摘要:
The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要:
The present invention provides a phase change memory cell comprising (GeASbBTeC)1−x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要翻译:本发明提供了一种相变存储器单元,其包括(>> Sb> Te>>>>>((((((((((( R a固体溶液,固溶体由Ge-Sb-Te基合金和三元金属形成 合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。 根据本发明的非易失性相变存储单元提供了许多优点,例如高速度,高数据保持和多位操作。
摘要:
A semiconductor package includes a substrate, a first semiconductor chip module attached to the substrate, a conductive connection member attached to the first semiconductor chip module, and a second semiconductor chip module attached to the conductive connection member. The first and second semiconductor chip modules are formed to have step like shapes to and extend laterally in opposite directions so as to define a zigzag arrangement together.
摘要:
A spiral staircase shaped stacked semiconductor package is presented. The package includes a semiconductor chip module, a substrate and connection members. The semiconductor chip module includes at least two semiconductor chips which have chip selection pads and through-electrodes. The semiconductor chips are stacked such that the chip selection pads are exposed and the through-electrodes of the stacked semiconductor chips are electrically connected to one another. The substrate has the semiconductor chip module mounted thereto and has connection pads. The connection members electrically connect the chip selection pads to respective connection pads.
摘要:
A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.
摘要:
A semiconductor memory having a multilevel quantum dot structure is formed by alternatively disposing conductive layers and insulation layers, and processing these layers so that quantum dots are formed in the conductive layers. The writing and reading of data into the semiconductor memory are achieved by using the principle of Coulomb blockade and quantized voltage drops. The size and distribution of the quantum dots are controlled by agglomeration, selective oxidation, etc. in order to achieve the desired quantum dot layer structure so that the immigration of charges between a semiconductor channel and each quantum dot layer is different.
摘要:
Disclosed herein is an engine valve seat, including: iron (Fe) as a main component; about 0.6˜1.2 wt % of carbon (C); about 1.0˜3.0 wt % of nickel (Ni); about 8.0˜11.0 wt % of cobalt (Co); about 3.0˜6.0 wt % of chromium (Cr); about 4.0˜7.0 wt % of molybdenum (Mo); about 0.5˜2.5 wt % of tungsten (W); about 1.0˜3.0 wt % of manganese (Mn); about 0.2˜1.0 wt % of calcium (Ca); and other inevitable impurities.
摘要:
Provided are a light emitting module and a backlight unit. The light emitting module comprises a module board comprising a plurality of first and second pads and a plurality of protrusion holes, a heatsink plate corresponding to a second surface opposite to a first surface of the module board, the heatsink plate comprising a plurality of protrusions respectively inserted into the protrusion holes of the module board, and a plurality of light emitting devices, each comprising a heatsink frame connected to the protrusions of the heatsink plate which comprises a first frame part on which the plurality of protrusions are disposed and a second frame part folded from the first frame part and disposed under the module board.
摘要:
A control method of a multi-air conditioner in which a plurality of indoor units is connected to one outdoor unit and refrigerant flow amount is adjusted by electronic expansion valves comprises a share step in which a plurality of indoor units exchanges their operation information, a comparison and judgment step in which each above indoor unit compares and judges its operation status based on the exchanged operation information, and an adjustment step in which each above indoor unit adjusts refrigerant flow amount supplied to each indoor unit based on the compared and judged operation status.
摘要:
A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.