公开(公告)号：US08893067B2

公开(公告)日：2014-11-18

申请号：US13971381

申请日：2013-08-20

Applicant: ASML Netherlands B.V.

Inventor： Jun Ye ,  Yen-Wen Lu ,  Yu Cao ,  Luoqi Chen ,  Xun Chen

IPC: G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  G03F1/00 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F1/00 ,  G03F7/004 ,  G03F7/705 ,  G03F7/70666 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06T7/0004 ,  G06T2207/30148 ,  G21K5/00

Abstract: In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract translation: 在一个方面，本发明涉及用于模拟，验证，检查，表征，确定和/或评估光刻设计，技术和/或系统的技术和系统，和/或由其执行的各个功能或使用的组件 其中。 在一个实施例中，本发明是加速光刻特性和/或性质的光刻模拟，检查，表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。

公开(公告)号：US08826198B2

公开(公告)日：2014-09-02

申请号：US13892984

申请日：2013-05-13

Applicant: ASML Netherlands B.V.

Inventor： Min-Chun Tsai ,  Been-Der Chen ,  Yen-Wen Lu

IPC: G06F17/50

CPC classification number: G06F17/50 ,  G03F1/36

Abstract: Model-Based Sub-Resolution Assist Feature (SRAF) generation process and apparatus are disclosed, in which an SRAF guidance map (SGM) is iteratively optimized to finally output an optimized set of SRAFs as a result of enhanced signal strength obtained by iterations involving SRAF polygons and SGM image. SRAFs generated in a prior round of iteration are incorporated in a mask layout to generate a subsequent set of SRAFs. The iterative process is terminated when a set of SRAF accommodates a desired process window or when a predefined process window criterion is satisfied. Various cost functions, representing various lithographic responses, may be predefined for the optimization process.

Abstract translation: 公开了基于模型的子分解辅助特征（SRAF）生成过程和装置，其中SRAF引导图（SGM）被迭代地优化，以最终输出优化的SRAF集合作为通过涉及SRAF的迭代获得的增强的信号强度的结果 多边形和SGM形象。 在前一轮迭代中生成的SRAF被并入到掩模布局中以产生随后的一组SRAF。 当一组SRAF适应期望的过程窗口或者当满足预定义的过程窗口标准时，迭代过程被终止。 代表各种光刻响应的各种成本函数可以为优化过程预定义。

公开(公告)号：US11443083B2

公开(公告)日：2022-09-13

申请号：US16300380

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yi Zou ,  Chenxi Lin ,  Stefan Hunsche ,  Marinus Jochemsen ,  Yen-Wen Lu ,  Lin Lee Cheong

IPC: G06T7/00 ,  G06F30/20 ,  G03F7/20 ,  G06K9/62 ,  G06F30/398 ,  G06N20/00

Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.

公开(公告)号：US20140359543A1

公开(公告)日：2014-12-04

申请号：US14462187

申请日：2014-08-18

Applicant: ASML Netherlands B.V.

Inventor： Jun TAO ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Min-Chun Tsai ,  Dong Mao

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70441

Abstract: Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.

Abstract translation: 这里描述了一种用于获得光刻工艺的优选布局的方法，该方法包括：识别包括多个特征的初始布局; 并重新配置特征直到满足终止条件，从而获得优选布局; 其中所述重新配置包括评估成本函数，所述成本函数测量光刻度量如何受到用于多个平版印刷工艺条件的所述特征的一组变化的影响，以及将所述成本函数扩展成一系列术语，其中至少一些是 特点的特点。

公开(公告)号：US08806389B2

公开(公告)日：2014-08-12

申请号：US13656635

申请日：2012-10-19

Applicant: ASML Netherlands B.V.

Inventor： Taihui Liu ,  Been-Der Chen ,  Yen-Wen Lu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/50

Abstract: Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

Abstract translation: 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。