Abstract:
Disclosed is a vibration motor for a portable terminal, including a flat spring; a cylindrical magnetic substance mounted on the flat spring; an annular magnetic substance disposed around the cylindrical magnetic substance mounted on the flat spring; and a coil disposed between the cylindrical magnetic substance and the annular magnetic substance, wherein the magnetic substances perform a linear reciprocal movement by the electromagnetic force generated between the magnetic substances and the coil and by the elastic force of the flat spring as an electric current is applied to the coil. The vibration motor operates at higher resonant frequencies than those of conventional vibration motors, thereby improving the sense of an after-vibration and realizing a delicate haptic feedback function.
Abstract:
Disclosed is a method for providing a haptic feedback in a touch screen, which includes displaying a plurality of soft buttons on a touch screen; applying a first pattern vibration to the touch screen if a pressing detection value for a corresponding soft button according to contact of a user input means reaches a predetermined first threshold value; and applying a second pattern vibration to the touch screen if a pressing detection value for the corresponding soft button reaches a predetermined second threshold value, the second pattern vibration being different from the first pattern vibration, the second threshold value being different from the first threshold value.
Abstract:
An optical module comprises a waveguide, at least one optical transducer positioned on the waveguide for transducing an optical signal into an electric signal or an electric signal into an optical signal and a connection socket seated on the waveguide, the optical transducer being mounted in the connection socket.
Abstract:
A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
Abstract:
A semiconductor laser having a spot-size converter (SSC) is provided. The semiconductor laser includes: a substrate; a gain region formed on the substrate to emit laser; an SSC region formed on the substrate to convert an optical mode of the emitted laser; and an upper layer formed on the gain region and the SSC region and having a larger thickness in the SSC region in comparison with the gain region. As a result, the laser vertically expands through the upper layer that is thicker along the SSC region so that an NFP (near field pattern) becomes larger and an FFP (far field pattern) becomes smaller, thus minimizing insertion loss into an optical fiber.
Abstract:
A method of detecting an etching end-point includes the steps of: forming a mask on a pattern area of an etching object; forming an etching indicator on an etching area of the etching object, which is not covered by the mask; etching the etching object using the mask; and evaluating the size of a remaining object covered by the mask using the etching indicator.
Abstract:
Disclosed is a method for manufacturing a semiconductor optical device for flip-chip bonding. The method includes the steps of: etching an active layer and clad which are sequentially stacked on a semiconductor substrate into first and second alignment keys and an optical area, which has a mesa structure; growing at least two insulating layers at mesa-etched portions between the first and second alignment keys and the optical areas; and forming protection masks on the first and second alignment keys, growing an electrode on the optical area and the insulating layer except for the protection masks, and removing the protection masks.