Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications
    32.
    发明授权
    Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications 有权
    双电流路径LDMOSFET,具有分级PBL,适用于超高压智能电源应用

    公开(公告)号:US07851857B2

    公开(公告)日:2010-12-14

    申请号:US12182398

    申请日:2008-07-30

    摘要: A dual current path LDMOSFET transistor (40) is provided which includes a substrate (400), a graded buried layer (401), an epitaxial drift region (404) in which a drain region (416) is formed, a first well region (406) in which a source region (412) is formed, a gate electrode (420) formed adjacent to the source region (412) to define a first channel region (107), and a current routing structure that includes a buried RESURF layer (408) in ohmic contact with a second well region (414) formed in a predetermined upper region of the epitaxial layer (404) so as to be completely covered by the gate electrode (420), the current routing structure being spaced apart from the first well region (406) and from the drain region (416) on at least a side of the drain region to delineate separate current paths from the source region and through the epitaxial layer.

    摘要翻译: 提供了双电流路径LDMOSFET晶体管(40),其包括衬底(400),渐变埋层(401),其中形成有漏极区(416)的外延漂移区(404),第一阱区 406),其中形成源区(412),与源极区(412)相邻形成以限定第一沟道区(107)的栅极(420),以及包括埋置的RESURF层的电流布线结构 408)与形成在外延层(404)的预定上部区域中的第二阱区域(414)欧姆接触,以便被栅电极(420)完全覆盖,电流布线结构与第一 阱区域(406)和漏极区域(416)之间的区域,以描绘与源极区域和通过外延层的分离的电流路径。

    Dual Current Path LDMOSFET with Graded PBL for Ultra High Voltage Smart Power Applications
    33.
    发明申请
    Dual Current Path LDMOSFET with Graded PBL for Ultra High Voltage Smart Power Applications 有权
    双电流路径LDMOSFET,具有用于超高压智能电源应用的分级PBL

    公开(公告)号:US20100025756A1

    公开(公告)日:2010-02-04

    申请号:US12182398

    申请日:2008-07-30

    IPC分类号: H01L29/78 H01L21/336

    摘要: A dual current path LDMOSFET transistor (40) is provided which includes a substrate (400), a graded buried layer (401), an epitaxial drift region (404) in which a drain region (416) is formed, a first well region (406) in which a source region (412) is formed, a gate electrode (420) formed adjacent to the source region (412) to define a first channel region (107), and a current routing structure that includes a buried RESURF layer (408) in ohmic contact with a second well region (414) formed in a predetermined upper region of the epitaxial layer (404) so as to be completely covered by the gate electrode (420), the current routing structure being spaced apart from the first well region (406) and from the drain region (416) on at least a side of the drain region to delineate separate current paths from the source region and through the epitaxial layer.

    摘要翻译: 提供了双电流路径LDMOSFET晶体管(40),其包括衬底(400),渐变埋层(401),其中形成有漏极区(416)的外延漂移区(404),第一阱区 406),其中形成源区(412),与源极区(412)相邻形成以限定第一沟道区(107)的栅极(420),以及包括埋置的RESURF层的电流布线结构 408)与形成在外延层(404)的预定上部区域中的第二阱区(414)欧姆接触,以便被栅电极(420)完全覆盖,电流布线结构与第一 阱区域(406)和漏极区域(416)之间的区域,以描绘与源极区域和通过外延层的分离的电流路径。

    Pharmaceutical compositions and methods to vaccinate against disseminated candidiasis and other infectious agents
    34.
    发明申请
    Pharmaceutical compositions and methods to vaccinate against disseminated candidiasis and other infectious agents 审中-公开
    用于接种弥撒念珠菌病和其他感染因子的药物组合物和方法

    公开(公告)号:US20070077256A1

    公开(公告)日:2007-04-05

    申请号:US11327197

    申请日:2006-01-06

    IPC分类号: A61K39/02

    摘要: The invention provides a vaccine including an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, with an adjuvant in a pharmaceutically acceptable medium. The invention also provides a method of treating or preventing hematogenously disseminated or mucocutaneous candidiasis. The method includes administering an immunogenic amount of a vaccine an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, in a pharmaceutically acceptable medium. A method of treating or preventing disseminated candidiasis also is provided that includes administering an effective amount of an isolated Als protein family member having cell adhesion activity, or an functional fragment thereof, to inhibit the binding or invasion of Candida to a host cell or tissue. The Als protein family member can be derived from a Candida strain selected from the group consisting of Candida albicans, Candida krusei, Candida tropicalis, Candida glabrata and Candida parapsilosis and the Als protein family member includes Als1p, Als3p, Als5p, Als6p, Als7p or Als9p. Also provided is a method of treating or preventing Staphylococcus aureus infections. The method includes administering an immunogenic amount of a vaccine an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, in a pharmaceutically acceptable medium.

    摘要翻译: 本发明提供了包含具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗,其在药学上可接受的培养基中与佐剂一起使用。 本发明还提供了治疗或预防血液弥漫性或粘膜皮肤念珠菌病的方法。 该方法包括在药学上可接受的培养基中施用免疫原性量的具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗。 还提供了治疗或预防弥漫性念珠菌病的方法,其包括施用有效量的具有细胞粘附活性的分离的Als蛋白家族成员或其功能片段,以抑制念珠菌与宿主细胞或组织的结合或侵入。 Als蛋白家族成员可以衍生自选自白色念珠菌,克罗斯假丝酵母,热带假丝酵母,光滑假丝酵母和副假丝酵母的念珠菌菌株,Als蛋白家族成员包括Als1p,Als3p,Als5p,Als6p,Als7p或Als9p 。 还提供了治疗或预防金黄色葡萄球菌感染的方法。 该方法包括在药学上可接受的培养基中施用免疫原性量的具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗。

    Lossless clamping circuit of power converter having relatively higher efficiency
    35.
    发明申请
    Lossless clamping circuit of power converter having relatively higher efficiency 失效
    功率转换器的无损钳位电路具有较高的效率

    公开(公告)号:US20050024803A1

    公开(公告)日:2005-02-03

    申请号:US10902356

    申请日:2004-07-27

    IPC分类号: H02M1/34 H02M3/335 H02H3/26

    摘要: An energy-feedback clamping circuit of a power converter is proposed. The converter includes a transformer coupled to a full-wave rectifier circuit. The clamping circuit includes: two clamping diodes having two anodes coupled to each other at a common-anode terminal and two cathodes coupled to two terminals of a secondary winding of the transformer, a first clamping capacitor having a first terminal coupled to a cathode of a first rectifying diode of the rectifier circuit and a second terminal coupled to the common-anode terminal, a second clamping capacitor having a first terminal coupled to a connecting node of the output filtering inductor and capacitor of the rectifier circuit and a second terminal coupled to the common-anode terminal, and a converter circuit having an input terminal coupled to the second clamping capacitor and an output terminal for offering a power source.

    摘要翻译: 提出了一种功率转换器的能量反馈钳位电路。 该转换器包括耦合到全波整流电路的变压器。 钳位电路包括:两个钳位二极管,其具有在共阳极端子处彼此耦合的两个阳极和耦合到变压器的次级绕组的两个端子的两个阴极;第一钳位电容器,具有耦合到 整流电路的第一整流二极管和耦合到共阳极端子的第二端子,第二钳位电容器,其具有耦合到输出滤波电感器和整流器电路的电容器的连接节点的第一端子,以及耦合到整流电路的第二端子 公共阳极端子和具有耦合到第二钳位电容器的输入端子的转换器电路和用于提供电源的输出端子。

    Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits

    公开(公告)号:US20200007119A1

    公开(公告)日:2020-01-02

    申请号:US16454078

    申请日:2019-06-27

    摘要: Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.