公开(公告)号：US20210214846A1

公开(公告)日：2021-07-15

申请号：US17149023

申请日：2021-01-14

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Carl Louis White ,  Eric James Shero ,  William George Petro ,  Herbert Terhorst ,  Gnyanesh Trivedi ,  Mark Olstad ,  Ankit Kimtee ,  Kyle Fondurulia ,  Michael Schmotzer ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/458

Abstract: The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

公开(公告)号：US20210180184A1

公开(公告)日：2021-06-17

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

公开(公告)号：US20200283893A1

公开(公告)日：2020-09-10

申请号：US16802920

申请日：2020-02-27

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/36 ,  C23C16/455

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20190390338A1

公开(公告)日：2019-12-26

申请号：US16563473

申请日：2019-09-06

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20180094351A1

公开(公告)日：2018-04-05

申请号：US15585540

申请日：2017-05-03

Applicant: ASM IP Holding B.V.

Inventor： Mohith Verghese ,  Eric James Shero ,  Carl Louis White ,  Kyle Fondurulia ,  Herbert Terhorst

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4481 ,  C23C16/45544

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

公开(公告)号：US20160376704A1

公开(公告)日：2016-12-29

申请号：US14752712

申请日：2015-06-26

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/06

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

Abstract translation: 公开了形成包括金属碳化物材料的薄膜结构的方法，以及包括金属碳化物材料的结构和装置。 示例性结构包括使用两种或更多种不同工艺（例如两种或更多种不同的前体）形成的金属碳化物材料，其能够调整各种金属碳化物材料性质，包括电阻率，电流泄漏和功函数。

公开(公告)号：US09228259B2

公开(公告)日：2016-01-05

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/44 ,  C23F1/00 ,  C23F1/08 ,  H01L21/3213

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种处理沉积反应器的方法。 该方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺杂铝的碳化钛膜或掺铝的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US12295163B2

公开(公告)日：2025-05-06

申请号：US17660389

申请日：2022-04-22

Applicant: ASM IP HOLDING B.V.

Inventor： Fu Tang ,  Eric James Shero ,  Gejian Zhao ,  Eric Jen Cheng Liu

IPC: H10D64/01 ,  H01L21/28

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

公开(公告)号：US20250105012A1

公开(公告)日：2025-03-27

申请号：US18896482

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Giueseppe Alessio Verni ,  Petro Deminskyi ,  Balaji Kannan ,  Eric Jen cheng Liu ,  Fu Tang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/28

Abstract: Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.

公开(公告)号：US12247286B2

公开(公告)日：2025-03-11

申请号：US16983364

申请日：2020-08-03

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: F28F7/00 ,  C23C16/455 ,  C23C16/52

Abstract: A cooling apparatus and methods for maintaining a precursor source vessel heater at a desired temperature are disclosed. The apparatus and methods can be used to maintain a desired temperature gradient within the precursor source vessel for improved integrity of the precursor source before delivery of the precursor to a reaction chamber. The apparatus and methods can also be used for rapid cooling of a source vessel for maintenance.