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公开(公告)号：US12013647B2
公开(公告)日：2024-06-18
申请号：US17419648
申请日：2019-12-24
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Marc Johannes Noot , Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Grzegorz Grzela , Timothy Dugan Davis , Olger Victor Zwier , Ralph Timotheus Huijgen , Peter David Engblom , Jan-Willem Gemmink
CPC classification number: G03F7/70633 , G01N21/47 , G06T7/0004 , G01N2021/4735 , G06T2207/30148
Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.
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公开(公告)号：US20210349395A1
公开(公告)日：2021-11-11
申请号：US17379662
申请日：2021-07-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick WARNAAR , Patricius Aloysius Jacobus Tinnemans , Grzegorz Grzela , Everhardus Cornelis Mos , Wim Tjibbo Tel , Marinus Jochemsen , Bart Peter Bert Segers , Frank Staals
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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公开(公告)号：US10310388B2
公开(公告)日：2019-06-04
申请号：US15874972
申请日：2018-01-19
Applicant: ASML Netherlands B.V.
Inventor： Adam Urbanczyk , Hans Van Der Laan , Grzegorz Grzela , Alberto Da Costa Assafrao , Chien-Hung Tseng , Jay Jianhui Chen
IPC: G03F7/20 , G01N21/47 , G06F7/20 , G01N21/956
Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.
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公开(公告)号：US20210325174A1
公开(公告)日：2021-10-21
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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公开(公告)号：US10551750B2
公开(公告)日：2020-02-04
申请号：US16393055
申请日：2019-04-24
Applicant: ASML Netherlands B.V.
Inventor： Adam Jan Urbanczyk , Hans Van Der Laan , Grzegorz Grzela , Alberto Da Costa Assafrao , Chien-Hung Tseng , Jay Jianhui Chen
IPC: G03F7/20 , G01N21/47 , G01N21/956
Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.
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Patent Agency Ranking
公开(公告)号：US10474043B2
公开(公告)日：2019-11-12
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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公开(公告)号：US12112260B2
公开(公告)日：2024-10-08
申请号：US16424811
申请日：2019-05-29
Applicant: ASML Netherlands B.V.
Inventor： Lorenzo Tripodi , Patrick Warnaar , Grzegorz Grzela , Mohammadreza Hajiahmadi , Farzad Farhadzadeh , Patricius Aloysius Jacobus Tinnemans , Scott Anderson Middlebrooks , Adrianus Cornelis Matheus Koopman , Frank Staals , Brennan Peterson , Anton Bernhard Van Oosten
CPC classification number: G06N3/08 , G01B11/02 , G01N21/55 , G06T7/0006 , G06T7/001 , G01B2210/56 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
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公开(公告)号：US11067902B2
公开(公告)日：2021-07-20
申请号：US16635584
申请日：2018-07-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick Warnaar , Patricius Aloysius Jacobus Tinnemans , Grzegorz Grzela , Everhardus Cornelis Mos , Wim Tjibbo Tel , Marinus Jochemsen , Bart Peter Bert Segers , Frank Staals
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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9.发明申请公开(公告)号：US20200050114A1
公开(公告)日：2020-02-13
申请号：US16655434
申请日：2019-10-17
Applicant: ASML Netherlands B.V.
Inventor： Murat Bozkurt , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC: G03F7/20 , G01N21/95 , G01N21/956 , G01N21/47
Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
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10.发明授权公开(公告)号：US11650047B2
公开(公告)日：2023-05-16
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
CPC classification number: G01B11/2536 , G02B27/4233 , G02B27/4272 , G03F7/705 , G03F7/7065 , G03F7/7085 , G03F7/70508 , G03F7/70633 , G03H1/0005 , G03H1/0443 , G03H2001/0445
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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