摘要:
A supporting plate peeling apparatus in accordance with the present invention has removal means for removing an adhesive agent remaining on a side of a wafer from which a supporting plate has been peeled off, which adhesive agent is removed after (i) a supporting plate which supports a wafer reduced in thickness has been peeled off from the wafer and (ii) the side from which the supporting plate has been peeled off is washed with a washing liquid. The supporting plate peeling apparatus in accordance with the present invention is a supporting plate peeling apparatus which can remove the adhesive agent that remains on the side of the wafer from which the supporting plate has been peeled off that could not be completely removed just by the washing liquid, and which allows satisfactory completion of a peeling step. Hence, a supporting plate peeling apparatus is provided, which peels off a supporting plate for supporting a wafer, while not causing the side of the wafer from which the support plate has been peeled off to deteriorate.
摘要:
A method for attaching a substrate such as a semiconductor wafer in which cracking or chipping can be prevented when the substrate is thinned involves applying adhesive liquid onto a circuit (element)-formed surface of a semiconductor wafer. The adhesive liquid undergoes preliminary drying, so that its flowability is reduced and it can keep its shape as an adhesive layer. For the preliminary drying, heating is conducted for 5 minutes at a temperature of 80° C. by using an oven. The thickness of the adhesive layer is determined based on the irregularities of the circuit which has been formed on the surface of the semiconductor wafer. Next, a supporting plate is attached to the semiconductor wafer on which the adhesive layer of a desired thickness has been formed.
摘要:
An adhesive composition which is reduced in gas generation upon heating (has low hygroscopicity), has high alkali resistance, has heat resistance of 200° C. or higher, and can be easily removed with a stripping liquid; and an adhesive film made with the adhesive composition. The adhesive composition is prepared using, at least as a major ingredient, an acrylic polymer produced from (a) styrene, (b) a (meth)acrylic ester monomer containing a cyclic skeleton, and (c) an alkyl (meth)acrylate monomer. The adhesive film has an adhesive composition layer formed from this adhesive composition.
摘要:
An adhesive composition which is reduced in gas generation upon heating (has low hygroscopicity), has high alkali resistance, has heat resistance of 200° C. or higher, and can be easily removed with a stripping liquid; and an adhesive film made with the adhesive composition. The adhesive composition is prepared using, at least as a major ingredient, an acrylic polymer produced from (a) styrene, (b) a (meth)acrylic ester monomer containing a cyclic skeleton, and (c) an alkyl (meth)acrylate monomer. The adhesive film has an adhesive composition layer formed from this adhesive composition.
摘要:
A method for attaching a substrate such as a semiconductor wafer in which cracking or chipping can be prevented when the substrate is thinned involves applying adhesive liquid onto a circuit (element)-formed surface of a semiconductor wafer. The adhesive liquid undergoes preliminary drying, so that its flowability is reduced and it can keep its shape as an adhesive layer. For the preliminary drying, heating is conducted for 5 minutes at a temperature of 80° C. by using an oven. The thickness of the adhesive layer is determined based on the irregularities of the circuit which has been formed on the surface of the semiconductor wafer. Next, a supporting plate is attached to the semiconductor wafer on which the adhesive layer of a desired thickness has been formed.
摘要:
A method of cleaning a support plate according to which, while no waste solution is produced after cleaning the support plate, the support plate can be treated at low cost. The method of cleaning the support plate includes the step of removing an organic substance adhered to the support plate by putting the support plate in contact with oxygen plasma.
摘要:
A support plate for supporting a wafer includes a plurality of through holes piercing the support plate in the thickness direction, and a belt-shaped or island-like flat portion on which the plurality of through holes are not formed.
摘要:
A developing apparatus and method is provided in which the use amount of a developing solution can be reduced without deteriorating the accuracy of development. The developing apparatus comprises a new solution tank for storing an unused developing solution and a used solution tank for storing a used developing solution which is withdrawn from a material to be treated. A new solution feeding nozzle extends from the new solution tank, and the tip end of the nozzle faces toward the upper portion of the cup of each developing unit. A used solution feeding nozzle extends from the used solution tank, and the tip end of the nozzle faces toward the upper portion of the cup of each developing unit.
摘要:
A developing apparatus and method is provided in which the use amount of a developing solution can be reduced without deteriorating the accuracy of development. The developing apparatus comprises a new solution tank for storing an unused developing solution and a used solution tank for storing a used developing solution which is withdrawn from a material to be treated. A new solution feeding nozzle extends from the new solution tank, and the tip end of the nozzle faces toward the upper portion of the cup of each developing unit. A used solution feeding nozzle extends from the used solution tank, and the tip end of the nozzle faces toward the upper portion of the cup of each developing unit.
摘要:
A developing apparatus which enables the time necessary for a development reaction to be shortened and permits uniform development includes a chuck device with a support portion whose top surface is a horizontal surface and a spinner disposed in the middle of this support portion. The support portion and the spinner are provided within an antiscattering cup. A groove which vacuum adsorbs a substrate W to be treated is formed on the top surface of the spinner, a pipe which forms a circulation path is disposed within the groove formed on the top surface of the support portion, and a cleaning nozzle which cleans a developing solution which has flown behind the rear surface of the substrate W is disposed in a position which is nearest to the inside diameter of the top surface of the support portion. On the other hand, in a nozzle device, a spray nozzle is attached to a horizontally reciprocating arm via a columnar support. A developing solution pipe and an air supply pipe are inserted into this spray nozzle and a temperature-regulated developing solution from the developing solution supply pipe is spouted in mist form from the bottom end of the spray nozzle.