-
公开(公告)号：US20180149987A1
公开(公告)日：2018-05-31
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Arie Jeffrey DEN BOEF , Alessandro POLO , Patricius Aloysius Jacobus TINNEMANS , Adrianus Johannes Hendrikus SCHELLEKENS , Elahe YEGANEGI DASTGERDI , Willem Marie Julia Marcel COENE , Erik Willem BOGAART , Simon Reinald HUISMAN
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
-
32.发明申请公开(公告)号：US20170315055A1
公开(公告)日：2017-11-02
申请号：US15494056
申请日：2017-04-21
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Simon Gijsbert Josephus MATHIJSSEN , Sander Bas ROOBOL , Nan LIN
CPC classification number: G03F7/70616 , G01N21/47 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/4704 , G01N2021/4735 , G01N2021/8822 , G01N2021/95615 , G01N2201/12 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70683 , G03F9/7003 , H01L22/12
Abstract: A structure of interest (T) is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (19, 274, 908, 1012). A processor (PU) calculates a property such as linewidth (CD) or overlay (OV), for example by simulating (S16) interaction of radiation with a structure and comparing (S17) the simulated interaction with the detected radiation. The method is modified (S14a, S15a, S19a) to take account of changes in the structure which are caused by the inspection radiation. These changes may be for example shrinkage of the material, or changes in its optical characteristics. The changes may be caused by inspection radiation in the current observation or in a previous observation.
-
33.发明申请Inspection Method and Apparatus, Substrates for use Therein and Device Manufacturing Method 有权检验方法和装置，其使用的基板和装置制造方法公开(公告)号：US20160097983A1
公开(公告)日：2016-04-07
申请号：US14892880
申请日：2014-05-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Erik Willem BOGAART , Franciscus Godefridus Casper BIJNEN , Arie Jeffrey DEN BOEF , Simon Gijsbert Josephus MATHIJSSEN
IPC: G03F7/20 , G01N21/956 , G01N21/95
CPC classification number: G03F7/70483 , G01N21/9501 , G01N21/956 , G01N2021/656 , G03F7/70625
Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.
Abstract translation: 衬底具有器件结构和计量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受到量子限制的显着影响。 测量结构（800）包括与装置特征相似的组成和尺寸的装置状结构（800b）和校准结构（800a）。 校准结构类似于组合中的器件特征，但至少在一个维度上不同。 通过使用实施拉曼光谱的检查装置和方法，可以通过比较从器件状结构和校准结构中弹性散射的辐射的光谱特征来测量器件状结构的尺寸。
-
公开(公告)号：US20240168388A1
公开(公告)日：2024-05-23
申请号：US18533109
申请日：2023-12-07
Applicant: ASML Netherlands B.V.
IPC: G03F7/00
CPC classification number: G03F7/70625
Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.
-
公开(公告)号：US20220276180A1
公开(公告)日：2022-09-01
申请号：US17634588
申请日：2020-07-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh PANDEY , Simon Gijsbert Josephus MATHIJSSEN , Kaustuve BHATTACHARYYA , Arie Jeffrey DEN BOEF
Abstract: An illumination and detection apparatus for a metrology tool, and associated method. The apparatus includes an illumination arrangement operable to produce measurement illumination having a plurality of discrete wavelength bands and having a spectrum having no more than a single peak within each wavelength band. The detection arrangement includes a detection beamsplitter to split scattered radiation into a plurality of channels, each channel corresponding to a different one of the wavelength bands; and at least one detector for separate detection of each channel.
-
Patent Agency Ranking
公开(公告)号：US20220075276A1
公开(公告)日：2022-03-10
申请号：US17419648
申请日：2019-12-24
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Marc Johannes NOOT , Kaustuve BHATTACHARYYA , Arie Jeffrey DEN BOEF , Grzegorz GRZELA , Timothy Dugan DAVIS , Olger Victor ZWIER , Ralph Timtheus HUIJGEN , Peter David ENGBLOM , Jan-Willem GEMMINK
Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.
-
公开(公告)号：US20220074875A1
公开(公告)日：2022-03-10
申请号：US17419653
申请日：2019-12-19
Applicant: ASML Netherlands B.V.
Abstract: A method includes receiving an image formed in a metrology apparatus wherein the image comprises at least the resulting effect of at least two diffraction orders, and processing the image wherein the processing comprises at least a filtering step, for example a Fourier filter. The process of applying a filter may be obtained also by placing an aperture in the detection branch of the metrology apparatus.
-
公开(公告)号：US20190101839A1
公开(公告)日：2019-04-04
申请号：US16086367
申请日：2017-03-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Eric Anthony JANDA , Cayetano COBALEDA SÁNCHEZ-FABRÉS , Bernd Peter GEH , Simon Gijsbert Josephus MATHIJSSEN
Abstract: A method including directing, by an optical system, an illumination beam to a surface of a substrate, providing relative motion between the directed illumination beam and the substrate until the directed illumination beam is illuminated on a grating underneath an edge or a notch of the substrate, diffracting, by the grating, at least a portion of the illumination beam, and detecting, by the detector, the diffracted illumination.
-
公开(公告)号：US20190094703A1
公开(公告)日：2019-03-28
申请号：US16135197
申请日：2018-09-19
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan JAK , Simon Gijsbert Josephus MATHIJSSEN , Kaustuve BHATTACHARYYA , Won-Jae JANG , Jinmoo BYUN
IPC: G03F7/20
Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.
-
公开(公告)号：US20190033727A1
公开(公告)日：2019-01-31
申请号：US16026507
申请日：2018-07-03
Applicant: ASML Netherlands B.V.
Inventor： Marc Johannes NOOT , Simon Gijsbert Josephus MATHIJSSEN , Kaustuve BHATTACHARYYA , Jinmoo BYUN , Hyun-Su KIM , Won-Jae JANG , Timothy Dugan DAVIS
IPC: G03F7/20
Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.
-
-
-
-
-
-
-
-
-
Search Results
42
records
(took 0.023 seconds)
