METHODS OF THINNING SILICON ON EPOXY MOLD COMPOUND FOR RADIO FREQUENCY (RF) APPLICATIONS

    公开(公告)号:US20210090905A1

    公开(公告)日:2021-03-25

    申请号:US16579723

    申请日:2019-09-23

    Abstract: Embodiments of methods for processing a semiconductor substrate are described herein. In some embodiments, a method of processing a semiconductor substrate includes removing material from a backside of a reconstituted substrate having a plurality of dies to expose at least one die of the plurality of dies; etching the backside of the reconstituted substrate to remove material from the exposed at least one die; and depositing a first layer of material on the backside of the reconstituted substrate and the exposed at least one die.

    Method of reconstituted substrate formation for advanced packaging applications

    公开(公告)号:US10211072B2

    公开(公告)日:2019-02-19

    申请号:US15840900

    申请日:2017-12-13

    Abstract: Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the methods disclosed herein include depositing a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and the carrier substrate they are positioned on, before forming a reconstituted substrate with an epoxy molding compound. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.

    Method and apparatus for wafer level packaging

    公开(公告)号:US10276424B2

    公开(公告)日:2019-04-30

    申请号:US15638798

    申请日:2017-06-30

    Abstract: Methods and apparatus for wafer level packaging are described herein. According to one embodiment, a method comprises depositing an adhesive layer atop a carrier, placing at least a portion of a substrate pre-fabricated with a plurality of die cavities and a plurality of through vias atop the laminate, inserting a die into each of the die cavities, encapsulating the die and the substrate and debonding and removing the laminate and the carrier from the encapsulated die and substrate. Another embodiment provides an apparatus comprising a substrate, a plurality of die cavities formed through the substrate and a plurality of conductive through vias disposed through the substrate and arranged about the perimeter of each die cavity, wherein a top surface of the substrate is exposed for application of an encapsulating layer and a bottom surface of the substrate is exposed for placement on an adhesive layer.

    Methods of thinning silicon on epoxy mold compound for radio frequency (RF) applications

    公开(公告)号:US11355358B2

    公开(公告)日:2022-06-07

    申请号:US16579723

    申请日:2019-09-23

    Abstract: Embodiments of methods for processing a semiconductor substrate are described herein. In some embodiments, a method of processing a semiconductor substrate includes removing material from a backside of a reconstituted substrate having a plurality of dies to expose at least one die of the plurality of dies; etching the backside of the reconstituted substrate to remove material from the exposed at least one die; and depositing a first layer of material on the backside of the reconstituted substrate and the exposed at least one die.

Patent Agency Ranking