-
公开(公告)号:US09114479B2
公开(公告)日:2015-08-25
申请号:US14229238
申请日:2014-03-28
Applicant: Applied Materials, Inc.
Inventor: Stephen Moffatt , Abhilash J. Mayur , Sundar Ramamurthy , Joseph Ranish , Aaron Hunter
CPC classification number: H01L21/67115 , B23K26/0639 , B23K26/064 , B23K26/08 , B23K26/127 , F27B17/0025 , H01L21/67248
Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.
Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要,预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源,例如激光器,加热灯,白光灯或闪光灯。
-
公开(公告)号:US12186832B2
公开(公告)日:2025-01-07
申请号:US17203239
申请日:2021-03-16
Applicant: Applied Materials, Inc.
Inventor: Stephen Moffatt , Joseph M. Ranish
IPC: B23K26/352 , B23K26/00 , B23K26/0622 , B23K26/08 , B23K26/12 , B23K26/354 , B23K103/00 , F27B5/18 , F27D19/00 , F27D21/00 , H01L21/225 , H01L21/268 , H01L21/324 , H01L21/67 , F27B5/14
Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.
-
公开(公告)号:US11981999B2
公开(公告)日:2024-05-14
申请号:US17525426
申请日:2021-11-12
Applicant: Applied Materials, Inc.
Inventor: David K. Carlson , Stephen Moffatt
IPC: C23C16/48 , C23C14/34 , C23C14/54 , C23C16/52 , H01L21/268
CPC classification number: C23C16/482 , C23C14/3435 , C23C14/541 , C23C16/52 , H01L21/2686
Abstract: Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.
-
公开(公告)号:US20230178346A1
公开(公告)日:2023-06-08
申请号:US17545618
申请日:2021-12-08
Applicant: Applied Materials, Inc.
Inventor: Stephen Moffatt , Martin Hilkene
CPC classification number: H01J37/32963 , H01L21/67253 , H01J37/32926 , G06F30/20 , H01L22/10
Abstract: In an embodiment, a plasma processing tool with an extendable probe is described. In an embodiment, the plasma processing tool comprises a chamber, and a pedestal for supporting a substrate. In an embodiment, an edge ring is around a perimeter of the pedestal. Additionally, a sensor at an end of a probe is provided. In an embodiment, the probe is configured to extend over the pedestal.
-
35.
公开(公告)号:US20230153503A1
公开(公告)日:2023-05-18
申请号:US18099130
申请日:2023-01-19
Applicant: Applied Materials, Inc.
Inventor: Stephen Moffatt , SHELDON R. NORMAND , DERMOT P. CANTWELL
IPC: G06F30/367 , H01L21/66 , G06F30/398
CPC classification number: G06F30/367 , H01L22/20 , G06F30/398
Abstract: Embodiments disclosed herein include a semiconductor manufacturing tool with a hybrid model and methods of using the hybrid model for processing wafers and/or developing process recipes. In an embodiment, a method for developing a semiconductor manufacturing process recipe comprises selecting one or more device outcomes, and querying a hybrid model to obtain a process recipe recommendation suitable for obtaining the device outcomes. In an embodiment, the hybrid process model comprises a statistical model and a physical model. In an embodiment, the method may further comprise executing a design of experiment (DoE) on a set of wafers to validate the process recipe recommended by the hybrid process model.
-
公开(公告)号:US11529592B2
公开(公告)日:2022-12-20
申请号:US17365791
申请日:2021-07-01
Applicant: Applied Materials, Inc.
Inventor: Vishwas Kumar Pandey , Lara Hawrylchak , Eric Kihara Shono , Kartik Shah , Christopher S. Olsen , Sairaju Tallavarjula , Kailash Pradhan , Rene George , Johanes F. Swenberg , Stephen Moffatt
IPC: C23C16/455 , B01F23/10 , B01J8/22 , H01L21/67 , B01J4/00
Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.
-
37.
公开(公告)号:US20220084842A1
公开(公告)日:2022-03-17
申请号:US17019061
申请日:2020-09-11
Applicant: Applied Materials, Inc.
Inventor: Martin Hilkene , Kartik Shah , Stephen Moffatt
Abstract: Embodiments disclosed herein include a processing tool and methods of using the processing tool. In an embodiment, the processing tool comprises a chamber, and a cartridge for flowing one or more processing gasses into the chamber from a plurality of gas sources. In an embodiment, the processing tool further comprises a mass flow controller for each of the plurality of gas sources, and a mass flow meter between the gas sources and the cartridge. In an embodiment, the processing tool further comprises a first pressure gauge between the mass flow meter and the cartridge, a second pressure gauge fluidically coupled to the chamber, and an exhaust line coupled to the chamber.
-
38.
公开(公告)号:US20220035979A1
公开(公告)日:2022-02-03
申请号:US16944012
申请日:2020-07-30
Applicant: Applied Materials, Inc.
Inventor: Stephen Moffatt , Sheldon R. Normand , Dermot P. Cantwell
IPC: G06F30/367 , G06F30/398 , H01L21/66
Abstract: Embodiments disclosed herein include a semiconductor manufacturing tool with a hybrid model and methods of using the hybrid model for processing wafers and/or developing process recipes. In an embodiment, a method for developing a semiconductor manufacturing process recipe comprises selecting one or more device outcomes, and querying a hybrid model to obtain a process recipe recommendation suitable for obtaining the device outcomes. In an embodiment, the hybrid process model comprises a statistical model and a physical model. In an embodiment, the method may further comprise executing a design of experiment (DoE) on a set of wafers to validate the process recipe recommended by the hybrid process model.
-
公开(公告)号:US11077410B2
公开(公告)日:2021-08-03
申请号:US16116531
申请日:2018-08-29
Applicant: Applied Materials, Inc.
Inventor: Vishwas Kumar Pandey , Lara Hawrylchak , Eric Kihara Shono , Kartik Shah , Christopher S. Olsen , Sairaju Tallavarjula , Kailash Pradhan , Rene George , Johanes F. Swenberg , Stephen Moffatt
IPC: C23C16/455 , B01F3/02 , B01J8/22 , H01L21/67 , B01J4/00
Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.
-
公开(公告)号:US10181409B2
公开(公告)日:2019-01-15
申请号:US14163309
申请日:2014-01-24
Applicant: Applied Materials, Inc.
Inventor: Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
IPC: B23K26/00 , B23K26/04 , H01L21/477 , F27B5/14 , B23K26/354 , B23K26/03 , B23K26/06 , B23K26/08 , B23K26/12 , H01L21/268 , B23K26/0622 , B23K101/40 , B23K103/00 , H01S3/00
Abstract: An optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.
-
-
-
-
-
-
-
-
-