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31.发明授权公开(公告)号：US07977126B2
公开(公告)日：2011-07-12
申请号：US12098653
申请日：2008-04-07
Applicant: Yun-gyu Lee , Hye-hyang Park , Ki-ju Im , Byoung-deog Choi
Inventor： Yun-gyu Lee , Hye-hyang Park , Ki-ju Im , Byoung-deog Choi
IPC: H01L21/00 , H01L51/40 , H01L21/425
CPC classification number: H01L27/1214 , H01L27/3269
Abstract: A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.
Abstract translation: 一种制造包括光电二极管和晶体管的有机发光器件的方法，包括在形成在衬底上的缓冲层的分离部分上形成第一半导体层和第二半导体层; 在所述第一半导体层上形成栅极金属层，所述栅极金属层覆盖所述第一半导体层的中心区域; 通过在不被栅极金属层覆盖的第一半导体层的区域中注入杂质来形成第一半导体层中的高浓度P掺杂区域和高浓度N掺杂区域以形成光电二极管; 在所述第二半导体层中形成源极和漏极区域和沟道区域; 并且通过蚀刻从第一半导体层的中心区域去除栅极金属层，并通过蚀刻同时形成栅电极，栅电极与第二半导体层的沟道区域绝缘，以形成晶体管。
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32.发明申请公开(公告)号：US20110095296A1
公开(公告)日：2011-04-28
申请号：US12910650
申请日：2010-10-22
Applicant: Byoung-Kwon Choo , Kyu-Sik Cho , Won-Kyu Lee , Yong-Hwan Park , Sang-Ho Moon , Tae-Hoon Yang , Joon-Hoo Choi , Min-Chul Shin , Bo-Kyung Choi , Yun-Gyu Lee
Inventor： Byoung-Kwon Choo , Kyu-Sik Cho , Won-Kyu Lee , Yong-Hwan Park , Sang-Ho Moon , Tae-Hoon Yang , Joon-Hoo Choi , Min-Chul Shin , Bo-Kyung Choi , Yun-Gyu Lee
CPC classification number: H01L27/3262 , H01L29/41733
Abstract: A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.
Abstract translation: 公开了一种薄膜晶体管（TFT）和具有该薄膜晶体管的有机发光显示装置。 在一个实施例中，TFT包括形成在基板上的栅电极。 在具有栅电极的基板上形成栅绝缘层。 在栅极绝缘层上形成有源层。 源极电极形成在有源层上。 漏极形成为基本上围绕有源层上的源电极的至少三个表面。
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33.发明授权公开(公告)号：US08927991B2
公开(公告)日：2015-01-06
申请号：US13137791
申请日：2011-09-13
Applicant: Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
Inventor： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
CPC classification number: H01L51/56 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L27/3265
Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.
Abstract translation: OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层 以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及 电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。
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Patent Agency Ranking
34.发明授权公开(公告)号：US08716040B2
公开(公告)日：2014-05-06
申请号：US13113279
申请日：2011-05-23
Applicant: Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
Inventor： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
IPC: H01L21/00
CPC classification number: H01L51/56 , H01L27/1288 , H01L27/3248
Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.
Abstract translation: 一种有机发光二极管（OLED）显示器及其制造方法，所述OLED显示器包括：基板主体; 包括形成在所述基板主体上的多晶有源层和第一电容器电极的多晶硅层图案; 形成在所述多晶硅层图案上的栅极绝缘层图案; 形成在所述栅极绝缘层图案上的包括栅电极和第二电容电极的第一导电层图案; 形成在所述第一导电层图案上的层间绝缘层图案; 以及包括形成在层间绝缘层图案上的源电极，漏电极和像素电极的第二导电层图案。 栅极绝缘层图案与多晶硅层图案和第一导电层图案中的任一个同时被图案化。
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35.发明申请公开(公告)号：US20120267629A1
公开(公告)日：2012-10-25
申请号：US13330477
申请日：2011-12-19
Applicant: Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
Inventor： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
IPC: H01L33/08
CPC classification number: H01L51/5271 , H01L27/3244
Abstract: In an organic light-emitting display apparatus for improving image quality and a method of manufacturing the same, the organic light-emitting display apparatus comprises a substrate, a first electrode disposed on the substrate, an intermediate layer disposed on the first electrode and including an organic emission layer, a second electrode disposed on the intermediate layer, and a reflective unit disposed near the intermediate layer and reflecting visible light emitted from the intermediate layer.
Abstract translation: 在用于提高图像质量的有机发光显示装置及其制造方法中，有机发光显示装置包括基板，设置在基板上的第一电极，设置在第一电极上的中间层， 有机发光层，设置在中间层上的第二电极，以及设置在中间层附近并反射从中间层发射的可见光的反射单元。
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36.发明申请公开(公告)号：US20120104393A1
公开(公告)日：2012-05-03
申请号：US13137791
申请日：2011-09-13
Applicant: Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
Inventor： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
CPC classification number: H01L51/56 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L27/3265
Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.
Abstract translation: OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层 以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及 电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。
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公开(公告)号：US07977681B2
公开(公告)日：2011-07-12
申请号：US12222003
申请日：2008-07-31
Applicant: Ki-Ju Im , Byong-Deog Choi , Won-Sik Kim , Hye-Hyang Park , Hui-Won Yang , Yun-Gyu Lee
Inventor： Ki-Ju Im , Byong-Deog Choi , Won-Sik Kim , Hye-Hyang Park , Hui-Won Yang , Yun-Gyu Lee
IPC: H01L29/04 , H01L31/036 , H01L27/15 , H01L31/12 , H01L33/00 , H01L31/0232 , G01J1/42
CPC classification number: H01L31/153 , G01J1/02 , G01J1/0209 , G01J1/04 , G01J1/0418 , G01J1/0488 , G01J1/4228 , G02F1/13318 , H01L27/1446 , H01L27/3269 , H01L31/02162 , H01L31/103 , H01L31/105
Abstract: A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.
Abstract translation: 光传感器包括具有多个光入射层的光入射单元，所述光入射单元相对于外部光具有变化的透光率，以及包括多个感光元件的感光单元，所述感光单元被配置 根据透过光入射单元的光量来输出电信号以确定外部光的强度，每个光敏元件被配置为根据透过各个光入射层的光输出电信号。
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公开(公告)号：US20090032823A1
公开(公告)日：2009-02-05
申请号：US12222003
申请日：2008-07-31
Applicant: Ki-Ju Im , Byong-Deog Choi , Won-Sik Kim , Hye-Hyang Park , Hui-Won Yang , Yun-Gyu Lee
Inventor： Ki-Ju Im , Byong-Deog Choi , Won-Sik Kim , Hye-Hyang Park , Hui-Won Yang , Yun-Gyu Lee
CPC classification number: H01L31/153 , G01J1/02 , G01J1/0209 , G01J1/04 , G01J1/0418 , G01J1/0488 , G01J1/4228 , G02F1/13318 , H01L27/1446 , H01L27/3269 , H01L31/02162 , H01L31/103 , H01L31/105
Abstract: A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.
Abstract translation: 光传感器包括具有多个光入射层的光入射单元，所述光入射单元相对于外部光具有变化的透光率，以及包括多个感光元件的感光单元，所述感光单元被配置 根据透过光入射单元的光量来输出电信号以确定外部光的强度，每个光敏元件被配置为根据透过各个光入射层的光输出电信号。
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