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公开(公告)号：US11728224B2
公开(公告)日：2023-08-15
申请号：US17371380
申请日：2021-07-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US11378891B2
公开(公告)日：2022-07-05
申请号：US17023474
申请日：2020-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Davit Harutyunyan , Fei Jia , Frank Staals , Fuming Wang , Hugo Thomas Looijestijn , Cornelis Johannes Rijnierse , Maxim Pisarenco , Roy Werkman , Thomas Theeuwes , Tom Van Hemert , Vahid Bastani , Jochem Sebastiaan Wildenberg , Everhardus Cornelis Mos , Erik Johannes Maria Wallerbos
Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.
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Patent Agency Ranking
公开(公告)号：US20220066330A1
公开(公告)日：2022-03-03
申请号：US17497087
申请日：2021-10-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis TSIATMAS , Paul Christiaan Hinnen , Elliott Gerard Mc Namara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US10811323B2
公开(公告)日：2020-10-20
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Maria Isabel De La Fuente Valentin , Koen Van Witteveen , Martijn Maria Zaal , Shu-jin Wang
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US10453758B2
公开(公告)日：2019-10-22
申请号：US15445522
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US20170255736A1
公开(公告)日：2017-09-07
申请号：US15445478
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
IPC: G06F17/50
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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37.发明授权公开(公告)号：US09360770B2
公开(公告)日：2016-06-07
申请号：US14562133
申请日：2014-12-05
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70641 , G03F7/70616 , G03F7/70625 , G03F9/7026
Abstract: A method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from the interfield focus variation information.
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