公开(公告)号：US10229827B2

公开(公告)日：2019-03-12

申请号：US15844989

申请日：2017-12-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Roman Gouk ,  Guan Huei See ,  Yu Gu ,  Arvind Sundarrajan

IPC: H01L21/31 ,  H01L21/02 ,  H01L23/538 ,  H01L21/48 ,  H01L21/311 ,  G03F7/00 ,  H01L21/027

Abstract: Embodiments of the present disclosure generally describe methods of forming one or more device terminal redistribution layers using imprint lithography. The methods disclosed herein enable the formation of high aspect ratio interconnect structures at lower costs than conventional photolithography and etch processes. Further, the processes and methods described herein desirably remove, reduce, and/or substantially eliminate voids in the surrounding polymer layer formed during the polymer deposition process or subsequent thereto.

公开(公告)号：US09660185B2

公开(公告)日：2017-05-23

申请号：US15157120

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Alexander Kontos ,  Adolph Miller Allen ,  Kevin Moraes

IPC: B44C1/22 ,  H01L43/12 ,  G11B5/74 ,  G11B5/855 ,  H01F41/34 ,  H01L21/285 ,  H01L21/308

CPC classification number: H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

公开(公告)号：US09646642B2

公开(公告)日：2017-05-09

申请号：US14170009

申请日：2014-01-31

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC: G11B5/66 ,  G11B5/74 ,  G11B5/855 ,  G11B5/85

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.