公开(公告)号：US20100232550A1

公开(公告)日：2010-09-16

申请号：US12724247

申请日：2010-03-15

申请人： Hyoung Gon Lee ,  Byoung Gill Kim ,  Jeong Woo Kim ,  Won Gyu Song ,  Min Sung Kwak ,  Jae Hyung Song ,  In Hwan Choi ,  Jin Woo Kim

发明人： Hyoung Gon Lee ,  Byoung Gill Kim ,  Jeong Woo Kim ,  Won Gyu Song ,  Min Sung Kwak ,  Jae Hyung Song ,  In Hwan Choi ,  Jin Woo Kim

IPC分类号： H04L27/00

CPC分类号： H04L27/06 ,  H04L2025/03382

摘要： A transmitting system, a receiving system, and a method of processing a broadcast signal are disclosed herein. The receiving system include a tuner, a demodulator, a block decoder, an RS frame decoder, and a service manager. The tuner receives a broadcast signal. Herein the broadcast signal includes mobile service data, a service map table signaling access information of the mobile service data, and a plurality of known data sequences. The mobile service data and the service map table are packetized to an RS frame. The demodulator demodulates the received broadcast signal. The block decoder turbo-decodes the mobile service data and the service map table included in the demodulated broadcast signal in block units. The RS frame decoder forming an RS frame including the turbo-decoded mobile service data and service map table, performs primary first cyclic redundancy check (CRC)-decoding and RS-decoding, and performs secondary CRC-decoding on the primarily CRC-decoded and RS-decoded RS frame. The service manager acquires source IP address information of IP datagrams of the RS frame-decoded mobile service data from the service map table.

摘要翻译： 这里公开了发送系统，接收系统和处理广播信号的方法。 接收系统包括调谐器，解调器，块解码器，RS帧解码器和服务管理器。 调谐器接收广播信号。 这里，广播信号包括移动业务数据，服务映射表表示移动业务数据的接入信息，以及多个已知的数据序列。 将移动业务数据和业务映射表分组化为RS帧。 解调器解调收到的广播信号。 块解码器以块为单位对包含在解调的广播信号中的移动业务数据和业务映射表进行turbo解码。 形成包括turbo解码移动业务数据和服务映射表的RS帧的RS帧解码器执行主要的第一循环冗余校验（CRC）解码和RS解码，并对主要被CRC解码的CRC解码和 RS解码RS帧。 服务管理器从服务映射表中获取RS帧解码的移动业务数据的IP数据报的源IP地址信息。

公开(公告)号：US07675177B1

公开(公告)日：2010-03-09

申请号：US11074456

申请日：2005-03-07

申请人： Hongqiang Lu ,  Byung-Sung Kwak ,  Wilbur G. Catabay

发明人： Hongqiang Lu ,  Byung-Sung Kwak ,  Wilbur G. Catabay

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/2885 ,  H01L21/76867 ,  H01L21/76877

摘要： A copper interconnect with a Sn coating is formed in a damascene structure by forming a trench in a dielectric layer. The trench is formed by electroplating copper simultaneously with a metal dopant to form a doped copper layer. The top level of the doped copper layer is reduced to form a planarized surface level with the surface of the first dielectric layer. The doped copper is annealed to drive the metal dopants to form a metal dopant capping coating at the planarized top surface of the doped copper layer.

摘要翻译： 通过在电介质层中形成沟槽，在镶嵌结构中形成具有Sn涂层的铜互连。 沟槽通过同时与金属掺杂剂电镀铜形成掺杂的铜层而形成。 掺杂铜层的顶层被还原成与第一介电层的表面形成平坦化的表面水平。 将掺杂的铜退火以驱动金属掺杂剂，以在掺杂铜层的平坦化顶表面上形成金属掺杂物覆盖涂层。

公开(公告)号：US20100050217A1

公开(公告)日：2010-02-25

申请号：US12461732

申请日：2009-08-21

申请人： Jong Yeul Suh ,  Jae Hyung Song ,  Min Sung Kwak ,  Joon Hui Lee ,  In Hwan Choi ,  Chul Soo Lee ,  Pil Sup Shin

发明人： Jong Yeul Suh ,  Jae Hyung Song ,  Min Sung Kwak ,  Joon Hui Lee ,  In Hwan Choi ,  Chul Soo Lee ,  Pil Sup Shin

IPC分类号： H04N7/173

CPC分类号： H04N21/64322 ,  H04H20/93 ,  H04L67/06 ,  H04L67/26 ,  H04N21/2323 ,  H04N21/235 ,  H04N21/2353 ,  H04N21/23614 ,  H04N21/2362 ,  H04N21/237 ,  H04N21/262 ,  H04N21/4345 ,  H04N21/4348 ,  H04N21/435 ,  H04N21/4516 ,  H04N21/4622 ,  H04N21/478 ,  H04N21/6175 ,  H04N21/6437 ,  H04N21/8126 ,  H04N21/84 ,  H04N21/85406

摘要： A method of processing additional information related to an announced service or content in a Non-Real Time (NRT) service and the broadcast receiver are disclosed herein. A method of providing a Non-Real Time (NRT) service in a broadcasting receiver includes receiving a service map table (SMT) and a first descriptor through a service signaling channel, identifying an image identifier and an image type of an image for an NRT service based upon the first descriptor, receiving the image via a flute session and displaying the image when corresponding service is played, wherein the image is logo or icon data for the NRT service. The method may further include connecting a service signaling channel, parsing the received SMT and the first descriptor, determining whether a service is the NRT service based upon the parsed SMT and storing the received image.

摘要翻译： 本文公开了处理与非实时（NRT）服务中的所宣布的服务或内容有关的附加信息的方法。 在广播接收机中提供非实时（NRT）服务的方法包括通过业务信令信道接收服务映射表（SMT）和第一描述符，识别图像标识符和用于NRT的图像的图像类型 基于第一描述符的服务，经由长笛会话接收图像并在播放相应的服务时显示图像，其中图像是用于NRT服务的徽标或图标数据。 该方法还可以包括连接服务信令信道，解析所接收的SMT和第一描述符，基于所解析的SMT确定服务是否为NRT服务并存储所接收的图像。

公开(公告)号：US20090288943A1

公开(公告)日：2009-11-26

申请号：US12124918

申请日：2008-05-21

申请人： Byung Sung Kwak ,  Michael Stowell ,  Nety Krishna

发明人： Byung Sung Kwak ,  Michael Stowell ,  Nety Krishna

IPC分类号： C23C14/34

CPC分类号： C23C14/088 ,  C23C14/3414 ,  H01M4/0426 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/5825 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0585

摘要： A method of fabricating a layer of a thin film battery comprises providing a sputtering target and depositing the layer on a substrate using a physical vapor deposition process enhanced by a combination of plasma processes. The deposition process may include: (1) generation of a plasma between the target and the substrate; (2) sputtering the target; (3) supplying microwave energy to the plasma; and (4) applying radio frequency power to the substrate. A sputtering target for a thin film battery cathode layer has an average composition of LiMaNbZc, wherein 0.20>{b/(a+b)}>0 and the ratio of a to c is approximately equal to the stoichiometric ratio of a desired crystalline structure of the cathode layer, N is an alkaline earth element, M is selected from the group consisting of Co, Mn, Al, Ni and V, and Z is selected from the group consisting of (PO4), O, F and N.

摘要翻译： 制造薄膜电池层的方法包括提供溅射靶并使用通过等离子体处理的组合增强的物理气相沉积工艺将该层沉积在衬底上。 沉积过程可以包括：（1）在靶和衬底之间产生等离子体; （2）溅射目标; （3）向等离子体提供微波能量; 和（4）向基板施加射频功率。 用于薄膜电池阴极层的溅射靶具有LiMaNbZc的平均组成，其中0.20> {b /（a + b）}> 0，并且a与c的比值近似等于所需晶体结构的化学计量比 的阴极层，N是碱土金属元素，M选自Co，Mn，Al，Ni和V，Z选自（PO4），O，F和N.

公开(公告)号：US07436040B2

公开(公告)日：2008-10-14

申请号：US11323398

申请日：2005-12-29

申请人： Derryl D. J. Allman ,  Hemanshu D. Bhatt ,  Charles E. May ,  Peter Austin Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David T. Price ,  David Pritchard

发明人： Derryl D. J. Allman ,  Hemanshu D. Bhatt ,  Charles E. May ,  Peter Austin Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David T. Price ,  David Pritchard

IPC分类号： H01L23/58

CPC分类号： H01L21/7682 ,  H01L21/76808 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via.

摘要翻译： 在集成电路中转移空穴扩散的方法包括以下步骤：在集成电路的第一导电层中形成具有边界的电导体，在电介质层的边界内在第一导电 层和第二导电层，并且在电导体的通孔和边界之间形成槽，用于将电导体中的空隙扩散转移离开通孔。

公开(公告)号：US07361965B2

公开(公告)日：2008-04-22

申请号：US11323400

申请日：2005-12-29

申请人： Derryl D. J. Allman ,  Hemanshu D. Bhatt ,  Charles E. May ,  Peter Austin Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David T. Price ,  David Pritchard

发明人： Derryl D. J. Allman ,  Hemanshu D. Bhatt ,  Charles E. May ,  Peter Austin Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David T. Price ,  David Pritchard

IPC分类号： H01L23/58

CPC分类号： H01L21/76838 ,  H01L24/02 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/14

摘要： A method and apparatus for redirecting void diffusion away from vias in an integrated circuit design includes steps of forming an electrical conductor in a first electrically conductive layer of an integrated circuit design, forming a via between a distal end of the electrical conductor and a second electrically conductive layer of the integrated circuit design, and reducing tensile stress in the electrical conductor to divert void diffusion away from the via.

摘要翻译： 用于在集成电路设计中将空隙扩散转向远离通孔的方法和装置包括在集成电路设计的第一导电层中形成电导体的步骤，在电导体的远端和第二电导体之间形成通孔 集成电路设计的导电层，并且减小电导体中的拉伸应力以将空隙扩散转移离开通孔。

公开(公告)号：US20070155160A1

公开(公告)日：2007-07-05

申请号：US11323400

申请日：2005-12-29

申请人： Derryl Allman ,  Hemanshu Bhatt ,  Charles May ,  Peter Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David Price ,  David Pritchard

发明人： Derryl Allman ,  Hemanshu Bhatt ,  Charles May ,  Peter Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David Price ,  David Pritchard

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L24/02 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/14

摘要： A method and apparatus for redirecting void diffusion away from vias in an integrated circuit design includes steps of forming an electrical conductor in a first electrically conductive layer of an integrated circuit design, forming a via between a distal end of the electrical conductor and a second electrically conductive layer of the integrated circuit design, and reducing tensile stress in the electrical conductor to divert void diffusion away from the via.

摘要翻译： 用于在集成电路设计中将空隙扩散转向远离通孔的方法和装置包括在集成电路设计的第一导电层中形成电导体的步骤，在电导体的远端和第二电导体之间形成通孔 集成电路设计的导电层，并且减小电导体中的拉伸应力以将空隙扩散转移离开通孔。

公开(公告)号：US20070155146A1

公开(公告)日：2007-07-05

申请号：US11646829

申请日：2006-12-27

申请人： Sung Kwak

发明人： Sung Kwak

IPC分类号： H01L21/3205

CPC分类号： H01L21/7624 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78639 ,  H01L29/78684

摘要： Provided is a method for forming a semiconductor wafer having an insulator. According to the method, an insulating layer pattern and a silicon germanium layer are formed on a wafer, and a structure similar to a SOI wafer is formed. Accordingly, since the thin insulating layer pattern exists between the surface of the wafer, in which a circuit is formed, and a lower layer thereof, parasitic capacitance is reduced and thus device performance can be improved. In addition, punch through due to a short channel effect, DIBL and leakage current can be solved as with the SOI wafer. Further, the insulating layer pattern is formed instead of an insulating layer formed on the SOI wafer, so that holes are prevented from being stacked in a neutral region. Consequently, a floating body effect can be prevented from occurring.

摘要翻译： 提供一种用于形成具有绝缘体的半导体晶片的方法。 根据该方法，在晶片上形成绝缘层图案和硅锗层，形成与SOI晶片相似的结构。 因此，由于薄的绝缘层图案存在于形成有电路的晶片的表面和下层之间，所以寄生电容减小，从而可以提高器件性能。 另外，由于沟道效应短，可以像SOI晶片一样解决DIBL和漏电流。 此外，代替在SOI晶片上形成的绝缘层来形成绝缘层图案，从而防止在中性区域中堆叠空穴。 因此，可以防止发生浮体效应。

公开(公告)号：US20070117346A1

公开(公告)日：2007-05-24

申请号：US11320772

申请日：2005-12-30

申请人： Sung Kwak

发明人： Sung Kwak

IPC分类号： H01L21/76

CPC分类号： H01L21/76235

摘要： A method for fabricating a semiconductor device can prevent a leakage current and the decrease of threshold voltage by rounding corners of a trench. The method may include the steps of forming a pad insulating layer in a semiconductor substrate defined with an active region and a device isolation region, forming a first trench, forming polymer at inner sidewalls of the first trench, forming a second trench, removing the polymer, forming an oxide layer by thermally oxidizing the semiconductor substrate, and forming insulating layers for device isolation in the first and second trenches.

摘要翻译： 制造半导体器件的方法可以通过对沟槽的角进行四舍五入来防止漏电流和阈值电压的降低。 该方法可以包括以下步骤：在由有源区和器件隔离区限定的半导体衬底中形成衬垫绝缘层，形成第一沟槽，在第一沟槽的内侧壁处形成聚合物，形成第二沟槽，去除聚合物 通过热氧化半导体衬底形成氧化物层，以及在第一和第二沟槽中形成用于器件隔离的绝缘层。

公开(公告)号：US07214793B2

公开(公告)日：2007-05-08

申请号：US10533052

申请日：2003-11-26

申请人： Byong-Sung Kwak ,  Ki-Nam Chung ,  Ki-Ho Koh ,  Hee-Jun Hwang

发明人： Byong-Sung Kwak ,  Ki-Nam Chung ,  Ki-Ho Koh ,  Hee-Jun Hwang

IPC分类号： C07D281/16

CPC分类号： C07D281/16

摘要： Disclosed is a method of preparing 10H-dibenzo[b,f][1,4]thiazepin-11-one, including reacting dithiosalicylic acid with 1-chloro-2-nitrobenzene in a basic aqueous solution in the presence or absence of a reducing agent, to prepare 2-(2-nitrophenylsulfuryl)benzoic acid; subjecting the 2-(2-nitrophenylsulfuryl)benzoic acid to nitro group reduction in the presence of hydrogen, a solvent and a heterogeneous metal catalyst, to prepare 2-(2-aminophenylsulfuryl)benzoic acid; and directly cyclizing the 2-(2-aminophenylsulfuryl)benzoic acid in an organic solvent in the presence or absence of an acid catalyst. The method according to the present invention is economical due to the use of the inexpensive starting material, and also environmentally friendly and efficient by minimizing the use of the organic solvent and performing direct cyclization without the activation of carboxylic acid.

摘要翻译： 公开了一种制备10H-二苯并[b，f] [1,4]硫杂吖庚因-11-酮的方法，包括在存在或不存在还原剂的情况下，将二硫代水杨酸与1-氯-2-硝基苯在碱性水溶液中反应 制备2-（2-硝基苯基硫基）苯甲酸; 在氢气，溶剂和非均相金属催化剂的存在下使2-（2-硝基苯基亚磺酰基）苯甲酸进行硝基还原，制备2-（2-氨基苯基硫基）苯甲酸; 并在酸催化剂存在或不存在下，在有机溶剂中直接环化2-（2-氨基苯基硫基）苯甲酸。 根据本发明的方法由于使用廉价的起始材料而是经济的，并且通过最小化有机溶剂的使用并且在没有羧酸活化的情况下进行直接环化，也是环境友好和有效的。