公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US09246101B2

公开(公告)日：2016-01-26

申请号：US13583611

申请日：2010-10-29

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： H01L21/00 ,  B05C13/02 ,  B05C21/00 ,  B05C11/11 ,  H01L51/00 ,  C23C14/04 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A deposition mask is used to pattern a thin film 3 on a substrate 10 by depositing deposition particles through a plurality of openings K having a stripe pattern. The deposition mask includes a frame 65; a plurality of mask layers 70 provided in the frame so as to overlap each other; and a support layer 71 provided between the mask layers 70. Each of the mask layers 70 is formed by arranging a plurality of mask wires 72 in a stripe pattern in a tensioned state, and the support layer 71 is formed by arranging a plurality of support wires 74 in a tensioned state so as to cross the mask wires 72. A plurality of gaps 73 in each of the plurality of mask layers 70 overlap each other to form a plurality of through gaps 73a that linearly extend through all of the plurality of mask layers 70. The openings K are formed by the through gaps 73a.

摘要翻译： 沉积掩模用于通过沉积具有条纹图案的多个开口K沉积沉积颗粒来在基板10上图案化薄膜3。 沉积掩模包括框架65; 设置在所述框架中以使得彼此重叠的多个掩模层70; 以及设置在掩模层70之间的支撑层71.每个掩模层70通过以张紧状态布置条纹图案中的多个掩模布线72而形成，并且支撑层71通过布置多个支撑件 电线74处于张紧状态，以便穿过掩模线72.多个掩模层70中的每一个中的多个间隙73彼此重叠以形成多个直线延伸穿过所有多个掩模的通孔73a 开口K由通孔73a形成。

公开(公告)号：US08845808B2

公开(公告)日：2014-09-30

申请号：US13997173

申请日：2011-12-19

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： C23C14/26 ,  C23C16/448 ,  H05B33/10 ,  C23C14/24 ,  H01L21/02 ,  H01L51/00 ,  H01L51/56

CPC分类号： C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US08673082B2

公开(公告)日：2014-03-18

申请号：US13980875

申请日：2012-01-13

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： C23C16/00

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C16/042 ,  G03B37/06 ,  H01L51/0008

摘要： A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

摘要翻译： 本发明的坩埚（50）包括：朝向要在其上形成膜的成膜基板上注入蒸镀颗粒的开口（55a） 设置成面对开口（55a）的焦点部件（54a），其反射从开口（55a）喷射的气相沉积粒子; 以及向所述成膜基板反射已被所述焦点部件（54a）反射的气相沉积粒子的旋转抛物面（55b）。

公开(公告)号：US20140014036A1

公开(公告)日：2014-01-16

申请号：US14007956

申请日：2012-03-23

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L21/02 ,  B65D85/00

摘要： A vapor deposition particle emitting device of the present invention includes: a nozzle section (110) having emission holes (111) from which gaseous vapor deposition particles are emitted out; a heating plate unit (100), provided in the nozzle section (110), which is made up of heating plates (101) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device (160) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates (101), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.

摘要翻译： 本发明的气相沉积粒子发射装置包括：喷嘴部分（110），其具有从其中排出气态气相沉积颗粒的发射孔（111）; 设置在所述喷嘴部分（110）中的加热板单元（100），所述加热板单元由加热板（101）组成，所述加热板具有由于气相沉积颗粒粘附到所述表面而具有气相沉积材料的表面的表面 ; 以及用于加热蒸镀材料的加热装置（160），其被保持在每个加热板（101）的表面上，使得蒸镀材料的温度不低于成为 转化成气态。

公开(公告)号：US08628620B2

公开(公告)日：2014-01-14

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： C23C16/04 ,  C23C16/00 ,  C23C14/24 ,  C23C14/22 ,  C23C14/00

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。

公开(公告)号：US20130319331A1

公开(公告)日：2013-12-05

申请号：US13985854

申请日：2012-03-08

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L51/56

CPC分类号： H01L51/56 ,  C23C14/243 ,  C23C14/26 ,  C23C14/542 ,  C23C14/562 ,  H01L51/0008

摘要： A vapor deposition particle injection device (501) of the present invention includes: vapor deposition particle generating sections (110) and (120) for generating vapor deposition particles in the form of vapor by heating vapor deposition materials (114) and (124); and a nozzle section (170) which (i) is connected to the vapor deposition particle generating sections (110) and (120) and (ii) has an injection hole (171) from which the vapor deposition particles generated by the vapor deposition particle generating sections (110) and (120) are injected outward. The vapor deposition particle generating section (120) has a smaller capacity for the vapor deposition material than the vapor deposition particle generating section (110).

摘要翻译： 本发明的气相沉积粒子注入装置（501）包括：通过加热气相沉积材料（114）和（124）产生汽相形式的气相沉积颗粒的气相沉积颗粒产生部分（110）和（120） 和（i）连接到气相沉积颗粒产生部分（110）和（120）的喷嘴部分（170）和（ii）具有喷射孔（171），由气相沉积颗粒产生的气相沉积颗粒 产生部分（110）和（120）向外注入。 气相沉积粒子产生部分（120）具有比气相沉积粒子产生部分（110）更小的气相沉积材料的能力。

公开(公告)号：US20130302572A1

公开(公告)日：2013-11-14

申请号：US13980571

申请日：2012-01-13

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H05B33/14

CPC分类号： H05B33/145 ,  C23C14/042 ,  C23C14/54 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0002 ,  H01L51/56 ,  H01L2251/558 ,  Y10T428/24612

摘要： A film formation substrate (200) is arranged such that (i) a base end, in a y-axis direction, of a film-thickness-gradually-diminishing part (23sR) of a first film (23R) overlaps a first film formation region (24R), and (ii) a film-thickness-gradually-diminishing part (23sB) of a second film (23B) is disposed on an outside, in the y-axis direction, of a second film formation region (24B) and overlaps the film-thickness-gradually-diminishing part (23sR) of the first film (23R) so as to compensate for a gradually diminished thickness of the film-thickness-gradually-diminishing part (23sR).

摘要翻译： 成膜基板（200）配置成：（i）第一膜（23R）的膜厚逐渐减小部（23sR）的y轴方向的基端与第一膜形成物 区域（24R），和（ii）第二膜形成区域（24B）的y轴方向的外侧设置第二膜（23B）的膜厚逐渐减小部分（23sB） 并且与第一膜（23R）的膜厚逐渐减小部分（23sR）重叠，以补偿膜厚逐渐减小部分（23sR）的逐渐减小的厚度。

公开(公告)号：US20130292501A1

公开(公告)日：2013-11-07

申请号：US13996515

申请日：2011-12-16

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： B03C1/005

CPC分类号： B03C1/005 ,  B03C1/30 ,  B03C2201/20 ,  C23C14/12 ,  C23C14/564 ,  H01L51/0016

摘要： A layer (71), made from a material that is attracted by a magnet, is formed in at least part of a chamber component (70), which at least part makes in contact with a film forming material. A method for collecting a film forming material includes the steps of: (a) exfoliating an attachment (22) which has attached to a surface of the chamber component (70); and (b) collecting the attachment (22) by separating a fragment of the layer (71), which fragment has been exfoliated in the step (a), while causing the fragment to be attracted by a magnet (202a).

摘要翻译： 在由至少部分与成膜材料接触的室部件（70）的至少一部分中形成由被磁体吸引的材料制成的层（71）。 收集成膜材料的方法包括以下步骤：（a）剥离附着在室部件（70）的表面上的附件（22）; 和（b）通过在片段被磁体（202a）吸引的同时分离在步骤（a）中剥离的片段的片段（71）来收集附件（22）。