公开(公告)号：USD924825S1

公开(公告)日：2021-07-13

申请号：US29634785

申请日：2018-01-24

Applicant: Applied Materials, Inc.

Designer： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Hansel Lo ,  Agus Sofian Tjandra ,  Taewan Kim ,  Tobin Kaufman-Osborn

公开(公告)号：US10770292B2

公开(公告)日：2020-09-08

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20190316256A1

公开(公告)日：2019-10-17

申请号：US16382643

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US10358715B2

公开(公告)日：2019-07-23

申请号：US15173356

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L21/8234 ,  H01L21/687 ,  C23C16/02 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20160056033A1

公开(公告)日：2016-02-25

申请号：US14830131

申请日：2015-08-19

Applicant: The Regents of the University of California ,  GLOBALFOUNDRIES, Inc. ,  Applied Materials, Inc.

Inventor： Kasra Sardashti ,  Tobin Kaufman-Osborn ,  Tyler Kent ,  Andrew Kummel ,  Shariq Siddiqui ,  Bhagawan Sahu ,  Adam Brand ,  Naomi Yoshida

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/306 ,  H01L29/66181 ,  H01L29/94

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III_V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

Abstract translation: 在栅极氧化物沉积之前对SiGe或Ge表面的表面预处理清洁SiGe或Ge表面以提供氢封端表面或硫钝化（或S-H）表面。 在25-200℃的范围内进行低温下的高介电常数氧化物的原子层沉积（ALD），形成氧化物层。 退火在升高的温度下进行。 在损伤敏感的III_V半导体表面上的氧化物沉积的方法在100-200℃的低温下用氢和TMA（三甲基铝）的循环脉冲进行表面的原位清洗。原子层沉积（ALD ）的高介电常数氧化物形成氧化物层。 退火在升高的温度下进行。 退火可以产生硅封端的界面。