公开(公告)号：US20120249740A1

公开(公告)日：2012-10-04

申请号：US13432704

申请日：2012-03-28

Applicant: Tae-Yon LEE ,  Joon-Ho LEE ,  Yoon-Dong PARK ,  Kyoung-Ho HA ,  Yong-Jei LEE ,  Kwang-Hyuk BAE ,  Kyu-Min KYUNG ,  Tae-Chan KIM

Inventor： Tae-Yon LEE ,  Joon-Ho LEE ,  Yoon-Dong PARK ,  Kyoung-Ho HA ,  Yong-Jei LEE ,  Kwang-Hyuk BAE ,  Kyu-Min KYUNG ,  Tae-Chan KIM

IPC: H04N13/02 ,  H01L27/146

CPC classification number: H04N13/271 ,  H04N13/207 ,  H04N13/254

Abstract: A three-dimensional image sensor may include a light source module configured to emit at least one light to an object, a sensing circuit configured to polarize a received light that represents the at least one light reflected from the object and configured to convert the polarized light to electrical signals, and a control unit configured to control the light source module and sensing circuit. A camera may include a receiving lens; a sensor module configured to generate depth data, the depth data including depth information of objects based on a received light from the objects; an engine unit configured to generate a depth map of the objects based on the depth data, configured to segment the objects in the depth map, and configured to generate a control signal for controlling the receiving lens based on the segmented objects; and a motor unit configured to control focusing of the receiving lens.

Abstract translation: 三维图像传感器可以包括：被配置为向对象发射至少一个光的光源模块;感测电路，被配置为使表示从物体反射的至少一个光的接收光偏振，并且被配置为将偏振光 以及被配置为控制光源模块和感测电路的控制单元。 相机可以包括接收透镜; 传感器模块，被配置为生成深度数据，所述深度数据包括基于来自所述对象的接收光的对象的深度信息; 发动机单元，被配置为基于所述深度数据生成所述对象的深度图，所述深度图被配置为在所述深度图中分割所述对象，并​​且被配置为基于所述分割对象生成用于控制所述接收透镜的控制信号; 以及被配置为控制所述接收透镜的聚焦的马达单元。

公开(公告)号：US20120205607A1

公开(公告)日：2012-08-16

申请号：US13455297

申请日：2012-04-25

Applicant: Tae-Yon LEE

Inventor： Tae-Yon LEE

IPC: H01L45/00 ,  B82Y99/00

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/778

Abstract: A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.

Abstract translation: PRAM器件包括下电极，相变纳米线和上电极。 相变纳米线可以电连接到下电极并且包括单个元件。 上电极可以电连接到相变纳米线。

公开(公告)号：US08017929B2

公开(公告)日：2011-09-13

申请号：US12285449

申请日：2008-10-06

Applicant: Youn-seon Kang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Yoon-ho Khang ,  Cheol-kyu Kim ,  Dong-seok Suh ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Yoon-ho Khang ,  Cheol-kyu Kim ,  Dong-seok Suh ,  Tae-yon Lee

IPC: H01L29/02

CPC classification number: H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Abstract translation: 相变材料层包括锑（Sb）和铟（In）和镓（Ga）中的至少一种。 相变存储器件包括：存储节点，包括相变材料层和连接到存储节点的开关器件。 相变材料层包括Sb和In和Ga中的至少一种。

公开(公告)号：US08003970B2

公开(公告)日：2011-08-23

申请号：US12073499

申请日：2008-03-06

Applicant: Cheol-kyu Kim ,  Yoon-ho Khang ,  Tae-yon Lee

Inventor： Cheol-kyu Kim ,  Yoon-ho Khang ,  Tae-yon Lee

IPC: H01L45/00

CPC classification number: H01L27/2436 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided is a phase-change random access memory (PRAM). The PRAM includes a bottom electrode, a bottom electrode contact layer, which is formed on one area of the bottom electrode, and an insulating layer, which is formed on a side of the bottom electrode contact layer, a phase-change layer, which is formed on the bottom electrode contact layer and the insulating layer and is formed of a phase-change material having a crystallization temperature between 100° C. and 150° C., and a top electrode, which is formed on the phase-change layer.

Abstract translation: 提供了相变随机存取存储器（PRAM）。 PRAM包括底电极，底电极接触层，其形成在底电极的一个区域上，绝缘层形成在底电极接触层的一侧，相变层 形成在底部电极接触层和绝缘层上，并且由结晶温度在100℃至150℃之间的相变材料和形成在相变层上的顶部电极形成。

公开(公告)号：US20100323492A1

公开(公告)日：2010-12-23

申请号：US12801450

申请日：2010-06-09

Applicant: Tae-Yon Lee

Inventor： Tae-Yon Lee

IPC: H01L45/00

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/778

Abstract: A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.

Abstract translation: PRAM器件包括下电极，相变纳米线和上电极。 相变纳米线可以电连接到下电极并且包括单个元件。 上电极可以电连接到相变纳米线。

公开(公告)号：US20090159868A1

公开(公告)日：2009-06-25

申请号：US12153559

申请日：2008-05-21

Applicant: Youn-seon Kang ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Tae-yon Lee

IPC: H01L47/00

CPC classification number: H01L45/148 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1625

Abstract: Provided are a phase change material layer and a phase change random access memory (PRAM) device including the same. By providing a phase change material layer formed of a III-V family material and a chalcogenide, a PRAM device with a set time shorter than that of a conventional PRAM device and improved retention characteristics can be provided.

Abstract translation: 提供了一种相变材料层和包括该相变材料层的相变随机存取存储器（PRAM）装置。 通过提供由III-V族材料和硫族化物形成的相变材料层，可以提供比常规PRAM器件短的设定时间的PRAM器件和改进的保持特性。

公开(公告)号：US07233054B1

公开(公告)日：2007-06-19

申请号：US11290713

申请日：2005-11-29

Applicant: Dong Ho Anh ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

Inventor： Dong Ho Anh ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

IPC: H01L29/12

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.

Abstract translation: 本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>>（（（（（（（（ 固体溶液由Ge-Sb-Si固溶体形成， Te基合金和三元金属合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。 根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。