Managing thermal budget in annealing of substrates
    31.
    发明授权
    Managing thermal budget in annealing of substrates 有权
    管理基板退火中的热预算

    公开(公告)号:US09114479B2

    公开(公告)日:2015-08-25

    申请号:US14229238

    申请日:2014-03-28

    Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要,预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源,例如激光器,加热灯,白光灯或闪光灯。

    Supplemental energy for low temperature processes

    公开(公告)号:US11981999B2

    公开(公告)日:2024-05-14

    申请号:US17525426

    申请日:2021-11-12

    Abstract: Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

    ANTIFRAGILE SYSTEMS FOR SEMICONDUCTOR PROCESSING EQUIPMENT USING MULTIPLE SPECIAL SENSORS AND ALGORITHMS

    公开(公告)号:US20220084842A1

    公开(公告)日:2022-03-17

    申请号:US17019061

    申请日:2020-09-11

    Abstract: Embodiments disclosed herein include a processing tool and methods of using the processing tool. In an embodiment, the processing tool comprises a chamber, and a cartridge for flowing one or more processing gasses into the chamber from a plurality of gas sources. In an embodiment, the processing tool further comprises a mass flow controller for each of the plurality of gas sources, and a mass flow meter between the gas sources and the cartridge. In an embodiment, the processing tool further comprises a first pressure gauge between the mass flow meter and the cartridge, a second pressure gauge fluidically coupled to the chamber, and an exhaust line coupled to the chamber.

    SEMICONDUCTOR PROCESSING TOOLS WITH IMPROVED PERFORMANCE BY USE OF HYBRID LEARNING MODELS

    公开(公告)号:US20220035979A1

    公开(公告)日:2022-02-03

    申请号:US16944012

    申请日:2020-07-30

    Abstract: Embodiments disclosed herein include a semiconductor manufacturing tool with a hybrid model and methods of using the hybrid model for processing wafers and/or developing process recipes. In an embodiment, a method for developing a semiconductor manufacturing process recipe comprises selecting one or more device outcomes, and querying a hybrid model to obtain a process recipe recommendation suitable for obtaining the device outcomes. In an embodiment, the hybrid process model comprises a statistical model and a physical model. In an embodiment, the method may further comprise executing a design of experiment (DoE) on a set of wafers to validate the process recipe recommended by the hybrid process model.

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