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公开(公告)号:US09865772B2
公开(公告)日:2018-01-09
申请号:US15444218
申请日:2017-02-27
Applicant: Apple Inc.
Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号:US20170170360A1
公开(公告)日:2017-06-15
申请号:US15444218
申请日:2017-02-27
Applicant: Apple Inc.
Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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