公开(公告)号：US11385553B2

公开(公告)日：2022-07-12

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Nitesh Pandey ,  Olger Victor Zwier ,  Patrick Warnaar ,  Maurits Van Der Schaar ,  Elliott Gerard McNamara ,  Arie Jeffrey Den Boef ,  Paul Christiaan Hinnen ,  Murat Bozkurt ,  Joost Jeroen Ottens ,  Kaustuve Bhattacharyya ,  Michael Kubis

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US11067902B2

公开(公告)日：2021-07-20

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick Warnaar ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US11022892B2

公开(公告)日：2021-06-01

申请号：US16669317

申请日：2019-10-30

Applicant: ASML Netherlands B.V.

Inventor： Patrick Warnaar ,  Simon Philip Spencer Hastings ,  Alberto Da Costa Assafrao ,  Lukasz Jerzy Macht

IPC: G03B27/54 ,  G03F7/20

Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

公开(公告)号：US20200050114A1

公开(公告)日：2020-02-13

申请号：US16655434

申请日：2019-10-17

Applicant: ASML Netherlands B.V.

Inventor： Murat Bozkurt ,  Maurits Van Der Schaar ,  Patrick Warnaar ,  Martin Jacobus Johan Jak ,  Mohammadreza Hajiahmadi ,  Grzegorz Grzela ,  Lukasz Jerzy Macht

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956 ,  G01N21/47

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：US20200033741A1

公开(公告)日：2020-01-30

申请号：US16593132

申请日：2019-10-04

Applicant: ASML Netherlands B.V

Inventor： Maurits Van Der Schaar ,  Murat Bozkurt ,  Patrick Warnaar ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F9/00 ,  G03F7/20 ,  G01N21/956

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

公开(公告)号：US10466594B2

公开(公告)日：2019-11-05

申请号：US15438364

申请日：2017-02-21

Applicant: ASML Netherlands B.V.

Inventor： Patrick Warnaar ,  Simon Philip Spencer Hastings ,  Alberto Da Costa Assafrao ,  Lukasz Jerzy Macht

IPC: G03B27/54 ,  G03F7/20

Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

公开(公告)号：US20190107781A1

公开(公告)日：2019-04-11

申请号：US16150879

申请日：2018-10-03

Applicant: Stichting VU ,  Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  Universiteit van Amsterdam ,  ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey Den Boef ,  Armand Eugene Albert Koolen ,  Nitesh Pandey ,  Vasco Tomas Tenner ,  Willem Marie Julia Marcel Coene ,  Patrick Warnaar

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01N21/95

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US12197136B2

公开(公告)日：2025-01-14

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：US12066764B2

公开(公告)日：2024-08-20

申请号：US18143825

申请日：2023-05-05

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Patrick Warnaar ,  Vasco Tomas Tenner ,  Maurits Van Der Schaar

IPC: G03F7/00 ,  G01R31/265

CPC classification number: G03F7/706839 ,  G01R31/2656 ,  G03F7/70633

Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

公开(公告)号：US12019377B2

公开(公告)日：2024-06-25

申请号：US17299531

申请日：2019-12-04

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Olger Victor Zwier ,  Patrick Warnaar

IPC: G03F7/00 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/4788 ,  G03F7/70683

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.