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公开(公告)号：US11384429B2
公开(公告)日：2022-07-12
申请号：US15598687
申请日：2017-05-18
Applicant: Applied Materials, Inc.
Inventor： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
IPC: C23C16/16 , H01L21/324 , H01L21/768 , C23C16/02 , C23C16/18 , H01L21/02 , H01L21/285 , C23C16/455 , C23C16/50
Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.
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公开(公告)号：US09660185B2
公开(公告)日：2017-05-23
申请号：US15157120
申请日：2016-05-17
Applicant: Applied Materials, Inc.
Inventor： Roman Gouk , Steven Verhaverbeke , Alexander Kontos , Adolph Miller Allen , Kevin Moraes
IPC: B44C1/22 , H01L43/12 , G11B5/74 , G11B5/855 , H01F41/34 , H01L21/285 , H01L21/308
CPC classification number: H01L43/12 , G11B5/746 , G11B5/855 , G11C11/16 , H01F41/34 , H01L21/2855 , H01L21/3081
Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.
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3.发明申请公开(公告)号：US20140268081A1
公开(公告)日：2014-09-18
申请号：US14139371
申请日：2013-12-23
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Kevin Moraes
CPC classification number: G03F1/22 , C23C14/16 , C23C14/165 , C23C14/221 , C23C14/35 , C23C14/352 , C23C14/541 , G03F7/70958
Abstract: An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.
Abstract translation: 集成的极紫外线空白生产系统包括：用于将基板放置在真空中的真空室; 用于沉积多层堆叠而不从真空去除衬底的沉积系统; 以及用于处理作为非晶金属层沉积的多层叠层上的层的处理系统。 用于制造极紫外线掩模坯料的物理气相沉积室包括：靶，其包含与硼合金的钼。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于放置具有非晶金属层的多层叠层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。 极紫外线空白包括：基材; 具有非晶金属层的多层叠层; 并在多层堆叠上覆盖层。
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公开(公告)号：US11631813B2
公开(公告)日：2023-04-18
申请号：US16806511
申请日：2020-03-02
Applicant: Applied Materials, Inc.
Inventor： Kevin Moraes , Alexander N. Lerner
Abstract: Generally, examples described herein relate to deposition masks and methods of manufacturing and using such deposition masks. An example includes a method for forming a deposition mask. A mask layer is deposited on a substrate. Mask openings are patterned through the mask layer. A central portion of the substrate is removed to define a substrate opening through a periphery portion of the substrate. The mask layer with the mask openings through the mask layer extending across the substrate opening.
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公开(公告)号：US09612521B2
公开(公告)日：2017-04-04
申请号：US14139371
申请日：2013-12-23
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Kevin Moraes
CPC classification number: G03F1/22 , C23C14/16 , C23C14/165 , C23C14/221 , C23C14/35 , C23C14/352 , C23C14/541 , G03F7/70958
Abstract: An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.
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Patent Agency Ranking
公开(公告)号：US11637004B2
公开(公告)日：2023-04-25
申请号：US16848614
申请日：2020-04-14
Applicant: Applied Materials, Inc.
Inventor： Alexander N. Lerner , Michael P. Karazim , Andrew J. Constant , Jeffrey A. Brodine , Kim Ramkumar Vellore , Kevin Moraes , Roey Shaviv
IPC: H01L21/67 , H01J37/32 , C23C16/04 , H01L21/673 , H01L21/677 , H01L21/68
Abstract: An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.
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公开(公告)号：US11047039B2
公开(公告)日：2021-06-29
申请号：US16232496
申请日：2018-12-26
Applicant: APPLIED MATERIALS, INC.
Inventor： Alexander Lerner , Kim Vellore , Ami Sade , Steven Sansoni , Andrew Constant , Kevin Moraes , Roey Shaviv , Niranjan Kumar , Jeffrey Brodine , Michael Karazim
Abstract: Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.
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公开(公告)号：US09343664B2
公开(公告)日：2016-05-17
申请号：US14677761
申请日：2015-04-02
Applicant: Applied Materials, Inc.
Inventor： Roman Gouk , Steven Verhaverbeke , Alexander Kontos , Adolph Miller Allen , Kevin Moraes
IPC: B44C1/22 , H01L43/12 , H01F41/34 , H01L21/285 , H01L21/308
CPC classification number: H01L43/12 , G11B5/746 , G11B5/855 , G11C11/16 , H01F41/34 , H01L21/2855 , H01L21/3081
Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.
Abstract translation: 描述了在基板上形成具有磁特性图案的磁性层的方法和装置。 该方法包括使用金属氮化物硬掩模层通过等离子体曝光对磁性层进行图案化。 使用具有氧化硅图案负材料的纳米压印图案化工艺对金属氮化物层进行构图。 在使用含卤素和含氧远距离等离子体的金属氮化物中形成图案，并且在使用苛性湿法剥离法等离子体暴露后除去。 所有加工都是在低温下进行，以避免热损坏磁性材料。
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公开(公告)号：US11538706B2
公开(公告)日：2022-12-27
申请号：US16848645
申请日：2020-04-14
Applicant: Applied Materials, Inc.
Inventor： Alexander N. Lerner , Michael P. Karazim , Andrew J. Constant , Jeffrey A. Brodine , Kim Ramkumar Vellore , Kevin Moraes , Roey Shaviv
IPC: H01L21/68 , H01J37/32 , H01L21/673 , H01L21/677 , C23C16/04
Abstract: An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.
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10.发明授权公开(公告)号：US10109520B2
公开(公告)日：2018-10-23
申请号：US15285011
申请日：2016-10-04
Applicant: APPLIED MATERIALS, INC.
Inventor： Sree Rangasai V. Kesapragada , Kevin Moraes , Srinivas Guggilla , He Ren , Mehul Naik , David Thompson , Weifeng Ye , Yana Cheng , Yong Cao , Xianmin Tang , Paul F. Ma , Deenesh Padhi
IPC: H01L21/768 , H01L21/02
Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.
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