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    Selective thrombin inhibitors
    32.
    发明授权
    Selective thrombin inhibitors 失效
    选择性凝血酶抑制剂

    公开(公告)号：US5977114A

    公开(公告)日：1999-11-02

    申请号：US967018

    申请日：1997-11-10

    Applicant: Yeong Soo Oh ,  Sang Soo Kim ,  Sang Yeul Hwang ,  Mi Kyung Yun ,  Seong Ryul Hwang ,  Seong Won Hong ,  Yong Hee Lee ,  Yi Na Jeong ,  Koo Lee ,  You Seung Shin

    Inventor： Yeong Soo Oh ,  Sang Soo Kim ,  Sang Yeul Hwang ,  Mi Kyung Yun ,  Seong Ryul Hwang ,  Seong Won Hong ,  Yong Hee Lee ,  Yi Na Jeong ,  Koo Lee ,  You Seung Shin

    IPC: C07C257/22 ,  C07C311/19 ,  C07C311/29 ,  C07C311/42 ,  C07D211/60 ,  C07D295/185 ,  C07D295/205 ,  C07D295/26 ,  A61K31/495 ,  C07D241/04

    CPC classification number: C07C257/22 ,  C07C311/19 ,  C07C311/29 ,  C07C311/42 ,  C07D211/60 ,  C07D295/185 ,  C07D295/205 ,  C07D295/26 ,  C07C2101/02 ,  C07C2101/10 ,  C07C2101/14

    Abstract: The present invention relates to a novel selective thrombin inhibitor having the following formula (I), which is also effective by oral administration: ##STR1## in which R.sup.1 represents acetyl substituted with aryl or aryloxy, or represents sulfonyl substituted with substituted or unsubstituted aryl or N-containing heterocyclic group,x represents a group of formula ##STR2## R.sup.2 and R.sup.3 independently of one another represent hydrogen; cycloalkyl substituted or unsubstituted with carboxyl or alkoxycarbonyl; arylalkyloxy; hydroxy; or lower alkyl substituted or unsubstituted with carboxyl, alkoxycarbonyl or hydroxy, orR.sup.2 and R.sup.3 together with nitrogen atom to which they are attached can form a piperidine group substituted with carboxyl or alkoxycarbonyl,R.sup.4 represents hydrogen, lower alkyl or lower alkoxy,R.sup.5 represents alkanesulfonyl; alkoxycarbonyl; alkylcarbonyl; formyl; lower alkyl; aryl substituted or unsubstituted with alkoxy or haloalkyl; or hydroxy-substituted lower alkyl, andR.sup.6 and R.sup.7 independently of one another represent hydrogen, lower alkyl or amino,and to a process for preparation thereof and a pharmaceutical composition for thrombin inhibition which comprises the compound of formula (I) as an active ingredient.

    Abstract translation: 本发明涉及一种新型的具有下列通式（I）的选择性凝血酶抑制剂，其也可通过口服给药有效：其中R1表示被芳基或芳氧基取代的乙酰基，或表示被取代或未取代的芳基或含N 杂环基，x代表式R2和R3彼此独立地表示氢; 被羧基或烷氧基羰基取代或未取代的环烷基; 芳基烷氧基; 羟基; 或与羧基，烷氧基羰基或羟基取代或未取代的低级烷基，或R 2和R 3与它们所连接的氮原子一起形成被羧基或烷氧羰基取代的哌啶基，R 4表示氢，低级烷基或低级烷氧基，R 5表示烷磺酰基 ; 烷氧基羰基 烷基羰基; 甲酰基 低级烷基 被烷氧基或卤代烷基取代或未取代的芳基; 或羟基取代的低级烷基，R 6和R 7彼此独立地表示氢，低级烷基或氨基，以及其制备方法和用于凝血酶抑制的药物组合物，其包含式（I）化合物作为活性成分 。

    Semiconductor device having a contact window structure
    34.
    发明授权
    Semiconductor device having a contact window structure 失效
    具有接触窗结构的半导体器件

    公开(公告)号：US5751048A

    公开(公告)日：1998-05-12

    申请号：US553038

    申请日：1995-11-03

    Applicant: Yong Hee Lee ,  Young Woo Seo

    Inventor： Yong Hee Lee ,  Young Woo Seo

    IPC: H01L21/28 ,  H01L21/265 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

    CPC classification number: H01L27/10873 ,  H01L21/76897

    Abstract: A structure of a semiconductor device is disclosed whereby a gate insulating layer, a polycrystalline silicon layer, a tungsten silicide layer and a first insulating layer are formed on a semiconductor substrate. Gates are formed by the removal of the layers by dry etching, wherein the etch rate of the tungsten silicide layer is faster than the other layers, thereby forming an undercut region in the tungsten silicide layer. A second insulating layer is formed on the surface of the resultant structure to form spacers, and a contact window is formed between the gates via an etching process. The second insulating layer portion which forms the spacers need not be thick to prevent etching of the gates when forming the contact window, therefore good step coverage is achieved and reliability of the device is increased.

    Abstract translation: 公开了半导体器件的结构，由此在半导体衬底上形成栅极绝缘层，多晶硅层，硅化钨层和第一绝缘层。 通过干蚀刻去除层形成栅极，其中硅化钨层的蚀刻速率比其他层更快，从而在硅化钨层中形成底切区域。 在所得结构的表面上形成第二绝缘层以形成间隔物，并且通过蚀刻工艺在栅极之间形成接触窗口。 形成间隔物的第二绝缘层部分不必是厚的，以防止在形成接触窗口时蚀刻栅极，因此实现了良好的阶梯覆盖，并且增加了器件的可靠性。

    Antenna system having a choke reflector for minimizing sideward radiation
    36.
    发明授权
    Antenna system having a choke reflector for minimizing sideward radiation 失效
    具有用于最小化侧向辐射的扼流器反射器的天线系统

    公开(公告)号：US5710569A

    公开(公告)日：1998-01-20

    申请号：US428012

    申请日：1995-04-25

    Applicant: Jung Kun Oh ,  Yong Hee Lee ,  Jae Ho Lee ,  Jung Sik Kim ,  Byung Ill Oh

    Inventor： Jung Kun Oh ,  Yong Hee Lee ,  Jae Ho Lee ,  Jung Sik Kim ,  Byung Ill Oh

    IPC: H01Q3/20 ,  H01Q19/10 ,  H01Q21/00

    CPC classification number: H01Q19/108 ,  H01Q3/20

    Abstract: A antenna system of the present invention comprises a radiator for radiating a radio frequency, which is converted from electric power, and which has a impedance matching unit and a power divider; a first reflector for reflecting and filtering the radio frequency; and at least one second reflector for filtering the radio frequency radiated in the sideward direction of the antenna system, which is vertically attached to the first reflector, and is able to be moved in a horizontal direction.

    Abstract translation: 本发明的天线系统包括：辐射器，用于辐射从电力转换的射频，并具有阻抗匹配单元和功率分配器; 用于反射和过滤射频的第一反射器; 以及至少一个第二反射器，用于对垂直附接到第一反射器的天线系统的侧向辐射的射频进行滤波，并且能够在水平方向上移动。

    Metal oxide semiconductor transistor and a method for manufacturing the same
    37.
    发明授权
    Metal oxide semiconductor transistor and a method for manufacturing the same 失效
    金属氧化物半导体晶体管及其制造方法

    公开(公告)号：US5548143A

    公开(公告)日：1996-08-20

    申请号：US567718

    申请日：1995-12-05

    Applicant: Yong-hee Lee

    Inventor： Yong-hee Lee

    IPC: H01L29/78 ,  H01L21/336 ,  H01L29/10 ,  H01L29/80 ,  H01L21/265

    CPC classification number: H01L29/1033 ,  H01L29/1083 ,  H01L29/66575 ,  H01L29/7838 ,  Y10S257/919

    Abstract: AMOS transistor with enhanced electrical characteristics and a method for manufacturing the same. In the channel region, a first impurity region is provided for adjusting a threshold voltage, a second impurity region is provided which serves as a diffusion barrier, and a third impurity region is provided for preventing a punchthrough. These regions are formed sequentially at subsequently shallower depths in the substrate. The disclosed transistor minimizes short-channel effects and punchthrough without reducing the current driving capability of the device.

    Abstract translation: 具有增强的电特性的AMOS晶体管及其制造方法。 在通道区域中，提供用于调整阈值电压的第一杂质区域，提供用作扩散阻挡层的第二杂质区域，并且提供用于防止穿透的第三杂质区域。 这些区域依次形成在衬底中随后较浅的深度。 所公开的晶体管最小化短沟道效应和穿透，而不降低器件的电流驱动能力。

    Method for manufacturing a CMOS semiconductor device
    38.
    发明授权
    Method for manufacturing a CMOS semiconductor device 失效
    CMOS半导体器件的制造方法

    公开(公告)号：US5484739A

    公开(公告)日：1996-01-16

    申请号：US352248

    申请日：1994-12-08

    Applicant: Yong-hee Lee ,  Young-woo Seo ,  Jung-hyun Shin

    Inventor： Yong-hee Lee ,  Young-woo Seo ,  Jung-hyun Shin

    IPC: H01L21/8238 ,  H01L21/285 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L21/8244

    CPC classification number: H01L27/10852 ,  H01L21/28512 ,  H01L27/0922 ,  H01L27/10873 ,  Y10S148/082

    Abstract: A semiconductor device and manufacturing method thereof is disclosed in which a connection pad layer for securing a contact margin is formed on a first conductivity-type area whereas electrodes are connected directly through openings on a second conductivity-type area without the connection pad layer. In the method, an insulating layer is formed on the overall surface of a substrate. Using a mask pattern for exposing the first conductivity-type area, the insulating layer placed on an exposed portion is anisotropically etched so that the remaining insulating layer serves as an impurity-implantation preventing mask in a succeeding first conductivity-type impurity implantation step. A material layer for the connection pad layer is formed prior to the impurity-implantation step and patterned after the impurity implantation. In forming the second conductivity-type area, an additional insulating layer is formed, and using a mask pattern for exposing the second conductivity area, selectively and anisotropically etched so that the remaining insulating layer or the mask pattern for exposing the second conductivity-type area serves as an impurity-implantation preventing mask.

    Abstract translation: 公开了一种半导体器件及其制造方法，其中用于固定接触边缘的连接焊盘层形成在第一导电类型区域上，而电极直接通过第二导电类型区域上的开口而不连接焊盘层。 在该方法中，在基板的整个表面上形成绝缘层。 使用用于暴露第一导电类型区域的掩模图案，将放置在暴露部分上的绝缘层进行各向异性蚀刻，使得剩余的绝缘层在随后的第一导电型杂质注入步骤中用作杂质注入防止掩模。 用于连接焊盘层的材料层在杂质注入步骤之前形成并且在杂质注入之后被图案化。 在形成第二导电类型区域时，形成另外的绝缘层，并且使用用于暴露第二导电区域的掩模图案进行选择性和各向异性蚀刻，使得用于暴露第二导电类型区域的剩余绝缘层或掩模图案 用作杂质注入防止掩模。

    System and method of detecting communication device having built-in camera
    39.
    发明授权
    System and method of detecting communication device having built-in camera 有权
    检测具有内置摄像头的通信设备的系统和方法

    公开(公告)号：US07903147B2

    公开(公告)日：2011-03-08

    申请号：US10879714

    申请日：2004-06-28

    Applicant: Yong-hee Lee ,  Hyung-geun Lee

    Inventor： Yong-hee Lee ,  Hyung-geun Lee

    IPC: H04N5/228

    CPC classification number: H04M1/72577 ,  G07C9/00111 ,  G08B13/2454 ,  H04M1/7253 ,  H04M2250/52

    Abstract: Provided are a communication device having a built-in camera and a system and method of detecting a communication device having a built-in camera. In the system, a communication device can transmit camera existence data or particular identification data thereof, and in response thereto, a detection device can suspend a camera function of the communication device when a user with the communication device enters a security zone. In addition, the detection device can recover the camera function when the user with the communication device exits the security zone.

    Abstract translation: 提供具有内置相机的通信设备以及检测具有内置相机的通信设备的系统和方法。 在该系统中，通信装置可以发送相机存在数据或其特定的识别数据，并且响应于此，当具有通信装置的用户进入安全区域时，检测装置可以暂停通信装置的相机功能。 此外，当具有通信设备的用户离开安全区域时，检测设备可以恢复摄像机功能。

    AUDIO DIGITAL TO ANALOG CONVERTER AND AUDIO PROCESSING APPARATUS INCLUDING THE SAME
    40.
    发明申请
    AUDIO DIGITAL TO ANALOG CONVERTER AND AUDIO PROCESSING APPARATUS INCLUDING THE SAME 审中-公开
    音频数字到模拟转换器和音频处理设备，包括它们

    公开(公告)号：US20100329482A1

    公开(公告)日：2010-12-30

    申请号：US12761468

    申请日：2010-04-16

    Applicant: Yong-Hee LEE

    Inventor： Yong-Hee LEE

    IPC: H03G3/00 ,  H03M1/66

    CPC classification number: H03G3/002 ,  H03M3/344 ,  H03M3/506 ,  H03M7/3026

    Abstract: An audio DAC includes a delta/sigma modulator (DSM), a pulse width modulator (PWM) and an output unit. The DSM delta-sigma modulates an over-sampled digital signal to generate a multi-bit quantization signal. The PWM pulse width modulates the multi-bit quantization signal to generate a single-bit pulse width modulation signal. The output unit includes an analog filter that low-pass filters the single-bit pulse width modulation signal to generate an analog output signal.

    Abstract translation: 音频DAC包括Δ/Σ调制器（DSM），脉宽调制器（PWM）和输出单元。 DSM delta-sigma调制过采样数字信号以产生多位量化信号。 PWM脉冲宽度调制多位量化信号以产生单位脉宽调制信号。 输出单元包括模拟滤波器，其对单位脉宽调制信号进行低通滤波以产生模拟输出信号。

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