METHODS AND SYSTEMS FOR FORMING FILMS ON SUBSTRATES

    公开(公告)号:US20200378000A1

    公开(公告)日:2020-12-03

    申请号:US16854893

    申请日:2020-04-21

    Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

    Rapid conductive cooling using a secondary process plane
    9.
    发明授权
    Rapid conductive cooling using a secondary process plane 有权
    使用二次加工平面进行快速导电冷却

    公开(公告)号:US09209049B2

    公开(公告)日:2015-12-08

    申请号:US14189696

    申请日:2014-02-25

    Abstract: In one embodiment, a substrate processing apparatus includes a chamber having an interior volume with an upper portion and a lower portion, a cooling source disposed in the upper portion of the interior volume, a heating source opposing the cooling source, a magnetically movable substrate support that moves between the upper portion and the lower the portion, and a plurality of sensors coupled to the chamber to detect the position of the substrate support relative to the heating source and the cooling source.

    Abstract translation: 在一个实施例中,衬底处理设备包括具有内部容积的腔室,其具有上部和下部,设置在内部容积的上部的冷却源,与冷却源相对的加热源,可磁性的衬底支撑 其在上部和下部之间移动,并且多个传感器耦合到室以检测衬底支撑件相对于加热源和冷却源的位置。

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