It is determined whether or not it is necessary to correct the position of at least one of the plurality of limiting plates in the X axis direction, and in the case where it is necessary to correct the position, the position of at least one of the plurality of limiting plates in the X axis direction is corrected. Accordingly, a coating film whose edge blur is suppressed can be stably formed at a desired position on a large-sized substrate.
摘要:
The emission efficiency of a light-emitting device including a microcavity structure is improved. The light-emitting device includes a plurality of light-emitting elements. The plurality of light-emitting elements each include a reflective electrode, a transparent electrode, a plurality of light-emitting layers, and a semi-transmissive and semi-reflective electrode stacked in that order. The plurality of light-emitting layers emit light of different colors. A surface roughness of the transparent electrode in the light-emitting element which is among the plurality of light-emitting elements and in which light emitted from the light-emitting layer closest to the reflective electrode is amplified and emitted outside is greater than surface roughnesses of the transparent electrodes in the other light-emitting elements.
摘要:
First and second vapor deposition particles (91a, 91b) discharged from first and second vapor deposition source openings (61a, 61b) pass through first and second limiting openings (82a, 82b) of a limiting plate unit (80), pass through mask opening (71) of a vapor deposition mask (70) and adhere to a substrate (10) so as to form a coating film. If regions on the substrate to which the first vapor deposition particles and the second vapor deposition particles adhere if the vapor deposition mask is assumed not to exist are respectively denoted by a first region (92a) and a second region (92b), the limiting plate unit limits the directionalities of the first vapor deposition particles and the second vapor deposition particles in a first direction (10a) that travel to the substrate such that the second region is contained within the first region. Accordingly, it is possible to form a light emitting layer with a doping method by using vapor deposition by color.
摘要:
A vapor deposition method of the present invention includes the steps of (i) preparing a mask unit including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other, (ii) while moving at least one of the mask unit and the film formation substrate (200) relative to the other, depositing a vapor deposition flow, emitted from the vapor deposition source (85), onto a vapor deposition region (210), and (iii) adjusting the position of a second shutter (111) so that the second shutter (111) blocks a vapor deposition flow traveling toward the vapor deposition unnecessary region (210).