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公开(公告)号:US09793132B1
公开(公告)日:2017-10-17
申请号:US15154790
申请日:2016-05-13
Applicant: APPLIED MATERIALS, INC.
Inventor: Wenguang Li , James S. Papanu , Ramesh Krishnamurthy , Prabhat Kumar , Brad Eaton , Ajay Kumar , Alexander N. Lerner
IPC: H01L21/00 , H01L21/308 , H01L21/78 , H01L21/3065
CPC classification number: H01L21/3086 , H01L21/02057 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/78
Abstract: Etch masks and methods of dicing semiconductor wafers are described. In an example, an etch mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. The etch mask also includes a plurality of particles dispersed throughout the water-soluble matrix. The plurality of particles has an average diameter approximately in the range of 5-100 nanometers. A ratio of weight % of the solid component to weight % of the plurality of particles is approximately in the range of 1:0.1-1:4.
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公开(公告)号:US08991329B1
公开(公告)日:2015-03-31
申请号:US14169502
申请日:2014-01-31
Applicant: Applied Materials, Inc.
Inventor: Jungrae Park , Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
CPC classification number: H01L21/02282 , B05B1/00 , B05B3/1014 , B05B3/1035 , H01L21/3081 , H01L21/3086 , H01L21/6715 , H01L21/6835 , H01L21/78 , H01L2221/68327
Abstract: Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.
Abstract translation: 描述了改进的晶片涂布工艺,装置和系统。 在一个实施例中,改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。 在一个实施例中,用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。 可旋转台具有位于半导体晶片周边之外的向下倾斜区域。 该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。 该装置还包括构造成旋转可旋转台的马达。
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