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    Steam oxidation initiation for high aspect ratio conformal radical oxidation
    3.
    发明授权
    Steam oxidation initiation for high aspect ratio conformal radical oxidation 有权

    公开(公告)号：US11189485B2

    公开(公告)日：2021-11-30

    申请号：US16836351

    申请日：2020-03-31

    Applicant: Applied Materials, Inc.

    Inventor： Christopher S. Olsen ,  Taewan Kim

    IPC: H01L21/02 ,  H01L23/29 ,  H01L23/31

    Abstract: A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate. A semiconductor device includes a silicon and nitrogen containing layer; a feature formed in the silicon and nitrogen containing layer having an aspect ratio of at least 40:1; and an oxide layer on the face of the feature having a thickness in a bottom region of the silicon and nitrogen containing layer that is at least 95% of a thickness of the oxide layer in a top region.

    Argon addition to remote plasma oxidation
    4.
    发明授权
    Argon addition to remote plasma oxidation 有权

    公开(公告)号：US11081340B2

    公开(公告)日：2021-08-03

    申请号：US16849713

    申请日：2020-04-15

    Applicant: Applied Materials, Inc.

    Inventor： Hansel Lo ,  Christopher S. Olsen ,  Eric Kihara Shono ,  Johanes S. Swenberg ,  Erika Hansen ,  Taewan Kim ,  Lara Hawrylchak

    IPC: H01L27/11582 ,  H01L21/02 ,  H01J37/32 ,  H01L21/311

    Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.

    Side inject designs for improved radical concentrations
    6.
    发明授权
    Side inject designs for improved radical concentrations 有权

    公开(公告)号：US11501945B2

    公开(公告)日：2022-11-15

    申请号：US17102051

    申请日：2020-11-23

    Applicant: Applied Materials, Inc.

    Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Hansel Lo ,  Agus Sofian Tjandra ,  Taewan Kim ,  Tobin Kaufman-Osborn

    IPC: H01J37/04 ,  H01L21/67 ,  H01J37/32 ,  H01J37/20

    Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

    Conformal oxidation processes for 3D NAND
    8.
    发明授权
    Conformal oxidation processes for 3D NAND 有权

    公开(公告)号：US11322347B2

    公开(公告)日：2022-05-03

    申请号：US16660646

    申请日：2019-10-22

    Applicant: Applied Materials, Inc.

    Inventor： Johanes F. Swenberg ,  Taewan Kim ,  Christopher S. Olsen ,  Erika Hansen

    IPC: H01L21/02 ,  H01L27/11521 ,  H01L21/28 ,  H01L27/11568

    Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

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